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Datasheet File OCR Text: |
SMT810 Specifications 1) Product Name 2) Type No. 3) Chip (1) Chip Material (2) Peak Wavelength 4) Package (1) Lead Frame Die (2) Package Resin (3) Lens High Performance Infrared TOP IR LED SMT810 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 10mW typical of output power. It emits a spectral band of radiation at 810nm. Outer dimensionUnit:mm TOP IR LED SMT810 AlGaAs 810 . Silver Plated PPA Resin Epoxy Resin Absolute Maximum Rating Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 190 mW Ta=25C Forward Current IF 100 mA Ta=25C Pulse Forward Current IFP 500 mA Ta=25C Reverse Voltage VR 5 V Ta=25C Operating Temperature TOPR -20 ~ +80 C -30 ~ +80 C Storage Temperature TSTG Soldering Temperature TSOL 240 C Pulse Forward Current condition: Duty=1% and Pulse Width=10us. Soldering condition: Soldering condition must be completed within 3 seconds at 230C Electro-Optical Characteristics [Ta=25C] Item Symbol Condition Minimum Forward Voltage VF IF=50mA Reverse Current IR VR=5V Total Radiated Power PO IF=50mA 5.0 Radiant Intensity IE IF=50mA 3.0 Peak Wavelength IF=50mA P Half Width IF=50mA Viewing Half Angle IF=50mA 1/2 Rise Time tr F=50mA Fall Time tf F=50mA Total Radiated Power is measured by Photodyne #500 Radiant Intensity is measured by Tektronix J-6512. Typical 1.60 10.0 6.0 810 40 55 60 40 Maximum 1.80 10 Unit V uA mW mW/sr nm nm deg. ns ns Marubeni America Corporation 3945 Freedom Circle, Suite 1000, Santa Clara, CA 95054 408-330-0650 (Ext. 323), 408-330-0655 (Fax), sales@tech-led.com |
Price & Availability of SMT810
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