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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BGA2001 Silicon MMIC amplifier
Product specification Supersedes data of 1999 Jul 23 1999 Aug 11
Philips Semiconductors
Product specification
Silicon MMIC amplifier
FEATURES * Low current, low voltage * Very high power gain * Low noise figure * Integrated temperature compensated biasing * Supply and RF output pin combined. APPLICATIONS * RF front end * Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) * Radar detectors * Low noise amplifiers * Satellite television tuners (SATV) * High frequency oscillators. DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VS IS MSG NF PARAMETER DC supply voltage DC supply current maximum stable gain noise figure CONDITIONS RF input AC coupled VVS-OUT = 2.5 V; RF input AC coupled VVS-OUT = 2.5 V; f = 1.8 GHz; Tamb = 25 C VVS-OUT = 2.5 V; f = 1.8 GHz; S = opt - 4.5 19.5 1.3 TYP. - - -
Marking code: A1.
2 Top view 1
MAM430
BGA2001
PINNING PIN 1 2 3 4 GND RF in GND VS + RFout DESCRIPTION
handbook, halfpage
VS+RFout 4
3
BIAS CIRCUIT
RFin
GND
Fig.1 Simplified outline (SOT343R) and symbol.
MAX. 4.5 V
UNIT mA dB dB
1999 Aug 11
2
Philips Semiconductors
Product specification
Silicon MMIC amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS IS Ptot Tstg Tj PARAMETER supply voltage supply current (DC) total power dissipation storage temperature operating junction temperature CONDITIONS RF input AC coupled forced by DC voltage on RF input Ts 100 C - - - -65 - MIN.
BGA2001
MAX. 4.5 30 135 +150 150
UNIT V mA mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 350 UNIT K/W
CHARACTERISTICS RF input AC coupled; Tj = 25 C; unless otherwise specified. SYMBOL IS PARAMETER supply current CONDITIONS VVS-OUT = 1 V VVS-OUT = 2.5 V VVS-OUT = 4.5 V MSG maximum stable gain VVS-OUT = 2.5 V; IVS-OUT = 4 mA; f = 900 MHz VVS-OUT = 2.5 V; IVS-OUT = 4 mA; f = 1.8 GHz |s21|2 insertion power gain VVS-OUT = 2.5 V; IVS-OUT = 4 mA; f = 900 MHz VVS-OUT = 2.5 V; IVS-OUT = 4 mA; f = 1.8 GHz PL load power - 3 - - - - - MIN. TYP. 0.7 4.5 11 22 19.5 18 14 -2 - 6 - - - - - - MAX. UNIT mA mA mA dB dB dB dB dBm
at 1 dB gain compression point; - VVS-OUT = 2.5 V; IVS-OUT = 4.4 mA; f = 900 MHz; VVS-OUT = 2.5 V; IVS-OUT = 4 mA; f = 900 MHz; S = opt VVS-OUT = 2.5 V; IVS-OUT = 4 mA; f = 1.8 GHz; S = opt -
NF
noise figure
1.3
-
dB
-
1.3
-
dB
IP3(in)
input intercept point; note 1
VVS-OUT = 2.5 V; IVS-OUT = 4.4 mA; f = 900 MHz VVS-OUT = 2.5 V; IVS-OUT = 4.5 mA; f = 1800 MHz
- -
-7.4 -4.5
- -
dBm dBm
Note 1. See application note: RNR-T45-99-B-0513.
1999 Aug 11
3
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
MGS606
handbook, halfpage handbook, halfpage
200
100 pF
R1 VS L1 C RF out
Ptot (mW) 150
GND BGA2001 IN C RF in
VS-OUT 100
GND
50
MGS605
0 0 50 100 150 Ts (C) 200
Fig.2 Typical application circuit.
Fig.3 Power derating curve.
handbook, halfpage
12
MGS607
IVS-OUT (mA)
handbook, halfpage
16
MGS608
IVS-OUT
(8)
10
(mA) 12
8
(7) (6)
6
(5) (4)
8
4
(3)
4 2
(2) (1)
0 -40 (1) (2) (3) (4) VVS-OUT = 1 V VVS-OUT = 1.5 V VVS-OUT = 2 V VVS-OUT = 2.5 V
0 0 (5) (6) (7) (8) 40 80 120 Tamb (C) 0 1 2 3 4 VVS-OUT (V) 5
VVS-OUT = 3 V VVS-OUT = 3.5 V VVS-OUT = 4 V VVS-OUT = 4.5 V.
