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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc * Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage * Excellent DC Current Gain -- hFE = 20 (min) at IC = 10 Adc * High Current Gain Bandwidth Product -- f = 4.0 MHz (min) at IC = 1.0 Adc MAXIMUM RATINGS (1) Rating 2N5883 2N5884* NPN 2N5885 2N5886* *Motorola Preferred Device PNP PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB VEB IC IB 2N5883 2N5885 60 60 2N5884 2N5886 80 80 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 25 50 Collector Current -- Continuous Peak Base Current 7.5 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 200 1.15 Watts W/_C TJ, Tstg - 65 to + 200 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 VOLTS 200 WATTS _C CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case JC 0.875 _C/W (1) Indicates JEDEC registered data. Units and conditions differ on some parameters and re-registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N5883 2N5884 2N5885 2N5886 * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS TURN-ON TIME tr 20 ns DC Current Gain (1) (IC = 3.0 Adc, VCE = 4.0 Vdc) DC Current Gain (1) (IC = 10 Adc, VCE = 4.0 Vdc) DC Current Gain (1) (IC = 25 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC = 15 Adc, IB = 1.5 Adc) Collector-Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 6.25 Adc) Base-Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 6.25 Adc) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) Fall Time Storage Time Rise Time Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz) Current-Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Output Capacitance 2N5883, 2N5884 (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5885, 2N5886 Base-Emitter On Voltage (1) (IC = 10 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 0 + 2.0 V DUTY CYCLE 2.0% -11 V 10 to 100 s v Characteristic RB 10 VCC (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) RL VCC v 2.0%. 3.0 - 30 V TO SCOPE tr 20 ns - 30 V t, TIME ( s) TURN-OFF TIME -11 V 2 Figure 2. Switching Time Equivalent Test Circuits 0 DUTY CYCLE 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. tr 20 ns 10 to 100 s +9.0 V RB 10 VBB + 7.0 V RL 3.0 TO SCOPE tr 20 ns (2) fT = |hfe| * ftest. 0.03 0.02 0.3 0.07 0.05 0.7 0.5 0.2 1.0 2.0 0.1 0.3 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5984, 2N5886 Motorola Bipolar Power Transistor Device Data 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol ICBO ICEO IEBO ICEX fT Cob hFE hfe tr ts tf td tr Min 4.0 35 20 4.0 20 60 80 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1000 500 Max -- 100 0.8 1.0 0.7 1.5 2.5 1.0 4.0 1.0 1.0 1.0 1.0 1.0 10 10 2.0 2.0 -- -- -- -- Figure 3. Turn-On Time 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) mAdc mAdc mAdc mAdc 20 MHz Unit Vdc Vdc Vdc Vdc pF s s s -- -- 30 2N5883 2N5884 2N5885 2N5886 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.02 0.01 0.02 SINGLE PULSE P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 1.0 dc 1 ms 5 ms 500 s TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5883, 2N5885 2N5884, 2N5886 2.0 3.0 20 30 50 70 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPERES) v Figure 5. Active-Region Safe Operating Area 10 7.0 5.0 3.0 t, TIME ( s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.3 3000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) ts ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 2000 C, CAPACITANCE (pF) Cob Cib 1000 700 500 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 20 30 300 0.1 0.2 Cob 50 100 Cib tf tf 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N5883 2N5884 2N5885 2N5886 PNP DEVICES 2N5883 and 2N5884 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.3 25C - 55C 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.3 25C NPN DEVICES 2N5885 and 2N5886 TJ = 150C VCE = 4.0 V VCE = 4.0 V TJ = 150C - 55C 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) 20 30 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 2.0 A 1.2 5.0 A 10 A 20 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 2.0 A 1.2 5.0 A 10 A 20 A 0.8 0.8 0.4 0.4 0 0.01 0.02 0.05 0.1 0.5 0.2 1.0 2.0 IB, BASE CURRENT (AMPERES) 5.0 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPERES) 5.0 10 Figure 9. Collector Saturation Region 2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.8 0.8 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) Figure 10. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data 2N5883 2N5884 2N5885 2N5886 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N5883 2N5884 2N5885 2N5886 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N5883/D* 2N5883/D |
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