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CXA3171N
4ch. Read/Write Amplifier for three terminal MIG Head of Hard Disk Drive
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Description The CXA3171N is a Read/Write Amplifier for the special three terminal MIG head of hard disk drive and designed to handle up to 4 channel heads. Features * Operate on single +5 V power supply * Low power consumption Read : 95 mW Write : 115 mW + IW x 5 * Designed for special three terminal MIG heads * Read amplifier emitter follower output featuring 420 times gain (typ). * Differential input capacitance for Read : 6.7 pF (typ) * Input noise : 0.46nV / Hz (typ) * Differential Head voltage swing : 9 Vp-p (typ) * Differential P-ECL write data input * Built-in write unsafe detection circuit. * Built-in Servo write function (2/4 ch). * Built-in IC protection circuit for short of head and GND. * Read data outputs are high impedance in write mode. * Built-in supply voltage monitor circuit prohibits incorrect write during power on or abnormal voltage. * Self switching damping resistance (RD=420 ). Function Read, Write and Write unsafe detection for HDD, power supply ON/OFF detection. Structure Bipolar silicon monolithic IC 24 pin SSOP (Plastic)
Absolute Maximum Ratings (Ta=25 C) * Supply voltage VCC 6 V * Write current IW 23 mAo-p * Operating temperature Topr -20 to +75 C * Storage temperature Tstg -55 to +150 C * Allowable power dissipation PD 800 mW * WUS/SE pin input current ISEH 15 mA
Recommended Operating Conditions * Supply voltage VCC 5.0 V10 % * Write current IW 10 to 22 mAo-p
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
--1--
E97305A7X-TE
CXA3171N
H0X
1
AMP
24 GND MODE CONTROL
H0C
2
DRIVER
23 R/W
H0Y
3
WRITE CURRENT SOURCE
22 WC
H1X
4
AMP AMP
21 RDY
H1C
5
DRIVER
20 RDX
H1Y
6
19 HS0
H2X
7
AMP
HEAD SELECT
18 HS1
H2C
8
DRIVER
17 NC
H2Y
9
16 WDX
H3X
10
AMP
15 WDY
H3C
11
DRIVER
WRITE UNSAFE DETECTOR POWER ON/OFF DETECTOR IC PROTECTOR
14 WUS/SE
H3Y
12
13 VCC
--2--
CXA3171N
Pin Description No. 24 Symbol GND
1
VCC
Equivalent circuit
Description
1 2 3 4 5 6 7 8 9 10 11 12
H0X H0C H0Y H1X H1C H1Y H2X H2C H2Y H3X H3C H3Y
4 7
10 2k 2k
2 5 8
11
Head. 4 channels provided.
3 6 9
12 GND
VCC
14
WUS/SE
14
Write unsafe detection output / Servo Enable signal input.
GND
VCC
15 16
WDY WDX
15 16
Differential P-ECL write data input.
GND
13 17
VCC NC
5 V power supply.
--3--
CXA3171N
No.
Symbol
Equivalent circuit
Description
VCC
18 19
HS1 HS0
18 19 R 2.1V GND HS0:R=78K, HS1:R=100K
Head select signal input. Selects one of 4 heads according to Table 2.
VCC
180k
23
R/W
23
Read/Write signal input At "High" : Read, at "Low" : Write.
2.1V GND
VCC
20 21
RDX RDY
20
Read Amplifier output.
21
GND
VCC
22
WC
22 2V GND
A setting resistor for the write current value is connected between this pin and GND.
--4--
Electrical Characteristics SW conditions 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Measurement conditions Test point : l2 Test point : l2 +IW 17 +IW 23 36 +IW 0.8 2.0 -100 100 12 19 28 mA mA V V A A V V 50 Input voltage : 4 V Output current : 1 mA Test point : V1 Test point : l3 0.5 50 A V A Min. Typ. Max. Unit aaaaaaaaebaabaabb bbbbaaaaebaabaaba
(Unless otherwise specified, VCC=5 V, Ta=25 C, Write current IW=20 mA)
No.