Fig.4
Bias current (IVS-OUT) as a function of ambient temperature with VVS-OUT as parameter; typical values.
Fig.5
Bias current (IVS-OUT) as a function of voltage at the output pin (VVS-OUT); typical values.
1999 Aug 11
4
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
MGS609
MGS610
handbook, halfpage
30 gain (dB) 25
handbook, halfpage
25
gain (dB) GUM MSG 15 GUM 20 MSG
20
15 10 10 5
5
0 0 2 4 6 8 10 IVS-OUT (mA)
0 0 2 4 6 8 10 IVS-OUT (mA)
f = 900 MHz.
f = 1800 MHz.
Fig.6
Gain as a function of bias current (IVS-OUT); typical values.
Fig.7
Gain as a function of bias current (IVS-OUT); typical values.
handbook, halfpage
40
MGS611
handbook, halfpage NF
gain (dB) 30 MSG
GUM
3 min (dB) 2.5
MGS612
(1)
2
(2) (3) (4)
20 Gmax
1.5
1 10 0.5
0 102
103
f (MHz)
104
0 10-1
1
I C (mA)
10
VVS-OUT = 2.5 V; IVS-OUT = 4 mA.
(1) f = 2400 MHz (2) f = 1000 MHz
(3) f = 900 MHz (4) f = 1800 MHz.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Minimum noise figure as a function of bias current (IVS-OUT); typical values.
1999 Aug 11
5
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
handbook, full pagewidth
90 unstable region source 135 +0.5 +1 +2 45 unstable region load 1.0 0.8 0.6 0.4 0.2 5
(4) (5)
+0.2
(1)
+5 opt 1 2 0
180
0
0.2
0.5
(2)
0
(3)
f = 900 MHz; VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 . (1) G = 22 dB (2) G = 21 dB (3) G = 20 dB (4) NF = 1.3 dB (5) NF = 1.5 dB (6) NF = 1.7 dB.
-0.2
(6)
-5
-135
-0.5 -1
-2
- 45 1.0
- 90
MGS613
Fig.10 Noise, stability and gain circles; typical values.
handbook, full pagewidth
90 unstable region source 135 +1 +0.5
unstable region load
1.0 45 0.8 0.6
+2
+0.2
(1) (2)
opt
+5
0.4 0.2
180
0
0.2
(3)
0.5
1
(4) (5) (6)
2
5
0
0
f = 1800 MHz; VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 . (1) G = 19 dB (2) G = 18 dB (3) G = 17 dB (4) NF = 1.3 dB (5) NF = 1.5 dB (6) NF = 1.7 dB.
-0.2
-5
-0.5 -135 -1
-2
- 45 1.0
- 90
MGS614
Fig.11 Noise, stability and gain circles; typical values.
1999 Aug 11
6
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
handbook, full pagewidth
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 3 GHz -0.2 1.8 GHz -0.5 -1 1.0 - 90
MGS615
+0.2
+5
1
2
5 100 MHz 200 MHz 500 MHz -5
0
0
1 GHz 900 MHz -2 - 45
-135
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 .
Fig.12 Common emitter input reflection coefficient (s11); typical values.
handbook, full pagewidth
90
135 900 MHz 1 GHz 500 MHz 200 MHz 100 MHz 180 10 8 6 4 2 3 GHz 1.8 GHz
45
0
-135
- 45
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 .
- 90
MGS616
Fig.13 Common emitter forward transmission coefficient (s21); typical values.
1999 Aug 11
7
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2001
handbook, full pagewidth
90
135
45
180
0.5
0.4
0.3
0.2
0.1
3 GHz 100 MHz 0
-135
- 45
- 90 VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 .
MGS617
Fig.14 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 100 MHz 200 MHz -0.2 3 GHz 1.8 GHz -0.5 -135 -1 1.0 - 90
MGS618
+0.2
+5
0
0
500 MHz 900 MHz 1 GHz -2
-5
- 45
VVS-OUT = 2.5 V; IVS-OUT = 4 mA; Zo = 50 .
Fig.15 Common emitter output reflection coefficient (s22); typical values.
1999 Aug 11
8
Philips Semiconductors
Product specification
Silicon MMIC amplifier
PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads
BGA2001
SOT343R
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1999 Aug 11
9
Philips Semiconductors
Product specification
Silicon MMIC amplifier
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BGA2001
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 11
10
Philips Semiconductors
Product specification
Silicon MMIC amplifier
NOTES
BGA2001
1999 Aug 11
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/06/pp12
Date of release: 1999
Aug 11
Document order number:
9397 750 06264

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