 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENN7274 FW307 N-Channel and P-Channel Silicon MOSFETs FW307 Ultrahigh-Speed Switching Applications Preliminary Features * Package Dimensions * The FW307 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129 high-speed switching, thereby enabling high-density mounting. 8 Excellent ON-resistance characteristic. [FW307] 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings N-channel 250 30 1 P-channel --250 30 --0.7 --3 1.7 2.0 150 --55 to +150 Unit V V A A W W C C PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) 5 Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Leakage Current V(BR)DSS IDSS IDSS IGSS IGSS ID=1mA, VGS=0 VDS=250V, VGS=0 VDS=15V, VGS=0, Ta=0 to 60C VGS=25V, VDS=0 VGS=15V, VDS=0, Ta=0 to 60C 250 100 4 10 1.2 V A A A A Symbol Conditions Ratings min typ max Unit Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM 83002 TS IM TA-1265 No.7274-1/5 FW307 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage V(BR)DSS IDSS IDSS IGSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=--1mA, VGS=0 VDS=--250V, VGS=0 VDS=15V, VGS=0, Ta=0 to 60C VGS=25V, VDS=0 VGS=15V, VDS=0, Ta=0 to 60C VDS=--10V, ID=--1mA VDS=--10V, ID=-0.7A ID=--0.7A, VGS=-10V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=--1A, VGS=0 --1.5 0.7 1.1 3 160 45 20 12 15 90 40 -1.0 --1.2 4 -250 --100 --4 10 1.2 --2.5 V A A A A V S pF pF pF ns ns ns ns V Symbol VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD Conditions VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=1A, VGS=0 Ratings min 1.5 1.4 2.1 1.2 160 40 15 10 15 80 30 1.0 1.2 1.6 typ max 2.5 Unit V S pF pF pF ns ns ns ns V Switching Time Test Circuit [N-channel] VIN 10V 0V VIN ID=1A RL=100 VDD=100V [P-channel] VIN 0V --10V VIN ID= --0.7A RL=142 VDD= --100V D PW=10s D.C.1% VOUT PW=10s D.C.1% D VOUT G G FW307 P.G 50 FW307 P.G 50 S S Electrical Connection 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 (Top view) 1 2 3 4 No.7274-2/5 FW307 2.0 1.8 1.6 ID -- VDS 5V 6V 4V [Nch] --2.0 --1.8 --1.6 ID -- VDS --6 V [Pch] --5 V Drain Current, ID -- A Drain Current, ID -- A V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 1.4 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --1 --2 VGS=3V --1 0 V --4V VGS= --3V --3 --4 --5 --6 --7 --8 --9 --10 Drain-to-Source Voltage, VDS -- V 2.0 1.8 1.6 IT04459 ID -- VGS Drain-to-Source Voltage, VDS -- V --2.0 IT04460 [Nch] VDS= --10V --1.8 --1.6 ID -- VGS [Pch] Ta= --25 C --1.5 --2.0 --2.5 VDS=10V Drain Current, ID -- A 1.4 1.2 1.0 Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 5C 25 C --0.4 --0.2 0 3.0 3.5 4.0 0 --0.5 --1.0 Ta --2 5C =75C --0.6 Ta= 7 --25 C 25 C --3.0 --3.5 --4.0 25 --4.5 --5.0 Gate-to-Source Voltage, VGS -- V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 IT04461 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 C IT04462 [Nch] Ta=25C ID=1A RDS(on) -- VGS 75 C [Pch] --18 --20 IT04464 Static Drain-to-Source On-State Resistance, RDS(on) -- 18 20 Static Drain-to-Source On-State Resistance, RDS(on) -- Ta=25C ID= --0.7A 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V 