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| BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 -- 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9107-55ATE in SOT426 (D2-PAK) BUK9907-55ATE in SOT263B. 2. Features s s s s Typical on-state resistance 5.8 m Q101 compliant ESD protection Monolithically integrated temperature sensor for overload protection. 3. Applications s Automotive and power switching: x 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)) x Protected drive for lamps. 4. Pinning information Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B simplified outline and symbol Simplified outline mb mb Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d) Symbol d a g 12345 MBL317 s k Front view MBK127 1 5 SOT426 (D2-PAK) MBL263 SOT263B Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 C Tmb = 25 C; VGS = 5 V Tmb = 25 C Tj = 25 C; VGS = 5 V; ID = 50 A Tj = 25 C; VGS = 4.5 V; ID = 50 A Tj = 25 C; VGS = 10 V; ID = 50 A VF SF temperature sense diode forward voltage temperature sense diode temperature coefficient Tj = 25 C; IF = 250 A -55 C < Tj < 175 C; IF = 250 A Typ 5.8 6 5.2 658 -1.54 Max 55 140 272 175 7 7.7 6.2 668 -1.68 Unit V A W C m m m mV mV/K drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 2 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 IDM Ptot IGS(CL) drain current (peak value) total power dissipation gate-source clamping current Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 continuous tp = 5 ms; = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM Clamping EDS(CL)S non-repetitive drain-source clamping energy unclamped inductive load; ID = 75 A; VDS 55 V; VGS = 5 V; RGS = 50 ; starting Tj = 25 C Human Body Model; C = 100 pF; R = 1.5 k 500 mJ storage temperature junction temperature reverse drain current (DC) pulsed reverse drain current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s [2] [3] [1] [2] [3] [3] Conditions Min -55 -55 - Max 55 55 15 140 75 75 560 272 10 50 100 +175 +175 140 75 560 Unit V V V A A A A W mA mA V C C A A A Source-drain diode Electrostatic discharge Vesd electrostatic discharge voltage; pins 1, 3, 5 [1] [2] [3] - 6 kV Voltage is limited by clamping Current is limited by power dissipation chip rating Continuous current is limited by package. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 3 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 120 Pder (%) 80 03na19 150 ID (A) 125 03ne74 100 75 40 Capped at 75 A due to package 50 25 0 0 50 100 150 200 Tmb ( C) 0 25 50 75 100 125 150 175 200 Tmb (oC) P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 5 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 ID (A) 03nf55 RDSon = VDS/ID tp = 10 us 102 100 us Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 4 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 7. Thermal characteristics Table 4: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in still air; SOT263B package mounted on printed circuit board; minimum footprint; SOT426 package Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Min Typ Max 60 50 Unit K/W K/W - - 0.55 K/W 7.1 Transient thermal impedance 1 Z th(j-mb) (K/W) 03ne76 = 0.5 10-1 0.2 0.1 0.05 P 10-2 0.02 = tp T Single Shot tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 5 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V 55 Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C V(BR)GSS IGSS RDSon gate-source breakdown voltage gate-source leakage current drain-source on-state resistance IG = 1 mA; -55 C < Tj < 175 C VGS = 5 V; VDS = 0 V VGS = 5 V; ID = 50 A; Figure 7 and 8 Tj = 175 C VGS = 4.5 V; ID = 50 A VGS = 10 V; ID = 50 A VF SF Vhys temperature sense diode forward voltage temperature sense diode temperature coefficient temperature sense diode forward voltage hysteresis total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time VDD = 30 V; RL = 1.2 ; VGS = 5 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 IF = 250 A IF = 250 A; -55 C < Tj < 175 C 125 A < IF < 250 A 648 -1.4 25 5.8 6 5.2 658 -1.54 32 7 14 7.7 6.2 668 -1.68 50 m m m m mV mV/K mV 12 0.1 15 5 10 250 1000 A A V nA 1 0.5 1.5 2 2.3 V V V 50 V V Min Typ Max Unit Static characteristics Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VGS = 5 V; VDD = 44 V; ID = 50 A; Figure 14 108 15 47 5836 958 595 51 202 341 207 nC nC nC pF pF pF ns ns ns ns 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 6 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET Table 5: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol Ld Parameter