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| Composite Transistors XP06214 (XP6214) Silicon NPN epitaxial planar type (0.425) Unit: mm 0.12+0.05 -0.02 For switching/digital circuits Features * Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 0.20.05 6 5 4 1.250.10 2.10.1 1 2 3 (0.65) (0.65) 1.30.1 2.00.1 10 Basic Part Number * UNR2214 (UN2214) x 2 0.90.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 150 150 -55 to +150 Unit V V mA mW C C 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) EIAJ : SC-88 0 to 0.1 Marking Symbol: AA Internal Connection 6 5 4 Tr2 Tr1 Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k 1 2 0.9+0.2 -0.1 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SMini6-G1 Package 3 Min 50 50 Typ Max Unit V V A A mA 0.1 0.5 0.2 80 0.25 4.9 0.2 -30% 0.17 10 0.21 150 +30% 0.25 V V V k MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: June 2003 SJJ00209BED 0.20.1 5 1 XP06214 PT Ta 250 160 Ta = 25C IC VCE Collector-emitter saturation voltage VCE(sat) (V) 100 _ VCE(sat) IC IC / IB = 10 Total power dissipation PT (mW) 200 IB = 1.0 mA Collector current IC (mA) 120 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 10 150 80 0.4 mA 0.3 mA 1 100 Ta = 75C 0.1 -25C 0.01 0.1 1 10 100 25C 40 50 0.2 mA 0.1 mA 0 0 40 80 120 160 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE IC Collector output capacitance C (pF) (Common base, input open circuited) ob 400 VCE = 10 V 6 Cob VCB f = 1 MHz IE = 0 Ta = 25C IO VIN 104 VO = 5 V Ta = 25C Forward current transfer ratio hFE 5 4 Ta = 75C 200 25C -25C 100 Output current IO (A) 1 10 100 300 103 3 102 2 10 1 0 1 10 100 1 000 0 0.1 1 0.4 0.6 0.8 1.0 1.2 1.4 Collector current IC (mA) Collector-base voltage VCB (V) Input voltage VIN (V) VIN IO 100 VO = 0.2 V Ta = 25C Input voltage VIN (V) 10 1 0.1 0.01 0.1 1 10 100 Output current IO (mA) 2 SJJ00209BED |
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