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Advance Product Information
November 9, 2004
Ku Band 6.5 W Power Amplifier
Key Features
* * * * * * * * * * *
TGA2514-EPU
Frequency Range: 13 - 18 GHz 38.5 dBm Nominal Psat from 13.75 - 14 GHz 38 dBm Nominal Psat from 13-16 GHz 37.5 dBm Nominal Psat from 16-18 GHz 33 dBc IMD3 @ 27 dBm Pout/tone @ 14 GHz 24 dB Nominal Gain 12 dB Nominal Return Loss 0.25-m 3MI pHEMT Technology Bias Conditions: 8 V @ 2.6 A Idq Chip size: 2.87 x 3.90 x .10 mm (0.113 x 0.154 x 0.004)
Primary Applications Product Description
The TriQuint TGA2514-EPU is a compact 6.5 W Ku-band Power Amplifier which operates from 13-18 GHz. The TGA2514-EPU is designed using TriQuint's proven standard 0.25-m gate pHEMT production process. The TGA2514-EPU provides a nominal 38 dBm of saturated power with a small signal gain of 24 dB. Typical return loss is 14 dB. The TGA2514-EPU is 100% DC and RF tested on-wafer to ensure performance compliance.
Psat (dBm)
* *
Ku band VSAT Transmitter Point to Point Radio Measured Fixtured Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 8
40 39 38 37 36 35 34 33 32 31 30 29 28 12 13 14 15 16 17 18 19 20
10
12
14
16
18
20
22
Frequency (GHz)
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28
Gain (dB)
Advance Product Information
November 9, 2004
TABLE I MAXIMUM RATINGS
Symbol V I
+ -
TGA2514-EPU
Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value 9V -5V TO 0V 4A 113 mA 30.3 dBm 20.8 W 150 C 320 C -65 to 150 C
0 0 0
Notes 2/ 2/ 2/ 2/, 3/ 4/, 5/
V
+
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70 C, the median life is 1E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
0
5/
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (Vd = 8V, Id = 2.6 A) SYMBOL PARAMETER TEST CONDITION f = 13-18 GHz TYPICAL
TGA2514-EPU
UNITS
Gain
Small Signal Gain
24
dB
IRL
Input Return Loss
f = 13-18 GHz
12
dB
ORL
Output Return Loss
f = 13-18 GHz
12
dB
Psat
Saturated Power
f = 13-16 GHz f = 16-18 GHz
38 37.5
dBm
TOI
Third Order Intercept @ Pout/tone = 27dBm Output IMD3 @ Pout/tone = 27 dBm
f = 14 GHz
44
dBm
IMD3
f = 14 GHz
33
dBc
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TABLE III THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 8 V ID = 2.6 A Pdiss = 20.8 W TCH (oC) 150 RTJC (qC/W) 3.9 TM (HRS) 1 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
Measured Fixture Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
TGA2514-EPU
8
40 39
10
12
14
16
18
20
22
Frequency (GHz)
Output Power (dBm)
38 37 36 35 34 33 32 31 30 29 28 12 13 14 15 16 17 18 19 20 P1dB Psat
Frequency (GHz)
Return Loss (dB)
4
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28
28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Gain (dB)
Advance Product Information
November 9, 2004
Measured Fixture Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
40
TGA2514-EPU
35
30
25
13 GHz 13.5 GHz 14 GHz 14.5 GHz 15 GHz 15.5 GHz 16 GHz 16.5 GHz 17 GHz 17.5 GHz 18 GHz
Pout(dBm)
20 4 6 8 10 12 14 16 18 20
Pin (dBm)
4 3.8
Drain Current (A)
3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 4 6 8 10 12 14 16 18 20
13GHz 13.5 GHz 14 GHz 14.5 GHz 15GHz 15.5GHz 16 GHz 16.5GHz 17 Ghz 17.5 GHz 18 GHz
Pin (dBm)
26
13GHz 13.5 GHz 14 GHz 14.5 GHz
24
Power Gain (dB)
22
15GHz 15.5GHz
20
16 GHz 16.5GHz 17 Ghz
18
17.5 GHz 18 GHz
16 4 6 8 10 12 14 16 18 20
Pin (dBm)
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
TGA2514-EPU
Measured Fixture Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
50 48 46 44
13 GHz 13.5 GHz 14 GHz 14.5GHz 15 GHz 15.5 GHz 16 GHz 16.5 GHz 17 GHz 17.5 GHz 18 GHz
TOI (dBm)
42 40 38 36 34 32 30 12 14 16 18 20 22 24 26 28 30 32
Output Power/Tone (dBm)
60 50 40 30 20 10 0 12 14 16 18 20 22 24 26 28 30 32
13 GHz 13.5 GHz 14 GHz 14.5GHz 15 GHz 15.5 GHz 16 GHz 16.5 GHz 17 GHz 17.5 GHz 18 GHz
IMD3 (dBc)
Output Power/Tone (dBm)
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
TGA2514-EPU
Recommended Chip Assembly Diagram
10 : 1 PF
Vg
Vd
1 PF
20 mil ribbon
10 : 1 PF
Vg
Vd
1 PF
Notes: 1. Vg can be connected from either side, but 100 pf, 0.01 uf , 1uf caps and 10 ohm resistor are needed for both sides. 2. Vd connection must be biased from both sides.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
TGA2514-EPU
Mechanical Drawing
2.358 (0.093) 0.722 (0.028) 1.113 (0.044) 2.732 (0.108)
3.903 (0.154) 3.748 (0.148)
3.742 (0.147) 2 3 4
2.764 (0.109) 5
1.136 (0.045) 1
0.148 (0.006) 8 0.000 (0.000) 2.358 (0.093) 0.000 (0.000) 0.142 (0.006) 0.722 (0.028) 1.113 (0.044) 2.872 (0.113) 7 6
0.161 (0.006)
Units: Millimeters (inches) Thickness: 0.100 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size +/- 0.05 (0.002) GND IS BACKSIDE OF MMIC
Bond pad #1 Bond pads #2, 8 Bond pads #3, 7 Bond pads # 4, 6 Bond pad #5
RF Input Vg Vd Vd RF Output
0.096 x 0.200 (0.004 x 0.008) 0.098 x 0.098 (0.004 x 0.004) 0.198 x 0.100 (0.008 x 0.004) 0.296 x 0.178 (0.012 x 0.007) 0.096 x 0.200 (0.004 x 0.008)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
TGA2514-EPU Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

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