3.0 IT04463 RDS(on) -- Ta Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 --60 [Nch] ID=1A VGS=10V RDS(on) -- Ta [Pch] ID= --0.7A VGS= --10V Static Drain-to-Source On-State Resistance, RDS(on) -- 2.5 2.0 1.5 1.0 0.5 0 --60 --40 --20 0 20 40 60 80 100 120 140 Static Drain-to-Source On-State Resistance, RDS(on) -- --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT04465 Ambient Temperature, Ta -- C IT04466 No.7274-3/5 FW307 5 yfs -- ID Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, yfs -- S [Nch] VDS=10V 3 2 yfs -- ID 25C [Pch] VDS= --10V 3 2 1.0 7 5 3 2 25 C 1.0 7 5 C --25 Ta= 75C C -25 =Ta C 75 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.4 2 1.0 IT04467 0.1 --0.1 2 3 5 7 --1.0 2 3 IF -- VSD Drain Current, ID -- A 3 2 --1.0 IT04468 [Nch] VGS=0 IF -- VSD [Pch] VGS = 0 Forward Current, IF -- A Forward Current, IF -- A 7 5 3 2 Ta =7 5C 25 C --25 C 5C 25C 7 5 3 2 0.5 0.6 0.7 0.8 0.9 1.0 IT04469 --0.01 --0.4 Ta= 7 --0.6 --25 --0.8 --0.1 C --1.0 --1.2 IT04470 Diode Forward Voltage, VSD -- V 3 2 Diode Forward Voltage, VSD -- V 3 2 SW Time -- ID [Nch] VDD=100V VGS=10V Switching Time, SW Time -- ns SW Time -- ID td(off) [Pch] VDD= --100V VGS= --10V Switching Time, SW Time -- ns 100 7 5 3 2 td(off) 100 7 5 3 2 tf tf td(on) 10 7 5 3 2 1.0 --0.1 tr 10 7 5 3 0.1 tr td(on) 2 3 5 7 1.0 2 3 2 3 5 7 1000 7 5 Ciss, Coss, Crss -- VDS Drain Current, ID -- A IT04471 [Nch] f=1MHz 1000 7 5 Ciss, Coss, Crss -- VDS Drain Current, ID -- A --1.0 IT04472 [Pch] f=1MHz Ciss, Coss, Crss -- pF 2 Ciss, Coss, Crss -- pF 3 3 2 Ciss Ciss 100 7 5 3 2 100 7 5 3 2 Coss Coss Crss Crs s 10 0 5 10 15 20 25 30 IT04473 10 0 --5 --10 --15 --20 --25 --30 IT04474 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V No.7274-4/5 FW307 10 7 5 3 2 ASO IDP=5A ID=1A Drain Current, ID -- A 10 DC op era Drain Current, ID -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 10 [Nch] 10s 10 0 s 1m s --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --3A ID= --0.7A [Pch] 10s 10 0 1m s 10 s ms ms 0m n s DC 10 op era 0m n s tio tio Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (1200mm2!0.8mm)1unit 23 5 7 1.0 23 5 7 10 23 5 7 100 23 5 Operation in this area is limited by RDS(on). --0.01 7 5 3 2 0.001 0.1 --0.001 --0.1 Ta=25C Single pulse Mounted on a ceramic board (1200mm2!0.8mm)1unit 23 5 7--1.0 23 5 7 --10 23 5 7--100 23 5 Mounted on a ceramic board (1200mm2!0.8mm) Allowable Power Dissipation (FET1), PD -- W 2.5 Drain-to-Source Voltage, VDS -- V IT04475 PD -- Ta [Nch, Pch] 2.0 1.8 1.7 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 PD(FET1) -- PD(FET2) Drain-to-Source Voltage, VDS -- V IT04476 [Nch, Pch] Mounted on a ceramic board (1200mm2!0.8mm) Allowable Power Dissipation, PD -- W 2.0 1.7 1.5 To ta 1u lD iss ipa 1.0 nit tio n 0.5 0 0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ambient Temperature, Ta -- C IT04477 Allowable Power Dissipation (FET2), PD -- W IT04478 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.7274-5/5 |
Price & Availability of FW307
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |