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| DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode FEATURES * Hermetically sealed leaded glass SOD27 (DO-35) package * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 90 V * Repetitive peak reverse voltage: max. 90 V * Repetitive peak forward current: max. 800 mA * Repetitive peak reverse current: max. 600 mA * Capable of absorbing transients repetitively. Marking code: BAX12. handbook, halfpage k BAX12 DESCRIPTION The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APPLICATIONS * Switching of inductive loads in semi-electronic telephone exchanges. Fig.1 Simplified outline (SOD27; DO35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t = 10 ms Ptot IRRM ERRM Tstg Tj Notes 1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating. 2. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation repetitive peak reverse current repetitive peak reverse energy storage temperature junction temperature tp 50 s; f 20 Hz; Tj = 25 C Tamb = 25 C; note 2 - - - - - - -65 - 55 15 9 450 600 5.0 +200 200 A A A mW mA mJ C C note 1 note 1 see Fig.2; note 2 CONDITIONS MIN. - - - - MAX. 90 90 400 800 V V mA mA UNIT 1996 Sep 17 2 Philips Semiconductors Product specification Controlled avalanche diode ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.3 IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA IR reverse current see Fig.5 VR = 90 V VR = 90 V; Tj = 150 C V(BR)R Cd trr reverse avalanche breakdown voltage diode capacitance reverse recovery time IR = 1 mA f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.10 - - 120 - - 100 100 170 35 50 - - - - - 750 840 900 1.0 MIN. MAX. BAX12 UNIT mV mV mV V V nA A V pF ns 1.25 THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 375 UNIT K/W K/W 1996 Sep 17 3 Philips Semiconductors Product specification Controlled avalanche diode GRAPHICAL DATA BAX12 handbook, halfpage 500 IF (mA) 400 MBG455 handbook, halfpage 600 MBG463 IF (mA) (1) (2) (3) 400 300 200 200 100 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2 Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG702 10 1 10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10 102 103 tp (s) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 4 Philips Semiconductors Product specification Controlled avalanche diode BAX12 107 handbook, full pagewidth MBG696 IR (nA) 106 105 104 103 102 10 0 100 Tj (oC) 200 VR = 90 V. Solid line; maximum values. Dotted line; typical values. Fig.5 Reverse current as a function of junction temperature. handbook, half age MGD003 handbook, halfpage 40 103 PRRM (W) 102 (1) MBG701 Cd (pF) 30 20 10 10 0 0 10 20 VR (V) 30 1 10-2 10-1 1 t (ms) 10 Solid line; rectangular waveform; 0.01. Dotted line; triangular waveform; 0.02. (1) Limited by IRMM = 600 mA. f = 1 MHz; Tj = 25 C. Fig.7 Fig.6 Diode capacitance as a function of reverse voltage; typical values. Maximum permissible repetitive peak reverse power as a function of the pulse duration T 50 ms; Tj = 25 C. 1996 Sep 17 5 Philips Semiconductors Product specification Controlled avalanche diode BAX12 handbook, halfpage handbook, halfpage MBG699 600 MBG698 VR IR (mA) time 400 (1) (2) (3) (4) IR 200 time 0 100 t (rectangular waveform) t t (triangular = T waveform) 150 VR (V) 200 T Reverse voltages higher than the VR ratings are allowed, provided: a. The transient energy 7.5 mJ at PRRM 30 W; Tj = 25 C; the transient energy 5 mJ at PRRM = 120 W; Tj = 25 C (see Fig.7). b. T 50 ms; 0.01 (rectangular waveform) (see Fig.9). 0.02 (triangular waveform) (see Fig.9). With increasing temperature, the maximum permissible transient energy must be decreased by 0.03 mJ/K. (1) Tj = 25 C; minimum values. (2) Tj = 175 C; minimum values. (3) Tj = 25 C; maximum values. (4) Tj = 175 C; maximum values. Fig.8 Reverse current as a function of continuous reverse voltage. Fig.9 Peak reverse voltage and current test pulses. 1996 Sep 17 6 Philips Semiconductors Product specification Controlled avalanche diode BAX12 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal Input signal: reverse pulse rise time tr = 0.6 ns; reverse pulse duration tp = 100 ns; duty factor = 0.05. Oscilloscope: rise time tr = 0.35 ns. Circuit capacitance: C 1 pF (oscilloscope input capacitance + parasitic capacitance). (1) IR = 3 mA. Fig.10 Reverse recovery voltage test circuit and waveforms. 1996 Sep 17 7 Philips Semiconductors Product specification Controlled avalanche diode PACKAGE OUTLINE BAX12 andbook, full pagewidth 0.56 max 1.85 max 25.4 min 4.25 max 25.4 min MLA428 - 1 Dimensions in mm. Fig.11 SOD27 (DO-35). DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 17 8 |
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