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| SOT23 NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR ISSUE 3 DECEMBER 1995 COMPLIMENTARY TYPE PARTMARKING DETAIL 7 FMMT597 497 FMMT497 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 100 80 20 75 5 SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MIN. MAX. VALUE 300 300 5 500 1 200 500 -55 to +150 UNIT V V V 100 100 100 0.2 0.3 1.0 1.0 300 MHz pF nA nA nA V V V V SOT23 UNIT V V V mA A mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage 300 300 5 CONDITIONS. IC=100A IC=10mA* IE=100A VCB=250V VCES=250V VEB=4V IC=100mA, IB=10mA IC=250mA, IB=25mA IC=250mA, IB=25mA IC=250mA, VCE=10V IC=1mA, VCE=10V IC=100mA, VCE=10V* IC=250mA, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 125 FMMT497 TYPICAL CHARACTERISTICS 0.6 0.5 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A I+/I*=10 I+/I*=50 +25 C 0.6 0.5 0.4 0.3 0.2 0.1 0 I+/I*=10 -55 C +25 C +100 C 1mA 10mA 100mA 1A IC-Collector Current IC-Collector Current VCE(sat) v IC 400 VCE(sat) v IC V+-=10V +100 C 0.9 0.8 0.6 0.4 I+/I*=10 300 200 +25 C 100 -55 C -55 C +25 C +100 C 0.2 0 0 1mA 10mA 100mA 1A 1mA 10mA 100mA 1A IC-Collector Current IC-Collector Current hFE V IC 1 VBE(sat) v IC 0.9 0.8 0.6 0.4 0.2 0 V+-=10V 0.1 DC 1s 100ms 10ms 1ms 100s -55 C +25 C +100 C 0.01 1mA 10mA 100mA 1A 0.001 0.1 1 10 100 1000 IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 126 |
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