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| Ordering number:ENN6429 N-Channel Silicon MOSFET FTD2005 Ultrahigh-Speed Switching Applications Features * Low ON resistance. * 2.5V drive. * Mounting height 1.1mm. * Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2005] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Conditions Ratings 20 10 1 4 0.8 1.0 150 -55 to +150 Unit V V A A W W Mounted on a ceramic board (1000mm2x0.8mm) 1unit Mounted on a ceramic board (1000mm2x0.8mm) 0.1 Specifications 1.0 0.5 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 1.8 2.6 200 260 90 60 28 260 360 Conditions Ratings min 20 10 10 1.3 typ max Unit V A A V S m m pF pF pF Marking : D2005 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2054 No.6429-1/4 FTD2005 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD IS=1A, VGS=0 VDS=10V, VGS=10V, ID=1A Conditions See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit Ratings min typ 10 22 20 19 6 1 2 1.0 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=10V 4V 0V VIN VIN Electrical Connection D2 S2 S2 G2 ID=1A RL=10 PW=10s D.C.1% D G VOUT P.G 50 S FTD2005 D1 S1 S1 G1 2.0 1.8 1.6 ID -- VDS 8.0V 2.0 1.8 ID -- VGS VDS=10V V 3. 0V 6.0V 4.0 Drain Current, ID - A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 0V 2.5 2.0V Drain Current, ID - A V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10. VGS=1.5V 25 0 0.5 C 1.0 75 C Ta= --25 C 1.5 2.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.5 3.0 IT00978 Drain-to-Source Voltage, VDS - V 500 IT00977 500 Gate-to-Source Voltage, VGS - V RDS(on) -- VGS Ta=25C RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) - m 400 350 Static Drain-to-Source On-State Resistance, RDS(on) - m 450 450 400 350 300 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 1.0A 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 ID=0.5A V =2.5 , VGS 0.5A V I D= =4.0 , VGS 1.0A I D= Gate-to-Source Voltage, VGS - V IT00979 Ambient Temperature, Ta - C IT00980 No.6429-2/4 FTD2005 10 yfs -- ID VDS=10V Forward Transfer Admittance, | yfs | - S 7 5 10 7 5 3 2 IF -- VSD VGS = 0 Forward Current, IF - A 3 2 2 5C 1.0 7 5 3 2 = Ta 5 --2 C 1.0 7 5 3 2 0.1 7 5 3 2 75 C Ta=7 5 C 2 5 C 0 0.3 0.6 0.1 0.01 0.001 2 3 5 Drain Current, ID - A 7 0.1 2 3 5 7 1.0 2 3 --25 0.9 0.01 7 5 3 2 C 1.2 1.5 IT00982 IT00981 1000 Diode Forward Voltage, VSD - V 100 7 SW Time -- ID VDD=10V VGS=4V tr td(off) td(on) Ciss, Coss, Crss -- VDS f=1MHz 7 5 Switching Time, SW Time - ns 5 3 2 tf Ciss, Coss, Crss - pF 3 2 10 7 5 3 2 100 7 5 3 2 Ciss Coss Crss 1.0 0.1 2 3 5 7 10 Drain Current, ID - A 1.0 2 3 IT00983 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS - V IT00984 10 9 VGS -- Qg VDS=10V ID=1A Drain Current, ID - A ASO IDP=4A 10 Gate-to-Source Voltage, VGS - V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT00985 ID=1A DC op 10 1m ms s 100s 0m s era tio n Operation in this area is limited by RDS(on). Ta=25C Single pulse 1 unit 2 3 Total Gate Charge, Qg - nC 1.2 0.01 0.1 Mounted on a ceramic board (1000mm2x0.8mm) 5 Drain-to-Source Voltage, VDS - V 7 1.0 2 3 5 7 10 2 3 5 IT00986 Mounted on a ceramic board (1000mm2x0.8mm) Allowable Power Dissipation (FET1), PD - W PD -- Ta 1.0 PD(FET1) -- PD(FET2) M ou Allowable Power Dissipation, PD - W 1.0 0.8 nte do 0.8 To na tal ce Di 0.6 ram 0.6 ss ic ip bo 1u 0.4 ati ard on (1 nit 0.4 00 0m 0.2 0.2 m2 x0 .8m m) 0 0 20 0 0 0.2 0.4 0.6 0.8 1.0 Ambient Temperature, Ta - C 40 60 80 100 120 140 160 IT00987 Allowable Power Dissipation (FET2), PD - W IT00988 No.6429-3/4 FTD2005 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6429-4/4 |
Price & Availability of FTD2005
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