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MMDT2907A DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * * * * * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 B C D F M Mechanical Data Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K2F Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) K E2 B2 C1 G H 0.65 Nominal H J K L M a J D C2 B1 E1 F L E2 B2 C1 All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMDT2907A -60 -60 -5.0 -600 200 625 -55 to +150 Unit V V V mA mW C/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30109 Rev. 4 - 2 1 of 3 www.diodes.com MMDT2907A Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL Min -60 -60 -5.0 3/4 3/4 3/4 75 100 100 100 50 3/4 3/4 Max 3/4 3/4 3/4 -10 -50 -50 3/4 3/4 3/4 300 3/4 -0.4 -1.6 -1.3 -2.6 8.0 30 3/4 Unit V V V nA mA nA nA Test Condition IC = -10mA, IE = 0 IC = -10mA, IB = 0 IE = -10mA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -10V -10V -10V -10V -10V DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz Cobo Cibo fT 3/4 -- 200 pF pF MHz toff td tr toff (Note 3) 3/4 3/4 3/4 3/4 45 10 40 100 ns ns ns ns VCC = -30V, IC = -150mA, IB1 = -15mA Ordering Information Device MMDT2907A-7 Notes: Packaging SOT-363 Shipping 3000/Tape & Reel 2. Short duration test pulse used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2F YM K2F YM Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30109 Rev. 4 - 2 2 of 3 www.diodes.com MMDT2907A 30 20 C, CAPACITANCE (pF) Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 1 Typical Capacitance VCE COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1 IC = 1mA IC = 10mA IC = 100mA IC = 30mA IC = 300mA 0.01 0.1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region DS30109 Rev. 4 - 2 3 of 3 www.diodes.com MMDT2907A |
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