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PTF 10020 125 Watts, 860-960 MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. * *
* * * *
INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability
Typical Output Power vs. Input Power
150 960 MHz
Output Power (Watts)
125 100 75 860 MHz 50 900 MHz
A-1
100 20
234 569 813
VDD = 28 V
25 0 0 1 2 3 4 5 6 7
IDQ = 1.4 A Total
Input Power (Watts)
Package 20240
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.4 A Total, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W(PEP), IDQ = 1.4 A Total, f = 959.9, 960 MHz--all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. P-1dB h Y 125 50 -- 130 55 -- -- -- 10:1 Watts % --
Symbol
Gps
Min
11.0
Typ
12.5
Max
--
Units
dB
e
1
PTF 10020
Electrical Characteristics
Characteristic Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
e
(100% Tested--characteristics, conditions and limits shown per side)
Min
65 -- 3.0 --
Typ
-- -- 4.3 2.5
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C)
(1)per side
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 20 200 290 1.67 -40 to +150 0.6
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
Broadband Test Fixture Performance
20 Efficiency % 16 60 50 40
Efficiency
Broadband Test Fixture Performance
20 18 16 Efficiency % 60 50 40 - 30 5 -15 20 -25 10 -35 0 960
Gain (dB)
Gain 12
Gain (dB)
14 12 10 8 6 4 925 Gain
Return Loss (dB)
- 30 5 -15 20 -25 10 Return Loss
IDQ = 1.4 A Total
8
IDQ = 1.4 A Total POUT = 125 W
Return Loss
POUT = 125 W
4 860
870
880
890
-35 0 900
930
935
940
945
950
955
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB)
VDD = 28 V
VDD = 28 V
Efficiency
e
Typical Performance
Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
15 14 Output Power (W ) 150 130 110
PTF 10020
Efficiency vs. Output Power
80 70
Efficiency (%)
60 50 40 30 20 10 0 30 50 70 90 110 130
Gain
13 12 11 10 860
Gain (dB)
VDD = 28 V IDQ = 1.4 A Total
Efficiency (%) 90 70
VDD = 28 V IDQ = 1.4 A Total f = 960 MHz
880
900
920
940
50 960
Frequency (MHz)
Output Power (Watts)
Output Power vs. Supply Voltage
150
Intermodulation Distortion vs. Output Power
-10
VDD = 28 V Output Power (Watts)
130 110 90 70 50 20 22 24 26 28 30 32 34 -20
IDQ = 1.4 A Total f1 = 941.9 MHz f2 = 942.0 MHz
3rd order
IDQ = 1.4 A Total f = 960 MHz Pin = 5.4 W
IMD (dBc)
-30 -40
5th -50 7th -60 20 30 40 50 60 70 80 90 100 110 120
VDS, Supply Voltage
Output Power (Watts-PEP)
Power Gain vs. Output Power
15
180 160
Capacitance vs. Voltage (one side)*
VGS = 0 V f = 1 MHz
27 24 21 18 15
Cds and Cgs (pF)
14
120 100 80 60 40 20
Gain (dB)
13
IDQ = 700 mA IDQ = 350 mA
Cds Crss
0 10 20 30 40
12 9 6 3 0
12
11 1 10 100 1000
0
Output Power (W)
Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. 3
Crss (pF)
IDQ = 1.4 A
VDD = 28 V f = 960 MHz
140
Cgs
PTF 10020
Typical Performance
Bias Voltage vs. Temperature
1.04 1.02
0.40
e
Voltage normalized to 1.0 V Series show current (A) Bias Voltage (V)
1.00 0.98 0.96 0.94 -20 30 Temp. (C) 80
1.32 2.25 3.17 4.09 5.02
130
Impedance Data
(VDD = 28 V, IDQ = 1.4 A, POUT = 125 W)
Z Source
D
Z Load
Z0 = 50 W
G G
S
D
Frequency
MHz 835 860 885 910 935 960 985 R
Z Source W
jX -8.9 -9.3 -9.8 -11.8 -12.9 -12.8 -11.0 R 2.3 2.3 2.3 2.2 2.2 2.2 2.2 1.7 1.9 1.9 1.9 2.5 2.2 1.8
Z Load W
jX -1.3 -0.9 -1.0 -1.2 -1.3 -2.1 -2.2
4
e
Typical Scattering Parameters (one side only)
(VDS = 28 V, ID = 4 A)
PTF 10020
f (MHz)
800 810 820 830 840 850 860 870 880 890 900 910 920 930 940 950 960 970 980 990 1000
S11 Mag
0.974 0.974 0.974 0.974 0.972 0.972 0.971 0.969 0.968 0.966 0.964 0.963 0.961 0.958 0.956 0.953 0.95 0.946 0.942 0.937 0.933
S21 Ang
176 175.9 175.7 175.6 175.4 175.4 175.2 175 174.9 174.8 174.7 174.6 174.3 174.2 174.1 174 173.8 173.8 173.7 173.6 173.6
S12 Ang
-10.6 -11.5 -12.7 -13.6 -14.8 -16 -16.9 -18 -19.1 -20.2 -21.4 -23 -24.6 -26.3 -28.2 -30.3 -32.7 -35.4 -38.1 -41 -44
S22 Ang
50.9 49 52.9 53.4 52.6 54.9 56.1 52.5 53.4 56.2 58.1 55.5 57.7 57 56.7 58.7 60.2 60 59.5 62 62.2
Mag
0.657 0.66 0.662 0.666 0.669 0.672 0.674 0.679 0.686 0.695 0.705 0.716 0.729 0.743 0.757 0.774 0.791 0.807 0.821 0.838 0.853
Mag
0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002
Mag
0.97 0.971 0.971 0.972 0.972 0.972 0.972 0.972 0.973 0.975 0.977 0.977 0.976 0.977 0.978 0.979 0.979 0.981 0.982 0.983 0.983
Ang
-172 -172.1 -172.3 -172.4 -172.5 -172.7 -172.8 -172.8 -173 -173.1 -173.2 -173.4 -173.6 -173.6 -173.8 -174 -173.9 -174.1 -174.2 -174.3 -174.4
Test Circuit
Schematic for f = 960 MHz
DUT C1-2 C3 C4 C5 C6-7, C10, C13-14, C18 C8, C11 C9, C12, C15, C19 C16, C17, C20, C21 L1. L2 R1, R2, R4, R5 R3, R6 PTF 10020 15 pF, Capacitor ATC 100 B 0.35-3.5 pF, Variable Capacitor 7.5 pF, Capacitor ATC 100 A 1-9 pF, Variable Capacitor 33 pF, Capacitor ATC 100 B 10 mF, +10 V Electrolytic Capacitor 0.01 mF, Capacitor ATC 100 B 10 mF, +30 V Electrolytic Capacitor 4 Turn, #20 AWG, .120" I.D. 1.0 K, W Resistor 5.1 K, 1/4 W Resistor 5
l1, l20 l2, l19 l3, l18 l4, l17 l5, l6 l7, l10 l8, l9 l11, l12 l13, l14 l15, l16
Circuit Board
50 W, .030 l 20 W, .080 l 32 W, .191 l 25 W, .500 l 25 W, .091 l 7 W, .056 l 13.0 W, .017 l 13.0 W, .017 l 7.0 W, .093 l 10.2 W, .030 l .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
PTF 10020
e
Components Layout (not to scale)
Artwork (1 inch
)
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10020 Uen Rev. A 01-15-00
6

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