|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitive TC = 25C Maximum Ratings 600 600 20 30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W C C C C g g TO-247AD (IXSH) G C E TO-268 (D3) (IXST) G E C TO-264 (IXSK) G C E C = Collector TAB = Collector G = Gate E = Emitter Mounting torque 1.13/10 Nm/lb.in. 300 TO-247/TO-268 TO-264 6/4 10 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight Features * International standard packages: JEDEC TO-247, TO-264& TO-268 * Short Circuit SOA capability * Medium freqeuncy IGBT and antiparallel FRED in one package * New generation HDMOSTM process Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw (isolated mounting screw hole) * Surface mountable, high power case style * Reduces assembly time and cost * High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 7 200 3 100 IC = IC90 IC = IC25 2.0 2.7 V V mA mA nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 750 mA, VGE = 0 V = 2.5 mA, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 98517A (7/00) (c) 2000 IXYS All rights reserved 1-5 IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 3100 240 30 100 30 38 30 30 150 140 1.5 30 35 0.5 270 250 2.5 TO-247 TO-264 0.25 0.15 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 K/W K/W K/W TO-247 AD (IXSH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1. Inductive load, TJ = 125C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1 Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 270 270 2.5 1.5 2.49 TO-264 AA (IXSK) Outline Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = IC90, VGE = 0 V Note 2 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150 C TJ = 25 C 2 35 1.7 2.5 2.5 50 V V A ns Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IF = 50A; VGE = 0 V; TJ = 100 C VR = 100 V; -diF/dt = 100 A/ms IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25C .09 K/W Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. 2. Pulse test, t 300 ms, duty cycle d 2 % TO-268AA (IXST) (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Fig.1 Saturation Characteristics 100 TJ = 25C Fig.2 Output Characterstics 200 TJ = 25C VGE = 15V VGE = 15V 13V 11V 13V 80 160 IC - Amperes IC - Amperes 11V 9V 60 40 9V 120 80 7V 20 7V 40 5V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 VCE - Volts VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 120 TJ = 125C VGS=15V 13V Fig.4 Temperature Dependence of Output Saturation Voltage 1.6 VGE = 15V IC = 60A 80 60 40 20 11V VCE (sat) - Normalized 100 1.4 1.2 IC = 30A IC - Amperes 1.0 IC = 15A 9V 0.8 0.6 7V 0 0 2 4 6 8 10 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Fig.5 Input Admittance Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 10000 f = 1Mhz 140 120 VCE = 10V Capacitance - pF IC - Amperes 100 80 60 40 20 0 4 6 8 10 12 14 16 TJ = 125C TJ = 25C 1000 Ciss 100 Coss Crss 10 0 5 10 15 20 25 30 35 40 VGE - Volts VCE-Volts (c) 2000 IXYS All rights reserved 3-5 IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 7.5 2.0 TJ = 125C E(OFF) IC = 60A 1.5 TJ = 125C 8 RG = 10 E(OFF) - milliJoules E(ON) - millijoules E(ON) - millijoules 1.5 1.0 E(ON) 5.0 E(OFF) E(ON) 6 E(OFF) - millijoules 1.0 IC = 30A E(ON) E(OFF) 4 0.5 2.5 0.5 E(ON) IC = 15A E(OFF) 2 0.0 0 20 40 60 0.0 80 0.0 0 0 10 20 30 40 50 IC - Amperes RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 12 IC =30A VCE = 300V Fig.10 Turn-Off Safe Operating Area 100 IC - Amperes VGE - Volts 10 TJ = 125C 9 6 3 0 0 25 50 75 100 125 RG = 4.7 dV/dt < 5V/ns 1 0.1 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Fig.11 Transient Thermal Resistance 1 D=0.5 D=0.2 ZthJC (K/W) 0.1 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-5 IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 60 A 50 IF 40 1000 nC 800 Qr TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A IRM 30 A 25 20 15 TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A TVJ=150C 30 600 TVJ=100C 20 400 10 TVJ=25C 10 0 0 1 2 VF 3V 200 5 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 0 100 Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 14 Peak reverse current IRM versus -diF/dt 20 2.0 TVJ= 100C VR = 300V TVJ= 100C V IF = 30A V FR tfr 1.00 s tfr 0.75 1.5 Kf 1.0 trr 80 VFR 15 I RM 70 0.5 IF= 60A IF= 30A IF= 15A 10 0.50 5 0.25 Qr 0.0 0 40 80 120 C 160 TVJ 60 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.00 600 A/ms 1000 800 diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 16 Recovery time trr versus -diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162 0.1 ZthJC 1 2 3 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 18 Transient thermal resistance junction to case (c) 2000 IXYS All rights reserved 5-5 |
Price & Availability of IXSK30N60BD1 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |