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IRF350
Data Sheet March 1999 File Number 1826.3
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA9399.
Features
* 15A, 400V * rDS(ON) = 0.300 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER IRF350 PACKAGE TO-204AA BRAND IRF350
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-204AA TOP VIEW
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
IRF350
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF350 400 400 15 9.0 60 20 150 1.2 700 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Paackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs tD(ON) tr tD(OFF) tf Qg Qgs Qgd CISS COSS CRSS LD Measured Between the Contact Screw on Header that is Closer to Source and Gate Pins and Center of Die Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
TEST CONDITIONS VGS = 0V, ID = 250A, (Figure 10) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V VGS = 10V, ID = 8.0A, (Figures 8, 9) VDS > ID(ON) x rDS(ON)MAX, ID = 8A, (Figure 12) VDD = 180V, ID 8.0A, RG = 4.7, RL = 22.5, VGS = 10V, (Figures 17, 18) MOSFET switching times are essentially independent of operating temperature VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20) Gate charge is essentially independent of operating temperature VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11)
MIN 400 2.0 15 8 -
TYP 0.25 10 79 38 41 2000 400 100 5.0
MAX 4.0 25 250 100 0.300 35 65 150 75 120 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Internal Source Inductance
LS
-
12.5
-
nH
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
RJC RJA Free Air Operation
-
0.83 -
30
oC/W oC/W
2
IRF350
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX 15 60
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 15A, VGS = 0V, (Figure 13) TJ = 150oC, ISD = 15A, dISD/dt = 100A/s TJ = 150oC, ISD = 15A, dISD/dt = 100A/s
-
1000 6.6
1.6 -
V ns C
2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive Rating: Pulse width is limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 40V, starting TJ = 25oC, L = 5.66H, RG = 50, peak IAS = 15A. (Figures 15, 16).
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
20
0.8 0.6 0.4 0.2 0
ID, DRAIN CURRENT (A)
16
12
8
4
0 0 50 100 150 TC, CASE TEMPERATURE (oC)
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
1.0 ZJC, NORMALIZED THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 0.1 10-2 10-3 t1, RECTANGULAR PULSE DURATION (S) PDM t1 t2t2 NOTES: DUTY FACTOR: D = t1/t2 TJ = PD x ZJC x RJC + TC 1 10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
IRF350 Typical Performance Curves
100
Unless Otherwise Specified (Continued)
20 VGS = 6.0V PULSE DURATION = 80s VGS = 5.5V ID, DRAIN CURRENT (A) 16
ID, DRAIN CURRENT (A)
10s 100s 10 1ms
12
VGS = 5.0V
1
OPERATION IN THIS REGION IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE
10ms 100ms
8
VGS = 4.5V VGS = 4.0V VGS = 3.5V
DC
4
0.1 1.0 2 20 50 100 200 5 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 500
0
0
50
100 150 200 250 VDS, DRAIN TO SOURCE VOLTAGE (V)
300
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
PULSE DURATION = 80s 8 VGS = 10V VGS = 5.0V VGS = 4.5V 6
IDS(ON), DRAIN TO SOURCE CURRENT (A)
10
12 VDS > ID(ON) x rDS(ON)MAX PULSE DURATION = 80s 10 8 6 4 TJ = 125oC TJ = 25oC TJ = -55oC 2 0 0
ID, DRAIN CURRENT (A)
4
VGS = 4.0V
2 VGS = 3.5V 0
0
1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V)
5
1
4 5 6 2 3 VGS, GATE TO SOURCE VOLTAGE (V)
7
8
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0 10 40 20 50 30 ID, DRAIN CURRENT (A) 60 70 rDS(ON) MEASURED WITH CURRENT PULSE OF 2.0s DURATION. INITIAL TJ = 25oC. (HEATING EFFECT OF 2.0s PULSE IS MINIMAL) VGS = 10V VGS = 20V NORMALIZED DRAIN TO SOURCE ON RESISTANCE
2.2
ID = 8A VGS = 10V
rDS(ON), DRAIN TO SOURCE ON RESISTANCE ()
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
4
IRF350 Typical Performance Curves
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
Unless Otherwise Specified (Continued)
4000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1.15 C, CAPACITANCE (pF)
3200
1.05
2400
CISS
0.95
1600 COSS 800 CRSS
0.85
0.75 -40
0
40
80
120
160
0
TJ, JUNCTION TEMPERATURE (oC)
0
10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20 ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) VDS > ID(ON) x rDS(ON)MAX PULSE DURATION = 80s 16 TJ = 25oC 12 TJ = 125oC TJ = -55oC
2 102 TJ = 25oC TJ = 150oC
8
10
TJ = 150oC
TJ = 25oC
4
0
0
4
8 12 ID, DRAIN CURRENT (A)
16
20
1
0
1 2 3 VSD, SOURCE TO DRAIN VOLTAGE (V)
4
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 18A 15 VDS = 80V VDS = 200V 10 VDS = 320V
5
0 0 28 56 84 112 140 Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
IRF350 Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL VDS
+
tOFF td(OFF) tf 90%
90%
RG DUT
-
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
VDS (ISOLATED SUPPLY)
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
G
DUT 0
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
6
IRF350
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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