Item
Symbol
1-1
IR
1-2
IWR
2-1 Digital input : Pins 18, 19, 23
VIL
2-2 aaaaaaaaebaabaaba aaaaaaaaebaabbbbb "High" applied voltage : 5 V "Low" applied voltage : 0 V Test point : l6, l7, l8, I9
VIH
2-3
IIL
2-4
IIH
--5-- bbbbaaaaebaabaaaa bbbbbaaabbaccaaba bbbbaaaaebaabaaba bbbbbaaaabaabaaba
2-5
VWDL
2-6
VWDH
VWDH -2.0 VCC -1.1
VWDH -0.25 VCC -0.4
2-7
IWD
3-1
VWUS
3-2
Current consumption for Read Current consumption for Write Digital input "Low" input voltage Digital input "High" input voltage Digital input "Low" input current Digital input "High" input current Write data input "Low" input voltage Write data input "High" input voltage Write data input current Write unsafe output saturation voltage Write unsafe output leak current
IWUS
4
Supply power ON/OFF detector threshold voltage
VTH
When VCC is lowered from 5 V in Write mode and IW does not flow anymore, VCC voltage is set to VTHOFF. When VCC is raised from 3 V and IW starts to flow, VCC voltage is set to VTHON.
3.4
3.9
4.3
V
CXA3171N
No. Measurement conditions 10 bbbbaaaaebaabaaaa IW=AW * VWC/RWC bbbbbaaaabaabaaba bbbbbaaaabbaaaaba bbbbbaaaabbaaaaba Servo write enabled Servo write enabled IW=KW/RWC 45 VCC +1.5 5 18 20 50 2.25 2.5 2.75 22 mAo-p V 22 mA/mA 55 VCC +1.6 14 V Min. Typ. Max. Unit
Item
Symbol
SW conditions 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
5-1
Write current setting range
IW
5-2
Write current voltage
VWC
5-3
Write current gain
AW
5-4
Write current setting constant
KW
6-1
WUS/SE voltage
VSEH
6-2
WUS/SE sink current
ISEH
mA
--6-- aaaabaaacbaabaabb aaaabaaacbaabaabb aaaaaaaaebaabaabb
7
Read amplifier differential voltage gain
AV
355
420
485
V/V
8
Frequency band width (-3 dB)
BW
100
140
MHz
9
Input referred noise
EN
Input voltage SG1 : 1 mVp-p, 300 kHz Load resistance (RDX, RDY) : 1 k Test point : V4 [Vp-p] V4 AV = SG1 Frequency at which AV lowers by 3 dB Head impedance : 0 , when the read amplifier output voltage is amplified 100 times and voltage passed though a LPF (low pass filter of cutoff frequency 15 MHz) is VN [Vrms], VN EN = 100 * AV 15 x 106 Test point : V5
0.46 0.65
nV Hz
CXA3171N
No. Measurement conditions Min. Typ. Max. Unit
Item
Symbol
SW conditions 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
10 aaaabaaadbaabaabb 50
Common mode rejection ration
CMRR
dB
11 aaaaaaaaeaaabaabb
Power supply rejection ratio
PSRR
50
dB
--7-- aaaaabaacbaabaabb aaaaaaaaebaabaaab
12
Channel separation
CS
50
dB
13
Read data output offset voltage for Read
VOFFR
In-phase input voltage SG2 : 100 mVp-p, 20 MHz When the Read amplifier output is VCM [mVp-p], 100 CMRR = 20 log VCM +20 log AV Test point : V4 Ripple voltage SG3 : 100 mVp-p, 20 MHz When the Read amplifier output is VP [mVp-p], 100 PSRR = 20 log VP +20 log AV Test point : V4 Selected head input voltage : 0 mVp-p Unselected head input voltage SG1 : 100 mVp-p, 20 MHz When the Read amplifier output is VCS [mVp-p], 100 CS = 20 log VCS +20 log AV Test point : V4 VOFFR = V2-V3 Test point : V2, V3 -300 300 mV
CXA3171N
No. Measurement conditions Min. Typ. Max. Unit
Item
Symbol
SW conditions 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
14 aaaaaaaaebaabaaac Test point : Pin 20, 21 -300 300
RDX, RDY common mode output voltage difference between modes mV
Vdiff
15 aaaaaaaaebaabaaab Test Point : V2, V3
RDX, RDY common mode output voltage for Read
VRD
VCC VCC VCC -2.6 -2.3 -2.0
V
--8--
CXA3171N
CXA3171N
