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 LH53517
FEATURES * 65,536 words x 8 bit organization * Access time: 150 ns (MAX.) * Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 W (MAX.) * Static operation * TTL compatible I/O * Three-state outputs * Single +5 V power supply * Mask-programmable OE/OE * Packages: 28-pin, 600-mil DIP 28-pin, 450-mil SOP 28-pin, 8 x 13.4 mm2 TSOP (Type I) DESCRIPTION
The LH53517 is a mask-programmable ROM organized as 65,536 x 8 bits. It is fabricated using silicon-gate CMOS process technology.
28-PIN DIP 28-PIN SOP
CMOS 512K (64K x 8) MROM
PIN CONNECTIONS
TOP VIEW
A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC A14 A13 A8 A9 A11 OE/OE A10 CE D7 D6 D5 D4 D3
53517-1
Figure 1. Pin Connections for DIP and SOP Packages
28-PIN TSOP (Type I)
TOP VIEW
OE/OE A11 A9 A8 A13 A14 VCC A15 A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A10 CE D7 D6 D5 D4 D3 GND D2 D1 D0 A0 A1 A2
NOTE: Reverse bend available on request.
53517-2
Figure 2. Pin Connections for TSOP Package
1
LH53517
CMOS 512K MROM
A8 25 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10
ADDRESS DECODER
ADDRESS BUFFER
A15 1 A14 27 A13 26 A12 2 A11 23 A10 21 A9 24
MEMORY MATRIX (65,536 x 8)
COLUMN SELECTOR
SENSE AMPLIFIER
CE 20
CE BUFFER
TIMING GENERATOR DATA OUTPUT BUFFER
OE/OE 22
OE BUFFER
28 14 VCC GND NOTE: Pin numbers apply to the 28-pin DIP or SOP.
19 D7
18 D6
17 D5
16 D4
15 D3
13 D2
12 D1
11 D0
53517-3
Figure 3. LH53517 Block Diagram
PIN DESCRIPTION
SIGNAL PIN NAME NOTE SIGNAL PIN NAME NOTE
A0 - A15 D0 - D7 CE
Address input Data output Chip enable input
OE/OE VCC GND
Output enable input Power supply (+5 V) Ground
1
NOTE: 1. Active level of OE/OE is mask-programmable.
TRUTH TABLE
CE OE/OE DATA OUTPUT CURRENT CONSUMPTION
H L
NOTE: X = H or L
X L/H H/L
High-Z Output
Standby Operating
ABSOLUTE MAXIMUM RATINGS
2
CMOS 512K MROM
LH53517
PARAMETER
SYMBOL
RATING
UNIT
Supply voltage Input voltage Output voltage Operating temperature Storage temperature
VCC VIN VOUT Topr Tstg
-0.3 to +7.0 -0.3 to VCC + 0.3 -0.3 to VCC + 0.3 0 to +70 -65 to +150
V V V C C
RECOMMENDED OPERATING CONDITIONS (TA = 0 to +70C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Supply voltage
VCC
4.5
5.0
5.5
V
DC CHARACTERISTICS (VCC = 5 V 10%, TA = 0 to +70C)
PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT NOTE
Input `Low' voltage Input `High' voltage Output `Low' voltage Output `High' voltage Input leakage current Output leakage current
VIL VIH VOL VOH | ILI | | ILO | ICC1 ICC2 ICC3 ICC4 ISB1 ISB2 CIN COUT I OL = 1.6 mA I OH = -400 A V IN = 0 V to VCC V OUT = 0 V to VCC t RC = 150 ns t RC = 1 s t RC = 150 ns t RC = 1 s CE = V IH CE = V CC - 0.2 V f = 1 MHz T A = 25C
-0.3 2.2 2.4
0.8 VCC + 0.3 0.4 10 10 30 15 25 12 2 100 10 10
V V V V A A mA mA mA A pF pF 1 2 3
Operating current
Standby current Input capacitance Output capacitance
NOTES: 1. CE/OE = VIH , OE = VIL 2. VIN = VIH/VIL, CE = VIL, outputs open 3. VIN = (VCC - 0.2 V), 0.2 V, CE = 0.2 V, outputs open
AC CHARACTERISTICS (VCC = 5 V 10%, TA = 0 to +70C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Read cycle time Address access time Chip enable access time Output enable delay time Output hold time CE to output in High-Z OE to output in High-Z
tRC tAA tACE tOE tOH tCHZ tOHZ
150 150 150 10 5 70 70 80
ns ns ns ns ns ns ns 1 1
NOTE: 1. This is the time required for the output to become high-impedance.
