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| SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2798 (F6F35VX2) 350V 6A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The APPLICATION *oe Switching power supply of AC 100V input OUTLINE DIMENSIONS Case : E-pack Case : FTO-220 (Unit : mm) *oe High voltage power supply *oe Inverter RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* DC*j i ID Continuous Drain Current* Peak) i IDP Continuous Source Current* DC*j i IS PT Total Power Dissipation Single Pulse Avalanche Current IAS Tch= 25*Z Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR * i Recommended torque : 0.3Nm *j Ratings -55*150 150 350 *}30 6 18 6 30 6 2 0.5 Unit *Z V A W A kV N* E m Copyright & Copy;2000 Shindengen Electr VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2798 ( F6F35VX2 ) Min. 350 Typ. Max. 250 0.1 1.5 2.5 3.8 0.62 3.0 Unit V A ID = 1mA, VGS = 0V VDS = 350V, VGS = 0V VGS = 30V, VDS = 0V ID = 3A, VDS = 10V ID = 3A, VGS = 10V ID = 1mA, VDS = 10V IS = 3A, VGS = 0V junction to case VDD = 200V, VGS = 10V, ID = 6A VDS = 10V, VGS = 0V, f = 1MHZ ID = 3A, RL = 50, VGS = 10V 20 550 60 155 35 115 S 0.83 3.5 V 1.5 4.17 / nC pF 55 175 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2798 12 Tc = -55C 10 Transfer Characteristics 25C 100C 150C Drain Current ID [A] 8 6 4 2 0 VDS = 15V pulse test TYP 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2798 10 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 1 ID = 3A 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2798 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2798 100 Safe Operating Area 10 100s Drain Current ID [A] 200s 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2798 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2798 10000 Capacitance 1000 Capacitance Ciss Coss Crss [pF] Ciss 100 Coss Crss 10 Tc=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2798 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2798 250 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] VDD = 200V 100V 150 VDS 100 VGS 50V 15 10 5 50 ID = 6A 0 0 10 20 30 40 50 0 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 200 |
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