Unless otherwise specified, VCC=5 V, Ta=25 C, fWD (Write data frequency) =5 MHz, IW=20 mA, LH (Head inductance) =1 H, RH (Head DC resistance value) =12 Refer to Fig. 2 to Fig. 4 No. Item Head differential voltage amplitude Symbol Measurement conditions Differential voltage between HX pin and HY pin at switching of Write current TRW is the time required for Write current to turn to 90 % after Pin 23 changes from "High" to "Low". TWR1 is the time required for the Read amplifier output to turn to 90 % after Pin 23 changes from "Low" to "High". TWR2 is the time required for Write current to decreases to 10 % after Pin 23 changes from "Low" to "High". TSA1 is the time required for Pin 14 to turn "High" after the last transition of Write data 1.0 when Write data is stopped in Write mode. TSA2 is the time required for Pin 14 to turn "Low" after the first transition of Write data in Write mode. TH is the time required for the Read amplifier output to reach 90 % when the selected head switched in Read mode. TPD is the time required for Write current to reach 90 % after the Write data falling edge. LH=0 H, RH=0 TR is the time required for Write current to reach 90 % from 10 %; TF is the same time required to reach 10 % from 90 %. LH=0 H, RH=0 Min. Typ. Max. Unit
14
VSW
9
Vp-p
Mode switching time 15-1 Read to Write
TRW
130 150
ns
TWR1 15-2 Mode switching time Write to Read TWR2
180 220
ns
100 200
ns
16-1
Mode switching time safe to unsafe Mode switching time unsafe to safe
TSA1
2.3
3
s
16-2
TSA2
0.6
s
17
Head switching time Write current propagation delay time Write current rise/fall time
TH
0.6
s
18
TPD
2
7
ns
19
TR/TF
1
3
ns
Read amplifier output 100 mVp-p 10 MHz
--9--
CXA3171N
Test Circuit 1
1 LPF x100 AMP x1 SG3 ab S10 1 1 PG SG5 PG 5V ab c S17 SG6 ab PG SG4 5.1k 6V VCC 5V VCC 5V
A
I2
V
V5
to15MHz
V
V4
AMP
V
V3 ab S16
V
V2 ab ab S15 S14 3V abc S13 4V a bc ab S11
V
V1
S12
A
24 23
I8
2.7k 22 21 20
A
19
I7
A
18
I6 17
A
16
I5
A
15
I4
A
14
I3 13
1
S1 ab
2
ab S5
3
4
S2
5
ab S6
6
7
S3
8
ab S7
9
10
11 ab
12
S4 ab ab
S8 ab
ab
ab
ab S9
ab
abcde
abc
de 0.1 SG2
A
I1 33
Fig. 1
0.1
0.1
SG1
Test Circuit 2
1k x1 AMP 1 5V 1k
1 PG 2.7k
1 PG PG PG 5.1k
24
23
22
21
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
9
10
11
12
LH
1H
LH
1H
LH
1H
LH
1H
--10--
Fig. 2
CXA3171N
Timing Chart 1
WDX WDY
R/W
50%
50%
TRW
TWR 2
90% IWX IWY 10%
90% 10% TWR1
RDX RDY
90%
Fig. 3
Timing Chart 2
WDX WDY
TPD 90% 10% TR 90% 90% 10% TF TSA1
IWX IWY
WUS TSA2
50%
50%
Fig. 4
--11--
CXA3171N
Description Functions Read amplifier This is a low noise amplifier for amplifying the signals from the heads with an emitter follower output. The RDX and RDY are the outputs of the differential amplifier whose polarity between the RDX and X side of the head input is same. Write circuit The Write data input to WDX pin and WDY pin passes through the buffer amp. It drives the Write switch circuit which supplies the Write current to the heads. The Write current flows into the X side when WDX is "Low" and WDY is "High". Mode control The mode are set as shown Table 1 by R/W and WUS/SE. R/W WUS/SE HS0 HS1 L X See Table 2 H X L See Table 3 Table 1. Mode selection
Mode Write Read Servo Write
Head selection The heads are selected as shown in Table 2 by the HS0, HS1 and HS2 pins. HS0 HS1 Head L L 0 H L 1 L H 2 H H 3 Table 2. Head selection Servo write mode This mode allows for writing to multiple channels at once. To enable servo write mode follow these steps: (1) Place the device in the Read mode. (2) Set HS0 and HS1 following Table 3. (3) Set WUS/SE to VSEH, or input ISEH to WUS/SE. (4) While maintaing step (2) and (3) above make R/W low, placing the device in servo write mode.
