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| KA5H0265R SPS The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turnoff driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. TO -22 0F -4L SPS 1. GND 2. Drain 3. Vcc 4. FB FEATURES * * * * * * * * Precision fixed operating frequency (100kHz) Pulse by pulse current limiting Over current protection Over voltage protection (Min. 25V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Auto-restart mode ORDERING INFORMATION Device KA5H0265R Package TO-220F-4L Topr (C) -25C to +85C BLOCK DIAGRAM DRAIN uA THERMAL S/D 7.5V ! REV. B 1999 Fairchild Semiconductor Corporation KA5H0265R ABSOLUTE MAXIMUM RATINGS Characteristic Drain-source (GND) voltage (1) Drain-Gate voltage (RGS=1M) Gate-source (GND) voltage Drain current pulsed (4) (2) SPS Symbol VDSS VDGR VGS IDM EAS IAS ID ID VCC VFB PD (wt H/S) Derating TOPR TSTG Value 650 650 30 8.0 68 8 2.0 1.3 30 -0.3 to VSD 42 0.33 -25 to +85 -55 to +150 Unit V V V ADC mJ A ADC ADC V V W W/C C C Single pulsed avalanche energy (3) Avalanche current Continuous drain current (TC=25C) Continuous drain current (TC=100C) Supply voltage Analog input voltage range Total power dissipation Operating temperature Storage temperature NOTES: 1. Tj=25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, starting Tj=25C 4. L=13uH, starting Tj=25C KA5H0265R ELECTRICAL CHARACTERISTICS (SFET part) (Ta=25C unless otherwise specified) Characteristic Drain-source breakdown voltage Zero gate voltage drain current Symbol BVDSS IDSS Test condition VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C Static drain-source on resistance (note) RDS(ON) Forward transconductance (note) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz Min. 650 - - - 1.5 - - - - - - - - - - Typ. - - - 5.0 2.5 550 38 17 20 15 55 25 - 3 12 SPS Max. - 50 200 6.0 - - - - - - - - 35 - - Unit V A A S pF nS nC NOTE: Pulse test: Pulse width 300S, duty cycle 2% KA5H0265R ELECTRICAL CHARACTERISTICS (Control part) (Ta=25C unless otherwise specified) Characteristic REFERENCE SECTION Output voltage (1) Temperature Stability (1)(2) OSCILLATOR SECTION Initial accuracy Frequency change with temperature PWM SECTION Maximum duty cycle FEEDBACK SECTION Feedback source current Shutdown delay current IFB Idelay Ta=25C, 0V SPS Symbol Test condition Min. Typ. Max. Unit Vref Vref/T Ta=25C -25CTa+85C 4.80 - 5.00 0.3 5.20 0.6 V mV/C FOSC F/T Ta=25C -25CTa+85C 90 - 100 5 110 10 kHz % 70 % 1.1 6 mA A OVER CURRENT PROTECTION SECTION Over current protection UVLO SECTION Start threshold voltage Minimum operating voltage TOTAL STANDBY CURRENT SECTION Start current Operating supply current (control part only) SHUTDOWN SECTION Shutdown Feedback voltage Thermal shutdown temperature (Tj) Over voltage protection (1) IL(max) Vth(H) Vth(L) 1.05 1.2 1.35 A 14 8.4 - - 15 9 16 9.6 V V IST IOPR VCC=14V VCC<28 100 7 170 12 mA mA VSD TSD VOVP Vfb>6.5V - VCC>24V 6.9 140 25 7.5 160 27 8.1 - 29 V C V NOTES: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process KA5H0265R LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 12/28/99 0.0m 001 Stock#DSxxxxxxxx 1999 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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