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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA KTC4526 TRIPLE DIFFUSED NPN TRANSISTOR A R S E F D P MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC IC IB PC Tj Tstg RATING 1100 800 7 1.5 5 0.8 40 150 -55 150 UNIT V H Q T V A A W L C C M K M J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaning Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Output Capacitance Transition Frequency Turn On Time Switching Time Storage Time Fall Time Note : hFE (1) Classification R:15 30, O:20 ICBO IEBO VCEX(SUS) VCE(sat) VBE(sat) ) TEST CONDITION VCB=800V, IE=0 VEB=5V, IC=0 IC=0.75A, IB1=-IB2=0.15A L=5mH, Clamped IC=0.75A, IB=0.15A IC=0.75A, IB=0.15A VCE=5V, IC=0.1A VCE=5V, IC=0.5A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 VCB=10V, f=1MHz, IE=0 VCE=10V, IC=0.1A OUTPUT 20S IB1 INPUT IB2 I B1 400 I B2 SYMBOL MIN. 800 15 8 1100 800 7 - O 1 2 3 N G V DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ 3.60 + 0.20 3.00 6.70 MAX _ 13.60 + 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 9.50 + 0.20 _ 8.00 + 0.20 2.90 MAX B TYP. 35 15 - MAX. 10 10 2 1.5 40 0.5 3 0.3 UNIT A A V V V hFE (1) (Note) hFE (2) V(BR)CBO V(BR)CEO V(BR)EBO Cob fT ton tstg tf 40 V V V pF MHz S I B1 =0.2A , I B2 =-0.4A < DUTY CYCLE = 1% VCC =400V 2000. 4. 10 Revision No : 0 1/3 KTC4526 IC 1.2 COLLECTOR CURRENT I C (A) VCE 100 I B =100mA I B =80mA I =60mA B h FE I B =120mA - IC VCE =5V DC CURRENT GAIN h FE 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 50 30 I B =40mA 10 5 3 I B =20mA I B =10mA I B =5mA I B =0mA 8 9 10 1 0.01 0.03 0.1 1 0.3 2 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) , VBE(sat) - I C COLLECTOR CURRENT IC (A) 5 3 SATURATION VOLTAGE VCE(sat) , VBE(sat) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01 0.03 0.1 0.3 1 2 COLLECTOR CURRENT I C (A) VCE(sat) I C =5.I B VBE(sat) I C - V BE 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VCE =5V BASE EMITTER VOLTAGE V BE (V) SAFE OPERATING AREA SWITCHING CHARACTERISTICS 10 COLLECTOR CURRENT I C (A) 5 3 Switching Time (S) 1 0.5 0.3 0.1 0.05 0.03 0.1 t stg t on tf 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 1 I C MAX(PULSE)* S 0 10 I C MAX(CONTINUOUS) * 1m 0.3 0.5 1 3 5 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE DC S* N 10m IO AT ER OP S* COLLECTOR CURRENT I C (A) 2 5 10 20 50 100 200 500 1K COLLECTOR-EMITTER VOLTAGE V CE (V) 2000. 4. 10 Revision No : 0 2/3 KTC4526 REVERSE BIAS SAFE OPERATING AREA I B 2=-0.15A Pc - Ta COLLECTOR POWER DISSIPATION Pc (W) 50 Tc=Ta INFINITE HEAT SINK 100 50 COLLECTOR CURRENT I C (A) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 10 40 30 20 10 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATIURE Ta ( C) 20 50 100 200 500 1K 2K 5K 10K COLLECTOR EMITTER VOLTAGE VCE (V) 2000. 4. 10 Revision No : 0 3/3 |
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