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| Datasheet File OCR Text: |
| AT12016-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12016-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. PACKAGE STYLE 21 FEATURES INCLUDE: * High Quality Factor, Q = 300 MIN. CP = .20 pF * Hermetic Pkg, LS = .42 nH * High Tuning Ratio, CT = 9.0 MIN. MAXIMUM RATINGS IF VR PDISS TJ TSTG JC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W NONE O O O O CHARACTERISTICS SYMBOL VR VF IR CT CT Q RS IR = 10 A IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL 120 MAXIM 1.0 100 UNITS V V A pF ----- f = 1.0 MHz f = 1.0 MHz f = 50 MHz f = 2400 MHz 16 9.0 300 18 20 0.9 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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