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| Transistors with built-in Resistor UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z (UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z) Silicon PNP epitaxial planer transistor 0.650.15 2.8 -0.3 +0.2 Unit: mm 0.650.15 1.5 -0.05 +0.25 For digital circuits 0.95 2.9 -0.05 1 0.95 s Features q q 1.90.2 +0.2 3 0.4 -0.05 +0.1 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1.1 -0.1 +0.2 2 1.45 0 to 0.1 q q q q q q q q q q q q q q q q q q q q Marking Symbol (R1) UNR2111 6A 10k UNR2112 6B 22k UNR2113 6C 47k UNR2114 6D 10k UNR2115 6E 10k UNR2116 6F 4.7k UNR2117 6H 22k UNR2118 6I 0.51k UNR2119 6K 1k UNR2110 6L 47k UNR211D 6M 47k UNR211E 6N 47k UNR211F 6O 4.7k UNR211H 6P 2.2k UNR211L 6Q 4.7k UNR211M EI 2.2k UNR211N EW 4.7k UNR211T EY 22k UNR211V FC 2.2k UNR211Z FE 4.7k Parameter Symbol VCBO VCEO IC PT Tj Tstg (R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 10k 4.7k 47k 47k 47k 2.2k 22k Ratings -50 -50 -100 200 150 Unit V V mA mW C 0.1 to 0.3 0.40.2 1:Base 2:Emitter 3:Collector 0.8 s Resistance by Part Number EIAJ:SC-59 Mini Type Package Internal Connection R1 C B R2 E s Absolute Maximum Ratings Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature (Ta=25C) -55 to +150 C Note) The part numbers in the parenthesis show conventional part number. 0.16 -0.06 +0.1 1 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z s Electrical Characteristics Parameter Collector cutoff current UNR2111 UNR2112/2114/211E/211D/211M/211N/211T UNR2113 Emitter cutoff current UNR2115/2116/2117/2110 UNR211F/211H UNR2119 UNR2118/211L/211V UNR211Z Collector to base voltage Collector to emitter voltage UNR2111 UNR2112/211E UNR2113/2114/211M Forward current transfer ratio (Ta=25C) Symbol ICBO ICEO Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 min typ max - 0.1 - 0.5 - 0.5 - 0.2 - 0.1 IEBO VEB = -6V, IC = 0 - 0.01 -1.0 -1.5 -2.0 - 0.4 VCBO VCEO IC = -10mA, IE = 0 IC = -2mA, IB = 0 -50 -50 35 60 80 160 VCE = -10V, IC = -5mA 30 20 80 6 60 VCE(sat) VOH IC = -10mA, IB = - 0.3mA IC = -10mA, IB = -1.5mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k VCC = -5V, VB = -3.5V, RL = 1k VCC = -5V, VB = -10V, RL = 1k VCC = -5V, VB = -6V, RL = 1k fT VCB = -10V, IE = 1mA, f = 200MHz 80 10 22 47 R1 (-30%) 4.7 0.51 1 2.2 (+30%) k -4.9 - 0.2 - 0.2 - 0.2 - 0.2 MHz V - 0.07 400 20 200 - 0.25 - 0.25 V V V 460 V V mA Unit A A UNR2115*/2116*/2117*/2110* UNR2119/211F/211D/211H hFE UNR2118/211L UNR211N/211T UNR211V UNR211Z Collector to emitter saturation voltage UNR211V Output voltage high level Output voltage low level UNR2113 UNR211D UNR211E Transition frequency UNR2111/2114/2115 UNR2112/2117/211T Input resistance UNR2113/2110/211D/211E UNR2116/211F/211L/211N/211Z UNR2118 UNR2119 UNR211H/211M/211V VOL * hFE rank classification (UNR2115/2116/2117/2110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z s Electrical Characteristics (continued) Parameter UNR2111/2112/2113/211L UNR2114 UNR2118/2119 UNR211D Resistance ratio UNR211E UNR211F/211T UNR211H UNR211M UNR211N UNR211V UNR211Z R1/R2 Symbol (Ta=25C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 0.17 0.22 0.047 0.1 1.0 0.21 0.27 max 1.2 0.25 0.12 Unit 3 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Common characteristics chart PT -- Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics charts of UNR2111 IC -- VCE -160 -140 IB=-1.0mA Ta=25C -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE= -10V hFE -- IC Ta=75C -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Ta=75C Collector current IC (mA) -0.9mA -120 -100 -80 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA Forward current transfer ratio hFE 25C 120 -25C 80 25C 40 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO= -0.2V Ta=25C -10000 -3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UNR2112 IC -- VCE -160 -140 Ta=25C IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -80 -60 -40 -20 0 0 -2 -4 -6 -8 -10 -12 -0.4mA -0.3mA -0.2mA -0.1mA -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE -- IC 400 VCE= -10V -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Forward current transfer ratio hFE Collector current IC (mA) -120 -100 300 Ta=75C 200 25C -25C 100 25C Ta=75C -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2113 IC -- VCE -160 IB=-1.0mA -140 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE= -10V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Ta=75C Forward current transfer ratio hFE 300 Ta=75C 25C 200 -25C -0.4mA -0.3mA -0.2mA 25C 100 -0.1mA -8 -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2114 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE= -10V IB=-1.0mA -30 -10 -3 -1 -0.3 -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 25C Ta=75C Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA Forward current transfer ratio hFE -140 300 Ta=75C 200 25C -25C 100 -8 -10 -12 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -1000 -300 VIN -- IO VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -100 -30 -10 -3 -1 -0.3 -0.1 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UNR2115 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25C hFE -- IC VCE= -10V Collector current IC (mA) -120 -100 -80 -60 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -10 -3 -1 -0.3 -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 25C Ta=75C Forward current transfer ratio hFE -140 IB=-1.0mA -30 300 Ta=75C 200 25C -25C 100 -40 -0.1mA -20 0 0 -2 -4 -6 -8 -10 -12 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 3 2 1 -0.03 -0.01 -0.1 -0.3 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2116 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 25C Ta=75C hFE -- IC VCE= -10V Collector current IC (mA) -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 Forward current transfer ratio hFE -140 IB=-1.0mA 300 Ta=75C -0.4mA -0.3mA -0.2mA 200 25C -25C 100 -0.1mA -25C -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 7 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO=-0.2V Ta=25C -10000 -3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2117 IC -- VCE -120 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE= -10V -100 Collector current IC (mA) -80 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 25C Ta=75C Forward current transfer ratio hFE -30 300 -60 -0.3mA -0.2mA -20 -0.1mA 200 Ta=75C -40 25C 100 -25C 0 0 -2 -4 -6 -8 -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 -10000 IO -- VIN f=1MHz IE=0 Ta=25C VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) -3000 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UNR2118 IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE= -10V -200 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C IB=-1.0mA -0.9mA -160 -0.8mA -0.7mA -120 -0.6mA -0.5mA -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE Collector current IC (mA) 120 Ta=75C 80 25C -25C 40 -80 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2119 IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -25C hFE -- IC VCE= -10V -200 Forward current transfer ratio hFE Collector current IC (mA) -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA 120 Ta=75C 80 25C -25C -120 Ta=75C -80 -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA 0 -2 -4 -6 -8 -10 -12 40 -40 0 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 9 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2110 IC -- VCE -120 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE -- IC VCE= -10V -30 -10 -3 -1 Ta=75C -0.3 -0.1 -0.03 -25C 25C Forward current transfer ratio hFE Collector current IC (mA) Ta=25C IB=-1.0mA -0.9mA -100 -0.8mA -0.7mA -0.6mA -0.5mA -80 -0.4mA -0.3mA -60 -0.2mA -40 -0.1mA -20 300 Ta=75C 200 25C -25C 100 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UNR211D IC -- VCE -60 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 160 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) -50 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -25C Ta=75C Forward current transfer ratio hFE IB=-1.0mA -0.9mA -0.8mA Ta=25C Collector current IC (mA) 120 Ta=75C -40 -0.3mA -30 -0.2mA -0.7mA -0.6mA -0.5mA -0.4mA -0.1mA -10 25C 80 -25C -20 40 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -1.5 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR211E IC -- VCE -60 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) -50 -10 -3 -1 -0.3 -0.1 -0.03 -25C Forward current transfer ratio hFE IB=-1.0mA -0.9mA -0.8mA -0.7mA Ta=25C -30 Collector current IC (mA) 300 -40 -0.3mA -30 -0.6mA -0.5mA -0.4mA -0.2mA Ta=75C 25C 200 Ta=75C 100 25C -25C -20 -0.1mA -10 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 11 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -1.5 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR211F IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE= -10V -200 Collector current IC (mA) -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 Forward current transfer ratio hFE 120 Ta=75C 25C 80 -25C -120 -0.5mA -80 -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 -2 -4 -6 -8 -10 -12 40 -25C 0 