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SMT820 Specifications 1) Product Name 2) Type No. 3) Chip (1) Chip Material (2) Peak Wavelength 4) Package (1) Lead Frame Die (2) Package Resin (3) Lens High Performance Infrared TOP IR LED SMT820 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 15mW typical of output power. It emits a spectral band of radiation at 820nm. Outer dimensionUnit:mm TOP IR LED SMT820 AlGaAs 820 . Silver Plated PPA Resin Epoxy Resin Absolute Maximum Rating Item Power Dissipation Forward Current Pulse Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature Symbol PD IF IFP VR TOPR Maximum Rated Value 190 100 500 5 -20 ~ +80 -30 ~ +80 240 Unit mW mA mA V C C C Ambient Temperature Ta=25C Ta=25C Ta=25C Ta=25C TSTG TSOL Pulse Forward Current condition: Duty=1% and Pulse Width=10us. Soldering condition: Soldering condition must be completed within 3 seconds at 260C Electro-Optical Characteristics [Ta=25C] Item Symbol Condition Minimum Forward Voltage VF IF=50mA Reverse Current IR VR=5V Total Radiated Power PO IF=50mA 8.0 Radiant Intensity IE IF=50mA 3.0 Peak Wavelength IF=50mA P Half Width IF=50mA Viewing Half Angle IF=50mA 1/2 Rise Time tr F=50mA Fall Time tf F=50mA Total Radiated Power is measured by Photodyne #500 Radiant Intensity is measured by Tektronix J-6512. Typical 1.60 15.0 6.0 820 40 55 60 40 Maximum 1.80 10 Unit V uA mW mW/sr nm nm deg. ns ns |
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