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| THYRISTOR MODULE 200A / 800V PDT2008 PDH2008 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING PDT TYPICAL APPLICATIONS * AC phase control PDH Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:480g Symbol VDRM VDSM VRRM VRSM Grade PDT/PDH2008 Unit V V Max Rated Value 800 960 800 960 arameter Average Rectified Output Current *1 RMS On-State Current Surge Forward Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals IO(AV) IT(RMS) IFSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Conditions 50Hz Half Sine Wave condition Tc=65C 50 Hz Half Sine Wave,1cycle Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125C IG=300mA, diG/dt=0.2A/s * Unit A A A A2s A/s 200 314 4000 80000 100 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 to +125 C Base Plate to Terminals, AC1min 2000 V M6 Screw 2.5 to 3.5 N*m M8 Screw 9.0 to 10.0 Value per 1 Arm Electrical * Thermal Characteristics Characteristics Peak Off-State Current Peak Reverse Current Peak On-State Voltage Gate Current to Trigger Symbol IDM IRM VTM IGT Test Conditions VDM= VDRM, Tj=125C VRM= VRRM, Tj= 125C ITM= 600A, Tj=25C Tj=-40C VD=6V,IT=1A Tj=25C Tj=125C Tj=-40C VD=6V,IT=1A Tj=25C Tj=125C VD=2/3VDRM Tj=125C VD=2/3VDRM Tj=125C Maximum Value. Min. Typ. Max. 30 30 1.34 300 150 80 5 3 2 0.25 500 100 6 2 4 100 60 0.23 0.1 Unit mA mA V mA Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1: Value Per Module VGT VGD dv/dt tq V V V/s s s s s mA ITM=IO,VD=2/3VDRM dv/dt=20V/s, VR=100V -di/dt=20A/s, Tj=125C tgt Tj=25C, ITM=IT(RMS) VD=2/3VDRM, IG=300mA td diG/dt=0.2A/s tr IL Tj=25C IH Tj=25C Rth(j-c) Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound C/W PDT/PDH2008 OUTLINE DRAWING (Dimensions in mm) PDT PDH |
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