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UNR211H IC -- VCE -120 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -100 Forward current transfer ratio hFE 200 Collector current IC (mA) -10 -80 IB=-0.5mA -0.4mA 160 Ta=75C 120 25C 80 -25C 40 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -1 Ta=75C 25C -0.1 -25C -0.01 -1 -3 -10 -30 -100 -300 -1000 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) -10 3 -1 2 -0.1 1 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR211L IC -- VCE -240 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -200 Forward current transfer ratio hFE -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -1 Ta=75C 25C -25C 200 Collector current IC (mA) -160 IB=-1.0mA -0.8mA -80 -0.6mA -0.4mA -0.2mA 0 0 -2 -4 -6 -8 -10 -12 160 -120 120 Ta=75C 25C -25C 80 -40 40 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 13 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) -10 3 -1 2 -0.1 1 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR211M IC -- VCE 240 -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 hFE -- IC 500 VCE= -10V -3 -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 -1 25C Ta=75C 200 Forward current transfer ratio hFE Collector current IC (mA) 160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA 400 300 120 200 Ta=75C 25C -25C 80 -0.5mA -0.4mA -0.3mA -25C 40 100 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 10 IO -- VIN 10-4 f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 Collector output capacitance Cob (pF) VO=-0.2V Ta=25C 8 Output current IO (A) Input voltage VIN (V) 10-3 -10 -3 -1 -0.3 -0.1 -0.03 6 10-2 4 10-1 2 0 -0.1 -0.3 -1 -3 -10 -30 -100 1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 14 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UNR211N IC -- VCE -200 Ta=25C -175 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 300 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 Collector current IC (mA) -150 -125 -100 -75 -50 -25 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA -1 Ta=75C -0.1 25C -25C -25C 100 50 0 0 -2 -4 -6 -8 -10 -12 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 VO=-5V Ta=25C VIN -- IO -100 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 -100 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -1 2 -10 -0.1 1 0 -1 -10 -100 -1 -0.4 -0.01 -0.1 -1 -10 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR211T IC -- VCE -200 Ta=25C -175 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 300 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 -25C 100 Collector current IC (mA) -150 IB=-1.0mA -125 -100 -75 -50 -25 0 0 -2 -4 -6 -8 -10 -12 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA -1 Ta=75C -0.1 25C -25C 50 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 15 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z IO -- VIN -10000 VO=-5V Ta=25C -100 VIN -- IO VO= -0.2V Ta=25C Output current IO (A) -100 Input voltage VIN (V) -0.6 -0.8 -1 -1.2 -1.4 -1000 -10 -1 -10 -0.1 -1 -0.4 -0.01 -0.1 -1 -10 -100 Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR211V IC -- VCE -12 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 12 VCE=-10V Ta=75C 10 25C 8 -25C Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -10 IB=-1.0mA -0.9mA -8 -0.8mA -0.7mA -6 -0.6mA -0.5mA -4 -0.4mA -0.3mA -2 -0.2mA 0 0 -2 -4 -6 -8 -0.1mA -10 -12 -1 Ta=75C 25C -0.1 -25C Forward current transfer ratio hFE Collector current IC (mA) 6 4 2 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) IO -- VIN -10000 VO=-5V Ta=25C -100 VIN -- IO VO= -0.2V Ta=25C Output current IO (A) Input voltage VIN (V) -0.6 -0.8 -1 -1.2 -1.4 -1000 -10 -100 -1 -10 -0.1 -1 -0.4 -0.01 -0.1 -1 -10 -100 Input voltage VIN (V) Output current IO (mA) 16 UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UNR211Z IC -- VCE -200 Ta=25C -175 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 300 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Collector current IC (mA) -150 IB=-1.0mA -125 -100 -75 -50 -25 0 0 -2 -4 -6 -8 -10 -12 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA -1 200 25C 150 Ta=75C Ta=75C -0.1 25C -25C 100 -25C 50 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 VO=-5V Ta=25C -100 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 -100 Input voltage VIN (V) -0.6 -0.8 -1 -1.2 -1.4 -1000 -10 -1 2 -10 -0.1 1 0 -1 -10 -100 -1 -0.4 -0.01 -0.1 -1 -10 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 17 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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