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| 1SS376 Diodes Switching diode 1SS376 !Applications High voltage switching 0.30.05 CATHODE MARK 0.10.05 !Features 1) Small surface mounting type. (UMD2) 2) VRM=300V guaranteed. 3) High reliability. 1.70.1 !Construction Silicon epitaxial planar 1.250.1 Model identification label 2.50.2 0.7 +0.2 -0.1 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 !External dimensions (Units : mm) !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (10ms) Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Tj Tstg Limits 300 250 300 100 2 125 -55~+125 Unit V V mA mA A C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR IR CT trr Min. - - - - - Typ. - - - - - Max. 1.2 0.2 100 3 100 Unit V A A pF ns IF=100mA VR=250V VR=300V Conditons VR=0V, f=1MHz IR=30mA, IF=30mA, Irr=3mA 1SS376 Diodes !Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1.2 FORWARD CURRENT : IF (A) 100m REVERSE CURRENT : IR (A) 100 125C 10 10m 1 75C 1.1 25C 75 C 125 C -25C 100n 25C 1m 10n 200 0 0.5 1.0 2n 0 50 100 150 200 250 300 1.0 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics FORWARD SURGE CURRENT : IF Surge (A) 60 REVERSE RECOVERY TIME : trr (ns) Ta=25C NON REPETITIVE FORWARD SURGE CURRENT IF (A) Io CURRENT (%) 100 80 60 40 20 10 PULSE WIDTH 40 5 P=50% 0 0.2 1 10 100 1000 20 0 20 40 60 0 0 25 50 75 100 125 FORWARD CURRENT : IF PULSE WIDTH : TIME (ms) AMBIENT TEMPERATURE : Ta (C) Fig.4 Reverse recovery time characteristics Fig.5 Surge current characteristics Fig.6 Derating curve (mounting on glass epoxy PCBs) |
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