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| Schottky Barrier Diodes (SBD) MA2Q738 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 0.3 0 to 0.05 * Forward current (average) IF(AV): 1.5 A type * Reverse voltage (DC value) VR: 40 V * Allowing automatic insertion with the emboss taping 2.5 0.3 I Features 2 1 0.25 - 0.05 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 40 40 1.5 60 -40 to +125 -40 to +125 Unit V V A A C C 1.2 0.4 5.0 - 0.1 + 0.4 1.2 0.4 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PD Note) *1 : With a printed-circuit board (copper foil area 2.5 mm x 2.5 mm + 0.8 mm x 20 mm or more on both cathode and anode sides) *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 40 V IF = 2 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 70 50 Conditions Min Typ Max 2 0.55 Unit mA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 20 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 2.15 0.3 + 0.1 1.4 0.2 1 MA2Q738 IF(AV) Ta (1) Printed-circuit board: Glass epoxy board (2) Printed-circuit board: Alumina board Copper foil for both A and K sides 2.5 mm x 2.5 mm + 0.8 mm x 20 mm 104 Schottky Barrier Diodes (SBD) IF V F 105 75C 25C IR VR A K 2.5 103 104 Ta = 125C Average forward current IF(AV) (A) 0.8 2.0 Forward current IF (mA) Reverse current IR (A) (2) 20 2.5 TC = 125C - 20C 1.5 (1) 102 103 75C 102 1.0 10 0.5 1 10 25C 0 0 50 100 150 10-1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 Ambient temperature Ta (C) Forward voltage VF (V) Reverse voltage VR (V) VF Ta 0.8 0.7 IR T a 104 VR = 40 V 10 V 5V 600 Ct VR 103 0.6 0.5 0.4 0.3 0.2 0.1 10 mA 0 -40 0 40 80 120 160 200 IF = 2 A Terminal capacitance Ct (pF) 500 Forward voltage VF (V) Reverse current IR (A) 400 102 300 10 200 100 mA 1 100 10-1 -40 0 0 40 80 120 160 200 0 10 20 30 40 50 60 Ambient temperature Ta (C) Ambient temperature Ta (C) Reverse voltage VR (V) 2 |
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