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| Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features * High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz * High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz * Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT * Hermetic Gold-ceramic Microstrip Package functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 up to 1 GHz , makes this device easy to use as a low noise amplifier. The AT-42010 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 100 mil Package Description Hewlett-Packard's AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different 5965-8910E 4-154 AT-42010 Absolute Maximum Ratings [1] Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum 1.5 20 12 80 600 200 -65 to 200 Thermal Resistance [2,4]: jc = 150C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6.7 mW/C for TC > 110C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB Parameters and Test Conditions[1] Insertion Power Gain; VCE = 8 V, IC = 35 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB dB GHz -- A A pF 30 Min. 10.5 Typ. Max. 11.5 5.5 21.0 20.5 14.0 9.5 1.9 3.0 13.5 10.0 8.0 150 270 0.2 2.0 0.28 Notes: 1. For this test, the emitter is grounded. 4-155 AT-42010 Typical Performance, TA = 25C 20 24 24 2.0 GHz P1 dB (dBm) P1 dB (dBm) 10 V 6V 4V 1.0 GHz 20 16 12 P1dB 16 20 4.0 GHz P1dB 2.0 GHz |S21E|2 GAIN (dB) 12 2.0 GHz 16 8 12 16 G1 dB (dB) 4.0 GHz G1 dB (dB) G1dB 4 8 14 G1dB 4.0 GHz 12 10 0 10 20 30 IC (mA) 40 10 V 6V 4V 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 50 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 40 35 30 MSG 24 21 GA 18 GAIN (dB) 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) MAG |S21E|2 GAIN (dB) 25 15 12 9 6 3 0 0.5 1.0 2.0 NFO 4 3 2 1 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 4-156 NFO (dB) AT-42010 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC Freq. S11 GHz Mag. Ang. 0.1 .74 -47 0.5 .65 -136 1.0 .63 -168 1.5 .63 174 2.0 .63 161 2.5 .64 154 3.0 .65 145 3.5 .66 136 4.0 .66 126 4.5 .66 115 5.0 .66 103 5.5 .68 90 6.0 .72 81 = 10 mA dB 28.5 21.4 15.9 12.6 10.1 8.4 6.9 5.8 4.7 3.8 3.0 2.1 1.3 S21 Mag. 26.65 11.71 6.24 4.26 3.23 2.64 2.22 1.94 1.72 1.55 1.41 1.28 1.16 Ang. 153 103 82 69 57 51 41 31 21 11 1 -9 -19 dB -36.4 -29.4 -27.2 -26.0 -24.6 -23.0 -22.0 -21.0 -19.7 -18.0 -17.3 -16.1 -15.4 S12 Mag. .015 .034 .044 .050 .059 .070 .080 .090 .104 .126 .136 .156 .170 S22 Ang. 72 38 36 42 43 52 54 51 50 45 41 36 31 Mag. .91 .51 .40 .38 .38 .38 .37 .38 .39 .40 .40 .40 .37 Ang. -18 -39 -42 -45 -49 -51 -56 -65 -74 -82 -89 -98 -110 AT-42010 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .54 -90 33.3 45.97 138 0.5 .62 -163 22.8 13.83 94 1.0 .62 177 17.0 7.10 78 1.5 .62 166 13.6 4.82 67 2.0 .62 155 11.3 3.65 56 2.5 .63 150 9.5 2.99 51 3.0 .64 142 8.0 2.52 42 3.5 .65 133 6.8 2.19 32 4.0 .65 124 5.7 1.93 22 4.5 .65 113 4.7 1.72 13 5.0 .66 102 3.9 1.56 3 5.5 .69 91 3.0 1.41 -6 6.0 .73 83 2.1 1.27 -16 A model for this device is available in the DEVICE MODELS section. dB -39.2 -33.2 -28.8 -26.2 -23.8 -21.8 -21.0 -19.7 -18.4 -17.2 -16.6 -15.6 -14.9 S12 Mag. .011 .022 .036 .049 .065 .081 .090 .103 .120 .138 .148 .166 .180 S22 Ang. 54 52 59 61 57 62 63 59 54 49 45 39 32 Mag. .76 .34 .30 .29 .29 .29 .30 .30 .31 .33 .34 .33 .30 Ang. -29 -40 -40 -42 -47 -50 -57 -67 -76 -85 -92 -100 -110 AT-42010 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.0 1.1 1.5 1.9 3.0 opt Mag .04 .05 .10 .23 .45 Ang 15 76 132 -177 -125 RN/50 0.13 0.12 0.12 0.11 0.26 4-157 100 mil Package Dimensions .040 1.02 4 EMITTER .020 .508 BASE 1 COLLECTOR 3 2 EMITTER .004 .002 .10 .05 .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .495 .030 12.57 .76 .030 .76 4-158 |
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