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May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
12 and 11A, 80V. RDS(ON) = 0.16 and 0.20. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design (3 million/in) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C
TC = 25C unless otherwise noted
NDP408A NDP408AE NDB408A NDB408AE 80 80 20 40 12 36 50 0.33
NDP408B NDP408BE NDB408B NDB408BE
Units V V V V
11 33
A A W W/C C C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
(c) 1997 Fairchild Semiconductor Corporation
NDP408.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25C unless otherwise noted)
Conditions VDD = 25 V, ID = 12 A
Type NDP408AE NDP408BE NDB408AE NDB408BE
Min
Typ
Max 40 12
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 A VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 6 A ALL ALL TJ = 125C ALL ALL ALL TJ = 125C NDP408A NDP408AE NDB408A TJ = 125C NDB408AE NDP408B NDP408BE NDB408B TJ = 125C NDB408BE NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 6 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 11 2 1.4 2.9 2.3 0.11 0.19 80 250 1 100 -100 4 3.6 0.16 0.32 0.2 0.5 V A mA nA nA V V A
ON CHARACTERISTICS (Note 2)
VGS = 10 V, ID = 5.5 A
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
10
A
3
5.3 380 115 35 500 125 50
S pF pF pF
Ciss Coss Crss
NDP408.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25C unless otherwise noted)
Conditions VDD = 40 V, ID = 12 A, VGS = 10 V, RGEN = 24
Type ALL ALL ALL ALL
Min
Typ 7.5 48 22 32 12 2.5 6
Max 20 80 40 60 17
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 64 V, ID = 12 A, VGS = 10V
ALL ALL ALL NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 12 A
11
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP408A NDP408AE NDB408A NDB408AE NDP408B NDP408BE NDB408B NDB408BE
36
A
33
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 6 A VGS = 0 V, IS = 12 A, dIS/dt = 100 A/s
ALL TJ = 125C ALL ALL
0.87 0.74 68 4.7
1.3 1.2 100 7
V V ns A
trr Irr RJC RJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 3 62.5 C/W C/W
Notes: 1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP408.SAM
Typical Electrical Characteristics
30 2
V GS = 20V
I D , DRAIN-SOURCE CURRENT (A) 25
12 8.0
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
10
V GS = 6V
1.8 1.6 1.4 1.2 1 0.8 0.6
7.0 8.0 10 12 20
20
7.0
15
10
6.0
5
5.0
0
0
2
4
6
8
0
5
VDS , DRAIN-SOURCE VOLTAGE (V)
10 15 20 I D , DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2.5
2.5
V
DRAIN-SOURCE ON-RESISTANCE 2
V GS = 10V
R DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 6A
TJ = 125C
2
GS
= 10V
R DS(ON) , NORMALIZED
1.5
1.5
1
25C
1
0.5
-55C
0 -50
-25
0
25 50 75 100 125 T , JUNCTION TEMPERATURE (C)
J
150
175
0.5 0 5 10 15 20 I D , DRAIN CURRENT (A) 25 30
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
10 GATE-SOURCE THRESHOLD VOLTAGE (V)
1.2
V DS = 10V
8 I D , DRAIN CURRENT (A)
T = -55C J
25 125
Vth , NORMALIZED
V DS = V
1.1
GS
I D = 250A
1
6
0.9
4
0.8
2
0.7
0 2 3 V
GS
4
5
6
7
0.6 -50
-25
0
, GATE TO SOURCE VOLTAGE (V)
25 50 75 100 125 TJ , JUNCTION TEMPERATURE (C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDP408.SAM
Typical Electrical Characteristics (continued)
1.15 UDRAIN-SOURCE BREAKDOWN VOLTAGE (V)
30
I D = 250A
1.1
VGS = 0V TJ = 125C 25C -55C
I S , REVERSE DRAIN CURRENT (A)
-25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (C) 150 175
10 5 2 1 0.5
BV DSS , NORMALIZED
1.05
1
0.1
0.95
0.9 -50
0.01 0.4
0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
20 V GS , GATE-SOURCE VOLTAGE (V)
1000 500
C iss
I D = 12A
15
V DS = 12V 64 24
CAPACITANCE (pF)
200 100 50
C oss
10
C rss f = 1 MHz V GS = 0 V
5
10 0.1
0.2 V
0.5
DS
1 2 5 10 20 , DRAIN TO SOURCE VOLTAGE (V)
50
0 0 5 10 15 Q g , GATE CHARGE (nC) 20 25
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
V IN
D
RL V OUT
DUT
Output, Vout
10%
10% 90%
VGS
R GEN
Inverted
G
Input, Vin
10%
50%
50%
S
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP408.SAM
Typical Electrical Characteristics (continued)
8 g FS TRANSCONDUCTANCE (SIEMENS) ,
T J = -55C
6
VGS = 10V
125C
L tp
+ VDD -
25C
4
t p is adjusted to reach the desired peak inductive current, I L . tp IL
10
BV DSS
2
VDS = 10V
0 0 2 I
D
VDD
4 6 , DRAIN CURRENT (A)
8
Figure 13. Transconductance Variation with Drain Current and Temperature.
Figure 14. Unclamped Inductive Load Circuit and Waveforms.
50
20 ID , DRAIN CURRENT (A) 10 5
RD
O S(
N)
Lim
it
10
10
s
0
s
1m
10 ms
s
2 1 0.5
V
GS
= 20V
DC
SINGLE PULSE T C = 25C
1
2
3 V
DS
5 10 20 , DRAIN-SOURCE VOLTAGE (V)
80
150
Figure 15. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3
0.2 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
R JC (t) = r(t) * RJC R = 3.0 C/W JC
0.1
0.05 P(pk)
0.05 0.03 0.02
0.02 0.01 Single Pulse
t1
t2
TJ - T C = P * R JC (t) Duty Cycle, D = t1 /t2 0.05 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000
0.01 0.01
0.02
Figure 16. Transient Thermal Response Curve.
NDP408.SAM

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