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| MITSUBISHI RF POWER MODULE M68732L SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 300.2 26.60.2 21.20.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.50.1 1 5 1 2 3 4 4 5 0.45 61 13.71 18.81 23.91 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG3.5V, ZG=ZL=50 f=400-430MHz, ZG=ZL=50 f=400-430MHz, ZG=ZL=50 f=400-430MHz, ZG=ZL=50 Ratings 9.2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted) Symbol f PO T 2fO in Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 400 7 45 Max 430 Unit MHz W % dBc - VDD=7.2V, VGG=3.5V, Pin=50mW ZG=50, VDD=4-19.2V, Load VSWR<4:1 VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97 MITSUBISHI RF POWER MODULE M68732L SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 4 3 2 1 0 390 400 410 in 420 430 T VGG=3.5V, VDD=7.2V, Pin=17dBm PO 75 70 65 60 55 50 45 40 35 30 25 440 4 3 2 1 0 -10 -5 0 5 10 15 40 T;400MHz 30 T;430MHz 20 10 0 20 9 8 7 6 5 VGG=3.5V, VDD=7.2V PO;400MHz PO;430MHz OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 90 80 70 60 50 FREQUENCY f (MHz) INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 10 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 GATE VOLTAGE VGG (V) T;400MHz T;430MHz VDD=7.2V, Pin=17dBm PO;400MHz PO;430MHz 100 90 80 70 60 50 40 30 20 10 0 4 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 OUTPUT POWER, TOTAL EFFICIENCY VS. SUPPLY VOLTAGE VGG=3.5V, Pin=17dBm 90 85 80 PO;400MHz 75 70 PO;430MHz 65 60 55 50 45 T;400MHz 40 35 T;430MHz 30 25 20 5 6 7 8 9 3 4 SUPPLY VOLTAGE VDD (V) Nov. 97 |
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