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PROVISIONAL
IRGS14B40L
14A, Voltage Clamped 400V IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Co l l ect o r
G at e
Rg
Rg e
Em it te r
D 2 P ak
MIN TYP MAX 400 430 30 2.2 18 14 -10 -40 10 175 UNITS V V V A A V C CONDITIONS RG =1 kOhm , Ic =7A Ic = -10mA, 25 C Ic = 1 mA VGE = 5V, 25 C VGE = 5V, 100 C 370 24
VCL VECAV VGE(TH) I C25 IC100 VGE TJ VESD
COLLECTOR - EMITTER CLAMPING VOLTAGE EMITTER - COLLECTOR AVALANCHE VOLTAGE GATE - EMITTER THRESHOLD VOLTAGE CONTINUOUS COLLECTOR CURRENT CONTINUOUS COLLECTOR CURRENT GATE - EMITTER VOLTAGE OPERATING JUNCTION TEMPERATURE RANGE ELECTROSTATIC VOTAGE FROM EACH PIN TO EACH OF THE OTHER PINS
0.75 1.8
-6 24 14 10
6
kV A A A A A A us
C= 100pF, R = 1.5 kOhms 0.7mH INDUCTANCE, 25 C 2.2mH INDUCTANCE, 25 C 4.7mH INDUCTANCE, 25 C 1.5mH INDUCTANCE, 150 C 4.7mH INDUCTANCE, 150 C 8.7mH INDUCTANCE, 150 C Tc = 150 C
ISCIS25C
SELF CLAMPED INDUCTIVE SWITCHING CURRENT
ISCIS100C
SELF CLAMPED INDUCTIVE SWITCHING CURRENT
13 7.5 5.5
t sc R1 R2 VCE(ON) R qJC RqJA
SHORT CIRCUIT WITHSTAND TIME GATE SERIES RESISTANCE GATE EMITTER RESISTANCE COLLECTOR - EMITTER SATURATION VOLTAGE THERMAL RESISTANCE, JUNCTION TO CASE THERMAL RESISTANCE,JUNCTION TO AMBIENT (PCB MOUNTED, STEADY STATE )
750 75 20 1.55 1.8 1.5
Ohms k Ohms V V
O
Ic= 7A, VGE =5V, 25C Ic = 10A, VGE =5V, 25C
K / WATT
40
O
K / WATT
11-4-98
IRGS14
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage -- -- V DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage -- -- -- V/C VCE(on) Collector-to-Emitter Saturation Voltage -- 1.55 -- -- 1.8 -- V -- -- VGE(th) Gate Threshold Voltage -- DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage -- --- -- mV/C gfe Forward Transconductance --- --- -- S ICES Zero Gate Voltage Collector Current -- -- A -- -- V FM Diode Forward Voltage Drop -- V -- IGES Gate-to-Emitter Leakage Current -- -- nA V(BR)CES Conditions VGE = V, IC = A VGE = V, IC = mA IC = 7A VGE = 5V IC = 10A See Fig. 2, 5 IC = A, TJ = C VCE = VGE, IC = A VCE = VGE, IC = A VCE = V, IC = A VGE = V, VCE = V VGE = V, VCE = V, TJ = C IC = A See Fig. 13 IC = A, TJ = C VGE = V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Qrr di(rec)M/dt Min. Typ. Max. Units Conditions -- -- IC = A -- -- nC VCC = V See Fig.8 -- -- VGE = V -- -- -- -- -- -- TJ = C ns -- -- -- IC = A, VCC = V -- -- -- VGE = V, RG = W -- -- Energy losses include "tail" -- -- mJ See Fig. 9,10,14 -- -- -- -- 750 s VCC = V, TJ = C VGE = V, RG = W , VCPK < V Turn-On Delay Time -- -- -- TJ = C, Rise Time -- -- -- IC = A, VCC = V ns Turn-Off Delay Time -- -- -- VGE = V, RG = W Fall Time -- -- -- Energy losses include "tail" Total Switching Loss -- -- mJ See Fig. 11,14 Internal Emitter Inductance -- -- nH Measured 5mm from package Input Capacitance -- -- VGE = V Output Capacitance -- -- pF VCC = V See Fig. 7 Reverse Transfer Capacitance -- -- = MHz Diode Reverse Recovery Time -- ns TJ = C See Fig. -- TJ = C 14 IF = A Diode Peak Reverse Recovery Current -- A TJ = C See Fig. -- TJ = C 15 VR = V Diode Reverse Recovery Charge -- nC TJ = C See Fig. -- TJ = C 16 di/dt = As Diode Peak Rate of Fall of Recovery -- -- A/s TJ = C See Fig. During tb -- -- TJ = C 17 Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time

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