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| AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. Standard Product AO8810 is Pb-free (meets ROHS & Sony 259 specifications). AO8810L is a Green Product ordering option. AO8810 and AO8810L are electrically identical. Features VDS (V) = 20V ID = 7 A (VGS = 4.5V) RDS(ON) < 20m (VGS = 4.5V) RDS(ON) < 24m (VGS = 2.5V) RDS(ON) < 32m (VGS = 1.8V) ESD Rating: 2000V HBM TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 8 7 5.7 30 1.5 1 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 64 89 53 Max 83 120 70 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO8810 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=4.5V VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=7A TJ=125C VGS=2.5V, ID=5.5A 0.4 30 16.5 23 20 24 29 0.76 20 28 24 32 1 2.5 0.6 Min 20 1 5 1 10 1 Typ Max Units V A A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC Static Drain-Source On-Resistance gFS VSD IS VGS=1.8V, ID=5A Forward Transconductance VDS=5V, ID=7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1160 187 146 1.5 16 0.8 3.8 6.2 12.7 51.7 16 17.7 6.7 VGS=4.5V, VDS=10V, ID=7A VGS=5V, VDS=10V, RL=1.35, RGEN=3 IF=7A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 8V VGS =2V 20 ID(A) VGS =1.5V ID(A) 10 125C 25C 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VDS(Volts) Figure 1: On-Regions Characteristics VGS(Volts) Figure 2: Transfer Characteristics 20 VGS=5V 15 10 5 VGS =1V 0 50 Normalize ON-Resistance 1.6 ID=6.5A 1.4 VGS=1.8V VGS=2.5V VGS=4.5V 1.2 40 RDS(ON)(m) VGS =1.8V VGS =2.5V 20 VGS =4.5V 10 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 60 ID=6.5A 50 RDS(ON)(m) 40 IS(A) 30 20 25C 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 VDS=10V ID=7A Capacitance (pF) 1600 Ciss 1200 800 400 0 0 5 10 15 20 0 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Crss Coss 5 4 VGS(Volts) 3 2 1 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s 1ms 0.1s 10ms Power (W) 40 TJ(Max)=150C TA=25C ID (Amps) 10.0 30 20 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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