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| TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications * * * * * * * Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R DS (ON) = 3.7 mO (typ.) High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 A (max) (V DS = 30 V) Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD Rating 30 30 20 15 60 1.9 W Unit V V V A JEDEC JEITA TOSHIBA ? ? 2-6J1B Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) PD EA S IAR EAR Tch Tstg 1.0 W Circuit Configuration 146 15 0.19 150 -55 to 150 mJ 8 7 6 5 A mJ C C 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-07-14 TPC8016-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W Thermal resistance, channel to ambient (Note 2b) Rth (ch-a) 125 C/W Marking (Note 5) TPC8016 H *| Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, R G = 25 , IAR = 15 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * on lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-07-14 TPC8016-H Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW V DD 24 V, V GS = 10 V , ID = 15 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX V th RDS (ON) |Yf s | Ciss Crss Coss tr ton 10 V V GS 0V 4.7 ID = 7.5 A V OUT RL = 2 V DS = 10 V , V GS = 0 V , f = 1 MHz Test Condition V GS = 16 V, V DS = 0 V V DS = 30 V, V GS = 0 V ID = 10 mA, V GS = 0 V ID = 10 mA, V GS = -20 V V DS = 10 V, ID = 1 mA V GS = 4.5 V , ID = 7.5 A V GS = 10 V , ID = 7.5 A V DS = 10 V , ID = 7.5 A Min 30 15 1.1 12.5 Typ. 5.5 3.7 25 2380 410 980 9.8 21 15 60 46 26 7.2 12.2 15.6 Max 10 10 2.3 7.5 5.7 ns nC pF S Unit A A V V m V DD 15 V - < 1%, tw = 10 s Duty = V DD 24 V, V GS = 10 V , ID = 15 A - V DD 24 V, V GS = 5 V , ID = 15 A - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP V DSF Test Condition IDR = 15 A, V GS = 0 V Min Typ. Max 60 -1.2 Unit A V 3 2003-07-14 TPC8016-H ID - V DS 10 4.5 8 10 3.5 3.2 3.15 Common source Ta = 25C, pulse test ID - V DS 20 4.5 3.5 16 10 3.2 12 3.1 8 3.0 4 2.9 3.3 Common source Ta = 25C, pulse test 3.1 (A) 3.05 6 3.0 4 2.9 2 Drain current 2.8 VGS = 2.7 V 0.2 0.4 0.6 0.8 1.0 Drain current D I I D (A) VGS = 2.8 V 0 0 0.4 0.8 1.2 1.6 2.0 0 0 Drain-source voltage V DS (V) Drain-source voltage V DS (V) ID - V GS 50 Common source VDS = 10 V Pulse test 40 1 V DS - V GS Common source Ta = 25C Pulse test V DS (V) Drain-source voltage 25 0.8 Drain current D I (A) 30 0.6 20 0.4 ID = 15 A 0.2 3.8 7.5 10 100 Ta = -55C 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 Gate-source voltage V GS (V) Gate-source voltage V GS (V) |Yf s | - ID (S) 100 100 RDS (ON) - ID Common source Ta = 25C Pulse test Yfs Ta = -55C 10 100 25 Forward transfer admittance Drain-source ON resistance R DS (ON) (m) 10 VGS = 4.5 V 10 1 Common source VDS = 10 V Pulse test 0.1 0.1 1 10 30 1 0.1 1 10 100 Drain current D I (A) Drain current D I (A) 4 2003-07-14 TPC8016-H RDS (ON) - Ta 12 100 5 IDR - V DS Drain-source ON resistance R DS (ON) (m) 10 (A) 10 Drain reverse current DR I 8 ID = 15, 7.5, 3.8 A 10 3 VGS = 0 V 1 6 VGS = 4.5 V ID = 15, 7.5, 3.8 A 10 4 1 2 Common source Pulse test 0 -80 -40 0 40 80 120 160 Common source Ta = 25C Pulse test 0.1 0 -0.2 -0.4 -0.6 -0.8 -1 Ambient temperature Ta ( C) Drain-source voltage V DS (V) Capacitance - V DS 10000 2.5 V th - Ta Gate threshold voltage V th (V) 100 Ciss 2 (pF) 1000 Coss Crss 1.5 Capacitance C 1 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 Common source 0.5 V DS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160 Drain-source voltage V DS (V) Ambient temperature Ta ( C) PD - Ta 2 (1) 40 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b ) Dynamic input/output characteristics Common source Ta = 25C ID = 15 A Pulse test VDD = 24 V 12 20 VDS 12 10 6 2 VGS 6 4 6 10 VDD = 24 V 8 16 14 12 (W) V DS (V) 1.6 Drain power dissipation P D 30 (2) 0.8 0.4 0 0 50 100 150 200 0 0 10 20 30 40 50 0 60 Ambient temperature Ta ( C) Total gate charge Q g (nC) 5 2003-07-14 Gate-source voltage 1.2 Drain-source voltage t = 10 s V GS (V) TPC8016-H r th - tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b) Normalized transient thermal impedance r th (C/W) (2) (2) t = 10 s 100 (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 ID max (plused) * 1 ms* 10 Drain current D I (A) 10 ms* 1 0.1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 100 0.01 0.01 Drain-source voltage V DS (V) 6 2003-07-14 TPC8016-H RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the mos t recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own ris k. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2003-07-14 |
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