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| BAT240A Silicon Schottky Diode Rectifier Schottky diode for telecommunication and industrial applications High reverse voltage For power supply For clamping and protection in high voltage applications 3 Total power dissipation, TS = 28 C Junction temperature Storage temperature Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Junction - soldering point1) 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT240A Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Marking 4Ms 1=C1/A2 Pin Configuration 2 = C2 3 = A1 Package SOT23 Symbol VR VRM IF 10ms) IFSM Ptot Tj Tstg Value 240 250 400 1 400 80 -55 ... 150 Unit V mA A mW C Surge forward current (t RthJS 305 K/W Jul-06-2001 BAT240A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) = 500 A Reverse current VR = 200 V VR = 240 Forward voltage IF = 10 mA IF = 20 mA IF = 50 mA VF 0.325 0.37 0.47 IR 5 500 V A V(BR) 240 V Symbol min. Values typ. max. Unit AC characteristics Diode capacitance VR = 10 V, f = 1 MHz CT 11.5 pF 2 Jul-06-2001 BAT240A Forward current IF = f (TS ) Forward current IF = f (VF ) TA = parameter 500 mA 10 -1 A 400 350 10 -2 IF 300 250 200 IF 10 -3 150 100 50 0 0 120 C 10 -4 0.00 80C 65C 45C 25C -40C 20 40 60 80 100 150 0.10 0.20 0.30 0.40 V 0.60 TS VF Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 K/W 10 3 - 10 2 IFmax / IFDC 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Jul-06-2001 BAT240A Derating curve reverse voltage VR = f(TA ); tp = Parameter Duty cycle < 0.01 300 V DC tp=300s tp=100ms VR 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TA 4 Jul-06-2001 |
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