internal drain inductance Conditions from upper edge of drain mounting base to centre of die from source lead to source bond pad IS = 25 A; VGS = 0 V; Figure 17 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Min Typ 2.5 Max Unit nH Ls internal source inductance - 7.5 - nH Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 85 250 1.2 V ns nC 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 7 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET ID 400 (A) 350 300 03ne77 V GS = 5 V 6 10 4.6 4.4 4.2 4 25 RDSon (m) 20 03ne79 250 200 150 100 50 0 0 2 4 6 8 10 VDS (V) 3.8 3.6 15 3.4 3.2 10 3 2.8 5 2.6 2.4 2.2 0 2 4 6 8V 10 GS (V) Tj = 25 C; tp = 300 s Tj = 25 C; ID = 50 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 2 03ne89 handbook, halfpage 16 RDSon (m) 14 03ne78 a 1.5 VGS = 3 V 3.6 3.2 3.4 3.8 4 12 1 10 8 5 10 0.5 6 0 50 100 150 200 250 300 ID (A) 0 -60 0 60 120 Tj (C) 180 Tj = 25 C; tp = 300s R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 8 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 2.5 VGS(th) (V) 2 max 03na17 10-1 ID (A) 10-2 03na18 typ 1.5 min 10-3 min typ max 1 10-4 0.5 10-5 0 -60 -20 20 60 100 140 180 Tj (oC) 10-6 0 0.5 1 1.5 2 2.5 3 V (V) GS ID = 1 mA; VDS = VGS Tj = 25 C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 140 gfs (S) 120 100 80 60 03ne81 16000 C (pF) 14000 12000 10000 8000 6000 03ne86 Ciss 40 4000 20 0 0 20 40 60 80 I (A) 100 D 2000 0 10-2 10-1 1 10 VDS (V) Coss Crss 102 Tj = 25 C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 9 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 100 ID (A) 80 03ne80 5 VGS (V) 4 VDS = 14 V 03nf65 60 3 Tj = 175 C 40 2 VDS = 44 V 20 1 Tj = 25 C 0 0.0 1.0 2.0 VGS (V) 3.0 0 0 20 40 60 80 100 120 QG (nC) VDS = 25 V Tj = 25 C; ID = 50 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 700 VF (mV) 03ne84 1.70 -SF (mV/K) 1.65 03ne85 max 600 1.60 typ 1.55 500 1.50 1.45 min 400 0 50 100 150 Tj (C) 200 1.40 645 650 655 660 665 670 675 VF (mV) IF = 250 A VF at Tj = 25 C; IF = 250 A Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values. Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 10 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 100 IS (A) 80 Tj = 175 C 60 03ne88 40 Tj = 25 C 20 0 0.0 0.5 1.0 VSD (V) 1.5 VGS = 0 V Fig 17. Reverse diode current as a function of reverse diode voltage; typical values. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 11 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 9. Package outline Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426 A E A1 D1 mounting base D HD 3 1 Lp 2 4 5 b c Q e e e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT426 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 Fig 18. SOT426. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 12 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B E p1 p A A1 q D1 D mounting base L1 Q m L L2 1 e b 5 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.85 0.70 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 1.7 L 15.0 13.5 L1 (1) L2 (2) m 0.8 0.6 p 3.8 3.6 p1 4.3 4.1 q 3.0 2.7 Q 2.6 2.2 w 0.4 2.4 1.6 0.5 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B REFERENCES IEC JEDEC 5-lead TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-11 Fig 19. SOT263B. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 13 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 10. Soldering handbook, full pagewidth 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.35 8.275 1.50 4.60 0.30 4.85 5.40 8.075 7.95 3.00 0.20 solder lands solder resist occupied area solder paste 1.70 (2x) 3.40 8.15 0.90 1.00 MSD058 Dimensions in mm. Fig 20. Reflow soldering footprint for SOT426. 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 14 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 11. Revision history Table 6: Rev Date 01 20020207 Revision history CPCN Description Product specification; initial version 9397 750 09138 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 15 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET 12. Data sheet status Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 13. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks -- TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 09138 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 -- 7 February 2002 16 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 (c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 7 February 2002 Document order number: 9397 750 09138 |
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