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| DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. 8 PACKAGE DIMENSIONS (in millimeter) 5 FEATURES * Low On-Resistance RDS(on)1 = 27 m Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 m Max. (VGS = 4 V, ID = 3.5 A) * Low Input Capacitance 1.44 1.8 MAX. 1 5.37 MAX. +0.10 -0.05 1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain 4 6.0 0.3 4.4 0.8 Ciss = 820 pF Typ. * Built-in G-S Protection Diode * Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25 C, all terminals are connected) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)Note 1 C)Note 2 Total Power Dissipation (TA = 25 Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm2 x 1.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 20 7.0 28 2.0 150 -55 to +150 V V A A W C C Gate Gate Protection Source Diode Body Diode Drain The information in this document is subject to change without notice. Document No. G12008EJ1V0DS00 (1st edition) Date Published April 1997 N Printed in Japan (c) 1996 PA1700A ELECTRICAL CHARACTERISTICS (TA = 25 C, all terminals are connected) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) |yfs| IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = 7.0 A VDD = 24 V VGS = 10 V IF = 7.0 A, VGS = 0 IF = 7.0 A, VGS = 0 di/dt = 100 A/s TEST CONDITIONS VGS = 10 V, ID = 3.5 A VGS = 4 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 3.5 A VGS(on) = 10 V VDD = 15 V RG = 10 820 350 160 18 98 57 32 20 2.4 5.6 0.79 36 35 1.0 5.0 MIN. TYP. 18 28 1.6 9.0 10 10 MAX. 27 50 2.0 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS D.U.T. IG = 2 mA VGS(on) 90 % VGS Wave Form RL VDD 0 10 % PG. 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 2 PA1700A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 1200 mm2 x 1.7 mm 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 i )L m d ite ) V 10 ID(pulse) = 28 A Note Mounted on ceramic substrate of 1200 mm2 x 1.7 mm 1 10 10 0 m s m ID - Drain Current - A R D 10 on = S( GS tV (a ID(DC) = 7 A s m s Po we 1 rD iss ipa tio n Lim ite 0.1 0.1 TA = 25 C Single Pulse d 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 10 1 0.1 Mounted on ceramic substrate of 1200 mm 2 to 1.7 mm Single Single Pulse Pulse Channel to Ambient 1m 10 m 100 m 1 10 100 1000 10 000 0.01 0.001 100 PW - Pulse Width - s 3 PA1700A FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 20 ID - Drain Current - A 10 Tch = 125 C 75 C 25 C -25 C ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS = 10 V 4V 10 1 0.1 VDS = 10 V 0 2 4 6 8 0 0.2 0.4 0.6 0.8 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 100 RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed Tch = -25 C 25 C 75 C 125 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 150 ID = 3.5 A 100 10 1 50 0.1 1 10 100 0 5 10 15 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V Pulsed 70 60 50 40 30 20 10 0 1 10 ID - Drain Current - A 100 VGS=10 V VGS = 4 V 2.0 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 1.0 0 -20 0 20 40 60 80 100 120 140 Tch - Channel Temperature - C 4 PA1700A RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed VGS = 4 V 30 ISD - Diode Forward Current - A 40 100 10 VGS = 10 V 1 VGS = 0 20 10 V 10 ID = 3.5 A -20 0 20 40 60 80 100 120 0.1 0 0.5 1.0 1.5 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns 10 000 1 000 tr 100 td(off) tf td(on) 10 1 000 Ciss Coss 100 Crss 10 0.1 1 10 100 1 0.1 1 VDD = 15 V VGS(on) = 10 V RG = 10 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 di/dt = 100 A/ s VGS = 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V ID = 7 A 14 30 VDD = 24 V 15 V 6V VGS 8 6 10 VDS 0 5 10 15 20 4 2 0 12 10 20 100 10 1 0.1 1 10 100 IF - Diode Current - A QG - Gate Charge - nC 5 VGS - Gate to Source Voltage - V PA1700A REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. C11745E C11531E C10535E C10943X MEI-1202 TEA-1035 TEA-1037 6 PA1700A [MEMO] 7 PA1700A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 |
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