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| SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2195 (FP15W50VX2) 500V 15A FEATURES Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: E-pack Case ITO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings Tc = 25 Item Symbol Conditions Storage Temperature Tstg Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentDC IDP Continuous Drain CurrentPeak) Continuous Source CurrentDC IS Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR Recommended torque : 0.5Nm Mounting Torque Ratings -55150 150 500 30 15 45 15 60 15 2 0.8 Unit V A W A kV Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss ton Turn-On Time toff Turn-Off Time Conditions 2SK2195 ( FP15W50VX2 ) Min. 500 Typ. Max. 250 0.1 4.5 2.5 10 0.35 3.0 Unit V A ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V ID = 7.5A, VDS = 10V ID = 7.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 7.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 15A VDS = 10V, VGS = 0V, f = 1MHZ ID = 7.5A, VGS = 10V, RL = 20 65 1900 135 400 110 270 S 0.45 3.5 V 1.5 2.08 / nC pF 180 440 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2195 30 Tc = -55C 25 Transfer Characteristics 25C 100C Drain Current ID [A] 20 150C 15 10 5 0 VDS = 25V pulse test TYP 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2195 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 1 ID = 7.5A 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2195 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2195 100 Safe Operating Area 10 100s 200s Drain Current ID [A] R DS(ON) limit 1 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2195 Transient Thermal Impedance 100 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-5 10-3 10-4 10-2 10-1 100 101 102 Time t [s] 2SK2195 10000 Capacitance Ciss Capacitance Ciss Coss Crss [pF] 1000 Coss 100 Crss Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2195 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2195 500 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 400V 200V 300 100V 10 200 VGS 5 100 ID = 15A 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 VDS |
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