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| Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Low thermal resistance BYQ60EW series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF 0.85 V IO(AV) = 60 A IRRM 0.2 A trr 35 ns a1 1 k2 a2 3 GENERAL DESCRIPTION Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ60EW series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode SOT429 (TO247) 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage square wave = 0.5; Tmb 82 C t = 25 s; = 0.5; Tmb 82 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYQ60EW -40 MIN. -150 150 150 150 60 60 380 414 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A C C IRRM IRSM Tstg Tj ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 8 UNIT kV December 1998 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air MIN. - BYQ60EW series TYP. 45 MAX. 0.85 0.6 - UNIT K/W K/W K/W ELECTRICAL CHARACTERISTICS characteristics arre per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Forward recovery voltage CONDITIONS IF = 30 A; Tj = 150C IF = 30 A IF = 60 A VR = VRWM VR = VRWM; Tj = 100 C IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 0.73 0.95 1.07 10 1 10 27 0.7 MAX. 0.85 1.1 1.2 200 2 20 35 UNIT V V V A mA nC ns V December 1998 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ60EW series I dI F dt F 35 30 Forward dissipation, PF (W) BYQ60EW Tmb(max) (C) 120.25 1.9 124.5 2.2 a = 1.57 128.75 133 137.25 141.5 145.75 150 t rr time 25 4 20 15 10 2.8 Q I R I s 10% 100% 5 0 rrm 0 5 10 15 20 25 Average forward current, IF(AV) (A) 30 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV))per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). I F 1000 trr / ns BYQ60EW IF = 1 A time 100 VF V VF time fr 10 1 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Typical trr at Tj = 25 C. Forward dissipation, PF (W) 45 40 35 30 25 20 15 10 5 0 0 0.1 0.2 BYQ60EW 0.5 Tmb(max) (C) 111.75 D = 1.0 116 120.25 124.5 128.75 tp D = tp/T 10 Irrm / A BYQ60EW 1 IF = 1 A 133 137.25 141.5 145.75 150 50 0.1 T 10 20 30 40 Average forward current, IF(AV) (A) 0.01 1 10 -dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D. Fig.6. Typical Irrm at Tj = 25 C. December 1998 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ60EW series Forward Current, IF (A) 60 55 50 45 40 35 30 25 20 15 10 5 0 0 Tj = 150 C Tj = 25 C typ BYQ60EW max 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage, VF (V) 1 1.1 1.2 1.3 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Qs / nC 100 BYQ60EW IF=5A 10 IF=1A IF=2A 1 1 10 -dIF/dt (A/us) 100 Fig.8. Typical Qs at Tj = 25 C. Transient Thermal Impedance, Zth j-mb (K/W) 1 Single pulse 0.1 BYQ60EW P D 0.01 tp t 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Fig.9. Transient thermal impedance; Zth j-hs = f(tp). December 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max BYQ60EW series 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.10. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". December 1998 5 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYQ60EW series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 6 Rev 1.000 |
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