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| LM6162 LM6262 LM6362 High Speed Operational Amplifier September 1995 LM6162 LM6262 LM6362 High Speed Operational Amplifier General Description The LM6362 family of high-speed amplifiers exhibits an excellent speed-power product delivering 300 V ms and 100 MHz gain-bandwidth product (stable for gains as low as a 2 or b 1) with only 5 mA of supply current Further power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to a 5V These amplifiers are built with National's VIPTM (Vertically Integrated PNP) process which provides fast transistors that are true complements to the already fast NPN devices This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation Y Y Y Y Y Y Y Low supply current Fast settling time Low differential gain Low differential phase Wide supply range Stable with unlimited capacitive load Well behaved easy to apply 5 mA 120 ns to 0 1% k 0 1% k0 1 4 75V to 32V Applications Y Y Y Y Video amplifier Wide-bandwidth signal conditioning for image processing (FAX scanners laser printers) Hard disk drive preamplifier Error amplifier for high-speed switching regulator Features Y Y High slew rate High gain-bandwidth product 300 V ms 100 MHz Connection Diagrams 20-Lead LCC 10-Pin Ceramic Flatpak TL H 11061 - 15 Top View See NS Package Number W10A TL H 11061 - 2 TL H 11061-14 Top View See NS Package Number E20A Temperature Range Military b 55 C s TA s a 125 C LM6162N LM6162J 883 5962-9216501PA LM6262M LM6162E 883 5962-92165012A LM6162W 883 5962-9216501HA LM6362M Industrial b 25 C s TA s a 85 C LM6262N Commercial 0 C s TA s a 70 C LM6362N See NS Package Number N08E M08A or J08A Package NSC Drawing N08E J08A M08A E20A W10A 8-Pin Molded DIP 8-Pin Ceramic DIP 8-Pin Molded Surface Mt 20-Lead LCC 10-Pin Ceramic Flatpak VIPTM is a trademark of National Semiconductor Corporation C1995 National Semiconductor Corporation TL H 11061 RRD-B30M115 Printed in U S A Absolute Maximum Ratings (Note 1) See AN-450 ``Surface Mounting Methods and Their Effect on Product Reliability'' for other methods of soldering surface mount devices Storage Temperature Range Max Junction Temperature ESD Tolerance (Note 5) b 65 C s TJ s a 150 C If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage (V a - Vb) Differential Input Voltage (Note 2) Common-Mode Input Voltage (Note 3) Output Short Circuit to GND (Note 4) Soldering Information Dual-In-Line Package (N) Soldering (10 seconds) Small Outline Package (M) Vapor Phase (60 seconds) Infrared (15 seconds) 36V g8V 150 C g1100V (V a b0 7V) to (Vb a 0 7V) Continuous Operating Ratings Temperature Range (Note 6) LM6162 LM6262 LM6362 Supply Voltage Range b 55 C s TJ s a 125 C b 25 C s TJ s a 85 C 260 C 215 C 220 C 0 C s TJ s a 70 C 4 75V to 32V DC Electrical Characteristics These limits apply for supply voltage e g15V VCM e 0V and RL t 100 kX unless otherwise specified Limits in standard typeface are for TA e TJ e 25 C limits in boldface type apply over the Operating Temperature Range Symbol VOS DVOS DTemp Ibias IOS DIOS DTemp RIN CIN AVOL Parameter Input Offset Voltage Input Offset Voltage Average Drift Input Bias Current Input Offset Current Input Offset Current Average Drift Input Resistance Input Capacitance Large Signal Voltage Gain VOUT e g10V RL e 2 kX (Note 9) RL e 10 kX VCM Input Common-Mode Voltage Range Supply e g15V Differential Conditions Typical (Note 7) g3 LM6162 Limit (Note 8) g5 g8 LM6262 Limit (Note 8) g5 g8 LM6362 Limit (Note 8) g13 g15 Units mV max mV C 7 22 3 6 g350 g800 3 5 g350 g600 4 6 g1500 g1900 mA max nA max nA C kX pF g150 03 180 20 1400 6500 a 14 0 b 13 2 a 13 9 a 13 8 b 12 9 b 12 7 a 13 9 a 13 8 b 12 9 b 12 7 a 13 8 a 13 7 b 12 9 b 12 8 1000 500 1000 700 800 650 VV min VV V min V max V min V max dB min dB min V min V max Supply e a 5V (Note 10) 40 16 39 38 18 20 83 79 83 79 a 13 5 a 13 3 b 13 0 b 12 7 39 38 18 20 83 79 83 79 a 13 5 a 13 3 b 13 0 b 12 8 38 37 19 20 76 74 76 74 a 13 4 CMRR PSRR VO Common-Mode Rejection Ratio Power Supply Rejection Ratio Output Voltage Swing b 10V s VCM s a 10V g10V s VS s g16V 100 93 a 14 2 b 13 4 Supply e g15V RL e 2 kX 13 3 b 12 9 b 12 8 2 DC Electrical Characteristics (Continued) These limits apply for supply voltage e g15V VCM e 0V and RL t 100 kX unless otherwise specified Limits