3
LH53517
CMOS 512K MROM
AC TEST CONDITIONS
PARAMETER RATING
Input voltage amplitude Input rise/fall time Input reference level Output reference level Output load condition
0.6 V to 2.4 V 10 ns 1.5 V 0.8 V and 2.2 V 1TTL + 100 pF
CAUTION
To stabilize the power supply, it is recommended that a high-frequency bypass capacitor be connected between the V CC pin and the GND pin.
tRC
A0 - A15 tAA (NOTE)
CE tACE (NOTE) OE OE tOE (NOTE) tOHZ tCHZ
D0 - D7
DATA VALID tOH
NOTE: Data becomes valid after the intervals tAA, tACE, and tOE from address input, chip enable, and output enable, respectively have been met.
53517-4
Figure 4. Timing Diagram
4
CMOS 512K MROM
LH53517
PACKAGE DIAGRAMS
28DIP (DIP028-P-0600)
28 15
DETAIL
13.45 [0.530] 12.95 [0.510]
1 36.30 [1.429] 35.70 [1.406]
14
0 TO 15 0.30 [0.012] 0.20 [0.008] 15.24 [0.600] TYP.
4.50 [0.177] 4.00 [0.157] 5.20 [0.205] 5.00 [0.197] 3.50 [0.138] 3.00 [0.118] 2.54 [0.100] TYP. 0.60 [0.024] 0.40 [0.016] MAXIMUM LIMIT MINIMUM LIMIT 0.51 [0.020] MIN.
DIMENSIONS IN MM [INCHES]
28DIP-2
28-pin, 600-mil DIP
28SOP (SOP028-P-0450)
1.27 [0.050] TYP. 1.70 [0.067] 15 8.80 [0.346] 8.40 [0.331] 12.40 [0.488] 11.60 [0.457]
0.50 [0.020] 0.30 [0.012]
28
10.60 [0.417]
1 18.20 [0.717] 17.80 [0.701]
14 1.70 [0.067] 0.20 [0.008] 0.10 [0.004] 0.15 [0.006] 1.025 [0.040] 2.40 [0.094] 2.00 [0.079] 0.20 [0.008] 0.00 [0.000] 1.025 [0.040]
DIMENSIONS IN MM [INCHES]
MAXIMUM LIMIT MINIMUM LIMIT
28SOP
28-pin, 450-mil SOP
5
LH53517
CMOS 512K MROM
28TSOP (TSOP028-P-0813)
0.28 [0.011] 0.12 [0.005] 28 0.55 [0.022] TYP. 15
12.00 [0.472] 11.60 [0.457]
13.70 [0.539] 13.10 [0.516]
12.60 [0.496] 12.20 [0.480]
1 8.20 [0.323] 7.80 [0.307]
14 0.20 [0.008] 0.10 [0.004] 0.15 [0.006] 1.10 [0.043] 0.90 [0.035] 1.20 [0.047] MAX. 0.425 [0.017] 0.20 [0.008] 0.00 [0.000] 0.425 [0.017] 1.10 [0.043] 0.90 [0.035] 0.20 [0.008] 0.00 [0.000]
28TSOP
DETAIL
0 - 10
DIMENSIONS IN MM [INCHES]
MAXIMUM LIMIT MINIMUM LIMIT
28-pin, 8 x 13 mm2 TSOP (Type I)
ORDERING INFORMATION
LH53517 Device Type X Package
D N T TR
28-pin, 600-mil DIP (DIP028-P-0600) 28-pin, 450-mil SOP (SOP028-P-0450) 28-pin, 8 x 13.4 mm2 TSOP (Type I) (TSOP028-P-0813) 28-pin, 8 x 13 mm2 TSOP (Type I) Reverse bend (TSOP028-P-0813)
CMOS 512K (64K x 8) Mask Programmable ROM Example: LH53517D (CMOS 512K (64K x 8) Mask Programmable ROM, 28-pin, 600-mil DIP)
53517-5
6


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