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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors . . . designed for general-purpose amplifier and low-frequency switching applications. * High DC Current Gain @ IC = 10 Adc -- hFE = 2400 (Typ) -- 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) -- 2N6285, 2N6286, 2N6287 * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) -- 2N6282, 2N6285 VCEO(sus) = 80 Vdc (Min) -- 2N6283, 2N6286 VCEO(sus) = 100 Vdc (Min) -- 2N6284, 2N6287 * Monolithic Construction with Built-In Base-Emitter Shunt Resistors *MAXIMUM RATINGS Rating 2N6282 thru 2N6284* PNP 2N6285 thru 2N6287* *Motorola Preferred Device NPN PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB VEB IC IB 2N6282 2N6285 60 60 2N6283 2N6286 80 80 2N6284 2N6287 100 100 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 20 40 Collector Current -- Continuous Peak Base Current 0.5 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 160 0.915 Watts W/_C TJ,Tstg - 65 to + 200 DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS _C *THERMAL CHARACTERISTICS Characteristic CASE 1-07 TO-204AA (TO-3) Symbol RJC Max Unit Thermal Resistance, Junction to Case 1.09 _C/W * Indicates JEDEC Registered Data. 160 140 120 100 80 60 40 20 0 0 25 50 100 125 75 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6282 thru 2N6284 2N6285 thru 2N6287 * Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 s, Duty Cycle = 2% *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS V1 APPROX - 12 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT RB V2 APPROX + 8.0 V D1 51 8.0 k 50 0 Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) Base-Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) 2 tr, tf 10 ns DUTY CYCLE = 1.0% Figure 2. Switching Times Test Circuit 25 s v + 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES [ [ Characteristic [ [ VCC - 30 V RC SCOPE 2N6282, 2N6285 2N6283, 2N6286 2N6284, 2N6287 2N6282, 2N6285 2N6283, 2N6286 2N6284, 2N6287 2N6282,83,84 2N6285,86,87 0.3 VCC = 30 Vdc I /I = 250 0.2 C B IB1 = IB2 td @ VBE(off) = 0 V T = 25C 0.1 J 0.5 0.7 1.0 2.0 3.0 0.2 0.3 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 1.0 0.7 0.5 2.0 3.0 10 7.0 5.0 Motorola Bipolar Power Transistor Device Data ts VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Figure 3. Switching Times t, TIME ( s) ICEO IEBO ICEX |hfe| Cob hFE hfe tf Min 60 80 100 300 750 100 4.0 -- -- -- -- -- -- -- -- -- -- -- -- 2N6282/84 (NPN) 2N6285/87 (PNP) tr 18,000 -- Max 400 600 4.0 2.8 2.0 3.0 2.0 0.5 5.0 1.0 1.0 1.0 -- -- -- -- -- mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc pF -- -- 20 2N6282 thru 2N6284 2N6285 thru 2N6287 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 0.01 D = 0.5 0.2 0.1 0.05 0.02 RJC(t) = r(t) RJC RJC = 1.09C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 Figure 4. Thermal Response ACTIVE-REGION SAFE OPERATING AREA 50 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 2.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE 50 0.1 ms 0.5 ms 1.0 ms 5.0 ms dc TJ = 200C 0.1 ms 10 5.0 5.0 ms 2.0 1.0 0.5 0.2 0.1 100 0.05 2.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE 50 0.1 ms IC, COLLECTOR CURRENT (AMP) 20 10 5.0 5.0 ms 2.0 1.0 0.5 0.2 0.1 100 0.05 2.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE 20 0.5 ms 1.0 ms 0.5 ms 1.0 ms dc TJ = 200C dc TJ = 200C 5.0 10 20 50 5.0 10 20 50 5.0 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. 2N6282, 2N6285 Figure 6. 2N6283, 2N6286 Figure 7. 2N6284, 2N6287 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 2000 1000 500 200 100 50 20 10 1.0 2.0 2N6282/84 (NPN) 2N6285/87 (PNP) 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 100 0.1 0.2 2N6282/84 (NPN) 2N6285/87 (PNP) 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 TJ = 25C VCE = 3.0 Vdc IC = 10 A 1000 TJ = 25C 700 C, CAPACITANCE (PF) 500 Cib Cob 300 200 Figure 8. Small-Signal Current Gain Motorola Bipolar Power Transistor Device Data Figure 9. Capacitance 3 2N6282 thru 2N6284 2N6285 thru 2N6287 NPN 2N6282, 2N6283, 2N6284 20,000 VCE = 3.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 TJ = 150C 10,000 7000 5000 25C 3000 2000 1000 700 500 300 0.2 0.3 - 55C 30,000 20,000 PNP 2N6285, 2N6286, 2N6287 VCE = 3.0 V TJ = 150C 25C - 55C 0.2 0.3 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 10. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 5.0 A 10 A 15 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 5.0 A 2.2 10 A 15 A 2.2 1.8 1.8 1.4 1.4 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 Figure 11. Collector Saturation Region 3.0 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3.0 TJ = 25C 2.5 2.0 VBE(sat) @ IC/IB = 250 2.0 1.5 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 1.0 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 1.0 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data 2N6282 thru 2N6284 2N6285 thru 2N6287 NPN 2N6282, 2N6283, 2N6284 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) + 5.0 + 4.0 + 3.0 + 2.0 + 1.0 0 - 1.0 - 2.0 - 3.0 - 4.0 - 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 VB for VBE 25C to + 150C - 55C to + 25C 5.0 7.0 10 20 *VC for VCE(sat) - 55C to + 25C hFE @ VCE *APPLIES FOR IC/IB 250 PNP 2N6285, 2N6286, 2N6287 + 5.0 + 4.0 + 3.0 + 2.0 + 1.0 0 - 1.0 - 2.0 - 3.0 - 4.0 - 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 VB for VBE 25C to + 150C - 55C to + 25C 5.0 7.0 10 20 *VC for VCE(sat) *APPLIES FOR IC/IB hFE @ VCE 250 + 3.0 V + 3.0 V 25C to 150C 25C to 150C - 55C to + 25C IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 13. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 TJ = 150C 102 100C 101 REVERSE 100 25C 10-1 - 0.6 - 0.4 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4 FORWARD VCE = 30 V 103 102 101 100 10-1 REVERSE 10-2 10-3 + 0.6 + 0.4 25C FORWARD 100C VCE = 30 V TJ = 150C + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 14. Collector Cut-Off Region NPN 2N6282 2N6283 2N6284 COLLECTOR PNP 2N6285 2N6286 2N6287 COLLECTOR BASE BASE [ 8.0 k [ 60 EMITTER [ 8.0 k [ 60 EMITTER Figure 15. Darlington Schematic Motorola Bipolar Power Transistor Device Data 5 2N6282 thru 2N6284 2N6285 thru 2N6287 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N6282/D* 2N6282/D |
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