in standard typeface are for TA e TJ e 25 C limits in boldface type apply over the Operating Temperature Range Symbol VO Parameter Output Voltage Swing Conditions Supply e a 5V and RL e 2 kX (Note 10) Typical (Note 7) 42 13 IOSC Output Short Circuit Current Sourcing Sinking IS Supply Current 65 65 50 LM6162 Limit (Note 8) 35 33 17 20 30 20 30 20 65 68 LM6262 Limit (Note 8) 35 33 17 19 30 25 30 25 65 67 LM6362 Limit (Note 8) 34 33 18 19 30 25 30 25 68 69 Units V min V max mA min mA min mA max AC Electrical Characteristics These limits apply for supply voltage e g15V VCM e 0V RL t 100 kX and CL s 5 pF unless otherwise specified Limits in standard typeface are for TA e TJ e 25 C limits in boldface type apply over the Operating Temperature Range Symbol GBW Parameter Gain-Bandwidth Product Conditions f e 20 MHz Supply e g5V SR Slew Rate AV e a 2 (Note 11) Supply e g5V PBW ts wm Power Bandwidth Settling Time Phase Margin Differential Gain Differential Phase en in Input Noise Voltage Input Noise Current VOUT e 20 VPP 10V step to 0 1% AV e b1 RL e 2 kX AV e a 2 NTSC AV e a 2 NTSC AV e a 2 f e 10 kHz f e 10 kHz Typical (Note 7) 100 70 300 200 45 100 45 k0 1 k0 1 LM6162 Limit (Note 8) 80 55 LM6262 Limit (Note 8) 80 65 LM6362 Limit (Note 8) 75 65 Units MHz min MHz 200 180 200 180 200 180 V ms min V ms MHz ns deg % deg nV pA 10 12 SHz SHz Note 1 Absolute maximum ratings indicate limits beyond which damage to the component may occur Electrical specifications do not apply when operating the device beyond its rated operating conditions Note 2 The ESD protection circuitry between the inputs will begin to conduct when the differential input voltage reaches 8V Note 3 a) In addition the voltage between the V a pin and either input pin must not exceed 36V b) When the voltage applied to an input pin is driven more than 0 3V below the negative supply pin voltage a substrate diode begins to conduct Current through this pin must then be kept less than 20 mA to limit damage from self-heating Note 4 Although the output current is internally limited continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 C Note 5 This value is the average voltage that the weakest pin combinations can withstand and still conform to the datasheet limits The test circuit used consists of the human body model 100 pF in series with 1500X Note 6 The typical thermal resistance junction-to-ambient of the molded plastic DIP (N package) is 105 C W For the molded plastic SO (M package) use 155 C W All numbers apply for packages soldered directly into a printed circuit board Note 7 Typical values are for TJ e 25 C and represent the most likely parametric norm Note 8 Limits are guaranteed by testing or correlation Note 9 Voltage Gain is the total output swing (20V) divided by the magnitude of the input signal required to produce that swing Note 10 For single-supply operation the following conditions apply V a e 5V Vb e 0V VCM e 2 5V VOUT e 2 5V Pin 1 and Pin 8 (VOS Adjust pins) are each connected to pin 4 (Vb) to realize maximum output swing This connection will increase the offset voltage Note 11 VIN e 10V step For g5V supplies VIN e 1V step Note 12 A military RETS electrical test specification is available on request 3 Typical Performance Characteristics Supply Current vs Supply Voltage RL e 10 kX TA e 25 C unless otherwise noted Power Supply Rejection Ratio Common-Mode Rejection Ratio Gain-Bandwidth Product vs Supply Voltage Gain-Bandwidth Product vs Load Capacitance Propagation Delay Rise and Fall Times Slew Rate vs Supply Voltage Slew Rate vs Load Capacitance Overshoot vs Load Capacitance Output Impedance (Open-Loop) Voltage Gain vs Load Resistance Voltage Gain vs Supply Voltage TL H 11061 - 3 4 Typical Performance Characteristics RL e 10 kX TA e 25 C unless otherwise noted Differential Gain (Note) (Continued) Differential Phase (Note) TL H 11061 - 5 Note Differential gain and differential phase measured for four series LM6362 op amps configured with gain of a 2 each in series with a 1 16 attenuator and an LM6321 buffer Error added by LM6321 is negligible Test performed using Tektronix Type 520 NTSC test system TL H 11061 - 4 Step Response Av e a 2 Input (1V div) Output (2V div) TIME (50 ns div) TL H 11061 - 6 Input Noise Voltage Input Noise Current Power Bandwidth