--12--
CXA3171N
Write unsafe detection circuit This circuit detects write errors. In normal Write mode, the WUS output is low; in the conditions listed below, it is high. * Head inputs is open (under the condition which. RH= and Write data frequency is 10 MHz) * Head input is shorted to GND or VCC. * Write data frequency is abnormally low. * No write current. * In read mode. * Supply voltage is abnormal (see power supply ON/OFF detection). Power supply ON/OFF detection This circuit monitors VCC to detect erroneous Writes. The error status is established when VCC falls below the threshold voltage (VTH) of the power supply ON/OFF detector, in which case the recording and playback functions are prohibited. When VCC rises above VTH, the prohibition of these functions is released. HS0 HS1 Head L L 0, 1 H L 0, 1, 2, 3 L H 2, 3 H H 0, 1, 2, 3 Table 3. Head selection in Servo Write mode
--13--
CXA3171N
Application Circuit
+5V 1 1 RWC 2.7k 1 5.1k
24
23
22
21
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
9
10
11
12
LH
1H
LH
1H
LH
1H
LH
1H
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
--14--
CXA3171N
Notes on operation * This device handles high frequency and high gain signals. Please note the following; Connect VCC decoupling capacitor of approximately 1000 pF near the device. Make the GND area as large as possible. * When using as 2-channel, short-circuit the X and Y sides of unused head pins or leave them open. * The WC pin is a constant voltage pin. When noise affects this pin, it creates noise in Write c current. Therefore, locate RWC as close to the device as possible. * Write unsafe detection circuit This circuit uses the voltage waveforms of the head pins for detection.
Wave form of write data
Voltage waveform of head pins (HX, HY)
VFB
VTH=1.4V VTH GND
VFB must be more than 2 V. When VFB < 2 V, it is possible that Write unsafe detection maximum frequency becomes more than 1 MHz. The normal operating area of write unsafe detection circuit is changed by head inductance, head DC resistance, write current and other.
--15--
CXA3171N
Application Notes Use the following characteristics for reference. Item Differential output capacitance Differential output resistance Differential input capacitance Read mode Differential input resistance Output resistance Unselected head differential current in Write mode Write mode Write current symmetry TAS=T1-T2 Symbol CO RO CI RI RRD IUS TAS Conditions Between head input pins Between head input pins f=5 MHz RDX or RDY, f=5 MHz LH=1 H, RH=12 IW=20 mA LH=0 H, RH=0 IW=20 mA
VCC=5V, Ta=25 C Min. Typ. Max. 4.5 6 300 420 545 6.7 10 520 1200 2400 50 Unit pF pF
0.2 mAp-p -0.5 0.5 ns
IWX+IWY
50% T1
50% T2
50%
WC
Setting of Write current Write current can be set with resistor RWC (k) at Pin 22. IW=K/RWC (mA) Refer to Fig. 5.
Fig.5 Write current vs. RWC
22 RWC
IW-Write current (mA)
20
10
5 2 5 RWC (k) 10
--16--
CXA3171N
Normalized write current vs. Supply voltage 1.04 Ta=25C RWC=3.3k 1.04
Normalized write current vs. Ambient temperature VCC=5V RWC=3.3k
IW/IW (Ta=25C)
IW/IW (VCC=5V)
1.02
1.02
1
1
0.98
0.98
0.96 4 5 Supply voltage VCC [V] 6
0.96 -25 0 25 50 75
Ambient temperature Ta [C]
Normalized read amplifier voltage tgain vs. Supply voltage 1.04 Ta=25C 1.04
Normalized read amplifier voltage gain vs. Ambient temperature VCC=5V
1
AV/AV (Ta=25C)
AV/AV (VCC=5V)
1.02
1.02
1
0.98
0.98
0.96 4 5 Supply voltage VCC [V] 6
0.96 -25 0 25 50 75
Ambient temperature Ta [C]
Power supply ON/OFF detector threshold voltage vs. Ambient temperature 4.2
Power supply ON/OFF Detector Threshold Voltage [V]
OFF ON 4
ON OFF 3.8
3.6 -25 0 25 50 75 Ambient temperature Ta [C]
--17--
CXA3171N
Package Outline
Unit : mm
24PIN SSOP(PLASTIC)
+ 0.2 1.25 - 0.1 7.8 0.1 0.1 13
24
A
1 + 0.1 0.22 - 0.05
12 + 0.05 0.15 - 0.02 0.65 0.1 0.1
0.13 M
5.6 0.1
0 to 10 NOTE: Dimensions "" does not include mold protrusion. DETAIL A
PACKAGE STRUCTURE
PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE SSOP-24P-L01 SSOP024-P-0056 LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER/PALLADIUM PLATING 42/COPPER ALLOY 0.1g
NOTE : PALLADIUM PLATING This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame).
--18--
0.5 0.2
7.6 0.2

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