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| Preliminary Data Sheet PD-20486 rev. A 04/01 UFB200FA40 Ultrafast Soft Recovery Diode Features * * * * Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly VR = 400V VF(typ.) = 1.0V IF(AV) = 200A Description The dual diode series configuration (UFB200FA40) is used for output rectification or frewheeling/ clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, HF welders, motor control and inverters. Absolute Maximum Ratings Parameters VR IF IFSM IFRM VISOL TJ, TSTG Cathode-to-Anode Voltage Continuous Forward Current, TC = 100C Single Pulse Forward Current, TC = 25C Maximum Repetitive Forward Current Max. Power Dissipation, TC @ 90C Operating Junction and Storage Temperatures Per Leg Per Leg Per Leg Per Module Max 400 100 1300 260 240 2500 - 55 to 150 Units V A W V C RMS Isolation Voltage, Any Terminal to Case, t = 1 min Case Styles UFB200FA40 1 4 2 3 SOT-227 www.irf.com 1 UFB200FA40 Preliminary Data Sheet PD-20486 rev. A 04/01 Electrical Characteristics @ TJ = 25C (unless otherwise specified) per diode Parameters VBR VFM Cathode Anode Breakdown Voltage Forward Voltage Min Typ Max Units Test Conditions 400 100 1.2 1.0 50 4 V V V A mA pF IR = 100A IF = 100A IF = 100A, TJ = 150C VR = VR Rated TJ = 150C, VR = VR Rated VR = 400V IRM Reverse Leakage Current - CT Junction Capacitance - Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified) per diode Parameters trr Reverse Recovery Time Min Typ Max Units Test Conditions - 93 172 11 20 490 1740 60 - ns IF = 1.0A, diF/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C IF = 150A VR = 200V diF /dt = 200A/s IRRM Peak Recovery Current - A TJ = 25C TJ = 125C Qrr Reverse Recovery Charge - nC TJ = 25C TJ = 125C Thermal - Mechanical Characteristics Parameters RthJC RthCS Wt T Junction to Case, Single Leg Conducting Both Leg Conducting Case to Heat Sink, Flat, Greased Surface Weight Mounting Torque 0.05 30 1.3 g (N*m) Min Typ Max 0.5 0.25 Units C/W K/W 2 www.irf.com UFB200FA40 Preliminary Data Sheet PD-20486 rev. A 04/01 1000 1000 100 10 1 0.1 0.01 0.001 0 100 200 300 400 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Reverse Current - I R (A) T J = 175C 125C 25C Instantaneous Forward Current - I F (A) 100 10000 T = 150C J T = 125C J T = 25C J Junction Capacitance - C T (pF) T J = 25C 10 1000 100 1 0 0.4 0.8 1.2 1.6 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (per diode) 1 Thermal Impedance Z thJC (C/W) 10 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage PDM 0.1 t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (per diode) www.irf.com 3 UFB200FA40 Preliminary Data Sheet PD-20486 rev. A 04/01 150 Allowable Case Temperature (C) Average Power Loss ( Watts ) 160 140 120 100 80 60 40 20 0 0 DC D = 0.01 D = 0.02 D = 0.05 D = 0.10 DDC 0.20 = D = 0.50 RMS Limit 140 130 120 110 100 90 80 Square wave (D = 0.50) Rated Vr applied DC 70 see note (3) 60 0 20 40 60 80 100 120 140 160 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (per leg) 20 40 60 80 100 120 140 160 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics (per leg) 250 Vr = 200V Tj = 125C Tj = 25C 5000 IF = 150A IF = 75A 4500 4000 Vr = 200V Tj = 125C Tj = 25C 200 3500 Qrr ( nC ) 3000 2500 2000 1500 IF = 150A IF = 75A trr ( ns ) 150 100 1000 500 50 100 di F /dt (A/s ) 1000 0 100 di F /dt (A/s ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com UFB200FA40 Preliminary Data Sheet PD-20486 rev. A 04/01 3 IF trr ta tb 4 VR = 200V 0 2 Q rr I RRM 0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 1 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 di f /dt 4. Qrr - Area under curve defined by t rr and IRRM Q rr = t rr x I 2 RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 1 - Reverse Recovery Parameter Test Circuit Fig. 2 - Reverse Recovery Waveform and Definitions SOT-227 Package Details LEAD ASSIGNMENTS Notes: 1. Dimensioning & tolerancing per ANSI Y14.5M-1982. 2. Controlling dimension: millimeter. 3. Dimensions are shown in millimeters (inches). FRED www.irf.com 5 UFB200FA40 Preliminary Data Sheet PD-20486 rev. A 04/01 SOT-227 Package Details Tube QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED Ordering Information Table Device Code UF 1 B 2 200 3 F 4 A 5 40 6 7 1 2 3 4 5 6 7 - ULTRAFAST RECTIFIER Ultrafst Pt diffused Current Rating Circuit Configuration Package Indicator Voltage Rating Special Options (200 = 200A) (2 separate Diodes, parallel pin-out) (SOT-227 Standard Isolated Base) (40 = 400V) Empty = No special Option LC = n.a. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 04/01 6 www.irf.com |
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