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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2513, 2SK2513-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Transistor designed for high current switching applications. 3.0 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 0.2 FEATURES * Low On-Resistance RDS(on)1 = 15 m (VGS = 10 V, ID = 23 A) RDS(on)2 = 23 m (VGS = 4 V, ID = 23 A) 4 123 6.0 MAX. * Low Ciss Ciss = 2 100 pF TYP. * Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 20 45 180 75 1.5 150 V V A A W W C 1.3 0.2 0.75 0.1 2.54 0.5 0.2 2.8 0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 4 1.0 0.5 8.5 0.2 1.5 MAX. 4.8 MAX. 1.3 0.2 -55 to +150 C 1.4 0.2 1.0 0.3 (2.54) (2.54) 123 1.1 0.4 3.0 0.5 R) ) .5 R (0 0.8 ( 0.5 0.2 MP-25Z (SURFACE MOUNT TYPE) Drain 2.8 0.2 1. 2. 3. 4. Gate Drain Source Fin (Drain) Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D10292EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan Gate Gate Protection Diode Source (c) 1995 2SK2513, 2SK2513-Z ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-State Resistance Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 2 100 1 100 500 45 380 320 320 100 7 40 1.0 100 180 1.0 15 MIN. TYP. 11 16 1.5 20 10 10 MAX. 15 23 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 23 A VGS = 4 V, ID = 23 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 23 A VDS = VDSS, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 23 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 45 A VDD = 48 V VGS = 10 V IF = 45 A, VGS = 0 IF = 45 A, VGS = 0 di/dt = 100 A/s A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time D.U.T. RL PG. RG RG = 10 VGS Wave Form Test Circuit 2 Gate Charge D.U.T. IG = 2 mA 10 % VGS (on) 90 % VGS 0 RL VDD VDD ID 90 % 90 % ID PG. 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2513, 2SK2513-Z TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 120 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1 000 TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 200 ID(pulse) VGS = 20 V VGS = 10 V ID - Drain Current - A 100 R DS (o n) Li m ite d ID(DC) = s 10 1 10 20 0 DC ms m 0 m s ID - Drain Current - A PW VGS = 4 V 100 s 10 TC = 25 C Single Pulse 1 0.1 1 10 100 0 1 2 3 4 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1 000 Pulsed VDS - Drain to Source Voltage - V ID - Drain Current - A 100 TA = 125 C 75 C 25 C 10 -25 C 1 VDS = 10 V 0 2 4 6 8 VGS - Gate to Source Voltage - V 3 2SK2513, 2SK2513-Z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-a) = 83.3 C/W 100 10 1 Rth(ch-c) = 1.67 C/W 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 1 000 VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 ID = 23 A 40 100 10 RDS(on) - Drain to Source On-State Resistance - m 20 1 1 10 100 1 000 0 10 20 30 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-State Resistance - m VGS(off) - Gate to Source Cutoff Voltage - V 80 Pulsed 2 VDS = 10 V ID = 1 mA 60 40 VGS = 4 V 20 VGS = 10 V 0 1 10 ID - Drain Current - A 100 1 0 -50 0 50 100 150 Tch - Channel Temperature - C 4 2SK2513, 2SK2513-Z DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed ISD - Diode Forward Current - A 100 RDS(on) - Drain to Source On-State Resistance - m 30 VGS = 4 V 20 10 1 VGS = 0 V 10 0 -50 0 50 VGS = 10 V 0.1 0 0.5 1.0 1.5 ID = 23 A 100 150 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns td(off) tf tr td(on) 10 100 000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz 10 000 Ciss 1 000 Coss 100 Crss 100 0.1 1 10 100 1.0 0.1 1.0 VDD = 30 V VGS = 10 V RG = 10 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 trr - Reverse Recovery time - ns di/dt = 100 A/ s VGS = 0 VDS - Drain to Source Voltage - V 80 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 45 A 14 60 VDS 40 VDD = 12 V 30 V 48 V VGS 12 10 8 6 20 4 2 0 40 80 120 0 160 VGS - Gate to Source Voltage - V 100 10 1.0 0.1 1.0 10 100 ID - Drain Current - A Qg - Gate Charge - nC 5 2SK2513, 2SK2513-Z REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 6 2SK2513, 2SK2513-Z [MEMO] 7 2SK2513, 2SK2513-Z No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8 |
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