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PD - 9.1373A
IRFI1010N
HEXFET(R) Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.012
G
ID = 49A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
49 35 290 58 0.38 20 360 43 5.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
2.6 65
Units
C/W 8/25/97
IRFI1010N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. 55 --- --- 2.0 30 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.06 --- --- --- --- --- --- --- --- --- --- 11 66 40 46 4.5 7.5 2900 880 330 12
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.012 VGS = 10V, ID = 26A 4.0 V VDS = VGS, I D = 250A --- S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 130 ID = 43A 23 nC VDS = 44V 53 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- I D = 43A ns --- RG = 3.6 --- RD = 0.62, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V pF --- = 1.0MHz, See Fig. 5 --- = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 81 240 49 A 290 1.3 120 370 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 26A, VGS = 0V TJ = 25C, IF = 43A di/dt = 100A/s
D
S
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRF1010N data and test conditions
VDD = 25V, starting TJ = 25C, L = 390H
RG = 25, IAS = 43A. (See Figure 12)
ISD 43A, di/dt 260A/s, VDD V(BR)DSS,
TJ 175C
IRFI1010N
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP
1000
I , D ra in -to -S o u rce C u rre n t (A ) D
100
I , D ra in -to -S o u rce C u rre n t (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP
100
4 .5V 20 s P UL SE W IDTH TC = 17 5C
0.1 1 10 100
4.5 V
10 0.1 1
2 0 s PU LSE W ID TH TC = 2 5C
10
A
10
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e (N o rm a liz e d )
I D = 72 A
I D , D r ain- to-S ourc e C urre nt (A )
2.5
TJ = 2 5 C
100
TJ = 1 7 5 C
2.0
1.5
10
1.0
0.5
1 4 5 6 7
V DS = 2 5 V 2 0 s P U L SE W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI1010N
5000
4000
3000
C os s
2000
V G S , G a te -to -S o u rc e V o lta g e (V )
V GS C is s C rs s C is s C o ss
= 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d
20
I D = 4 3A V DS = 4 4V V DS = 2 8V
16
C , C a p a c ita n c e (p F )
12
8
C rs s
1000
4
0 1 10 100
A
0 0 20 40 60
FO R TES T C IR CU IT SEE FIG U R E 13
80 100 120 140
A
V D S , Drain-to-Source V oltage (V)
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R e ve rs e D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)
10 s 100 100 s
100
TJ = 17 5C T J = 25C
I D , D ra in C u rre n t (A )
1m s 10 10m s
10 0.4 0.8 1.2 1.6 2.0
V G S = 0V
2.4
A
1 1
T C = 25 C T J = 17 5C S ing le Pulse
10 100
A
2.8
V S D , S ource-to-Drain Voltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI1010N
50
VDS VGS
RD
D.U.T.
+
40
RG
I D , Drain Current (A)
- VDD
10V
30
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0 25 50 75 100 125 150 175
T C , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
(Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.001 0.01 0.1 1 10 PDM t1 t2
Thermal Response
0.01 0.00001
0.0001
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI1010N
1000
E A S , S in g le P u lse A va la n c h e E n e rg y (m J )
15 V
TO P
800
BO TTOM
ID 1 8A 31A 43 A
VDS
L
D R IV E R
600
RG 20V tp
D .U .T IA S 0 .0 1
+ V - DD
A
400
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS tp
200
0
V D D = 2 5V
25 50 75 100 125 150
A
175
Starting TJ , Junction T emperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFI1010N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFI1010N
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
10.60 (.417 ) 10.40 (.409 ) o 3 .40 (.1 33) 3 .10 (.1 23) -A3.7 0 (.145) 3.2 0 (.126) 4.80 (.189 ) 4.60 (.181 ) 2.80 (.110) 2.60 (.102) L EA D AS SIGN M EN T S 1 - GA T E 2 - D R AIN 3 - SO U R C E
7.10 (.280 ) 6.70 (.263 )
16 .0 0 (.630) 15 .8 0 (.622)
1.15 (.045) M IN . 1 2 3
NO T ES : 1 D IM E N SION IN G & T O LER AN C IN G PE R A N SI Y1 4.5M , 1982 2 C O N T R OLL IN G D IM EN SION : IN C H .
3.30 (.130) 3.10 (.122) -B13 .7 0 (.540) 13 .5 0 (.530) C D
A 1.40 (.05 5) 3X 1.05 (.04 2) 2 .5 4 (.100) 2X 0.90 (.035 ) 3X 0.70 (.028 ) 0.25 (.010) M AM B 3X 0.48 (.019 ) 0.44 (.017 )
B
2.85 (.1 12) 2.65 (.1 04)
M IN IM U M C R E EP AG E D IST A N C E B ET W E EN A -B -C -D = 4.80 (.189 )
Part Marking Information
TO-220 Fullpak E X AMXAM PLE H IS HIS A N A N F1 010 E PL E : T : T I S IS IR IRF I840G W ITW ITH S E MB LY H A S AS SE MBLY L OTLOT D E 9 B1M CO CODE E401
A
I NT E RN A TIO N AL INT ER NAT IONA L R E C TIF IE R IRF 10 10 RE CTIF IER IRF I840G LOG O 9246 LOGO 9B 401 1 M 5 E 9 24 A SS E MB LY AS SE MBLY LOT C OD E E LOT COD
P AR T NU M BE R
A
PA RT NU MBE R
D A TE C OD E (Y YW W )CODE D ATE Y(YYW YE)A R Y=W YY = W AR W W = YE EE K
W W = W E EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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