TL H 11061 - 7 5 Typical Performance Characteristics RL e 10 kX TA e 25 C unless otherwise noted (Continued) Open-Loop Frequency Response Open-Loop High-Frequency Response TL H 11061-8 TL H 11061 - 9 Common-Mode Input Voltage Limits Output Saturation Voltage Bias Current vs Common-Mode Voltage TL H 11061 - 10 Simplified Schematic TL H 11061 - 1 6 Application Tips The LM6362 has been decompensated for a wider gainbandwidth product than the LM6361 However the LM6362 still offers stability at gains of 2 (and b1) or greater over the specified ranges of temperature power supply voltage and load Since this decompensation involved reducing the emitter-degeneration resistors in the op amp's input stage the DC precision has been increased in the form of lower offset voltage and higher open-loop gain Other op amps in this family include the LM6361 LM6364 and LM6365 If unity-gain stability is required the LM6361 should be used The LM6364 has been decompensated for operation at gains of 5 or more with corresponding greater gain-bandwidth product (125 MHz typical) and DC precision The fully-uncompensated LM6365 offers gain-bandwidth product of 725 MHz typical and is stable for gains of 25 or more All parts in this family regardless of compensation have the same high slew rate of 300 V ms (typ) The LM6362 is unusually tolerant of capacitive loads Most op amps tend to oscillate when their load capacitance is greater than about 200 pF (in low-gain circuits) However load capacitance on the LM6362 effectively increases its compensation capacitance thus slowing the op amp's response and reducing its bandwidth The compensation is not ideal though and ringing may occur in low-gain circuits with large capacitive loads Power supply bypassing is not as critical for LM6362 as it is for other op amps in its speed class However bypassing will improve the stability and transient response of the LM6362 and is recommended for every design 0 01 mF to 0 1 mF ceramic capacitors should be used (from each supply ``rail'' to ground) if the device is far away from its power supply source an additional 2 2 mF to 10 mF of tantalum may be required for extra noise reduction Keep all leads short to reduce stray capacitance and lead inductance and make sure ground paths are low-impedance especially where heavier currents will be flowing Stray capacitance in the circuit layout can cause signal coupling from one pin input or lead to another and can cause circuit gain to unintentionally vary with frequency Breadboarded circuits will work best if they are built using generic PC boards with a good ground plane If the op amps are used with sockets as opposed to being soldered into the circuit the additional input capacitance may degrade circuit frequency response At low gains ( a 2 or b1) a feedback capacitor Cf from output to inverting input will compensate for the phase lag caused by capacitance at the inverting input Typically values from 2 pF to 5 pF work well however best results can be obtained by observing the amplifier pulse response and optimizing Cf for the particular layout Typical Applications Offset Voltage Adjustment Inverting Amplifier 30 MHz Bandwidth TL H 11061 - 11 Operation on g15V supplies results in wider bandwidth 50 MHz (typ) TL H 11061 - 12 7 Typical Applications (Continued) Video Cable Driver Network required when operating on supply voltage over g5V for overvoltage protection of LM6321 If g5V supplies are used omit network and connect output of LM6362 directly to input of LM6321 TL H 11061 - 13 8 9 Physical Dimensions inches (millimeters) 20-Lead Small Outline Package (E) Order Number LM6162E 883 NS Package Number E20A Ceramic Dual-In-Line Package (J) Order Number LM6162J 883 NS Package Number J08A 10 Physical Dimensions inches (millimeters) (Continued) Molded Package SO (M) Order Number LM6262M or LM6362M NS Package Number M08A Molded Dual-In-Line Package (N) Order Number LM6162N LM6262N or LM6362N NS Package Number N08E 11 LM6162 LM6262 LM6362 High Speed Operational Amplifier Physical Dimensions inches (millimeters) (Continued) 10-Pin Ceramic Flatpak Order Number LM6162W 883 NS Package Number W10A LIFE SUPPORT POLICY NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications |
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