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www.fairchildsemi.com FS6S1565RB Fairchild Power Switch(FPS) Features * * * * * * * * * * Wide operating frequency range up to 150Khz Internal Burst mode Controller for Stand-by mode Pulse by pulse over current limiting Over current protection(Auto restart mode) Over voltage protection (Auto restart mode) Over load protection(Auto restart mode) Internal thermal shutdown function(Auto restart mode) Under voltage lockout Internal high voltage sense FET Eternal sync terminal/Soft start Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply. TO-3P-5L 1 Internal Block Diagram Vref 3 Vpp=5.8/7.2V OSC Internal Bias Vref Vfb Vth=1V Burst mode controller Vref 1 5 UVLO S Q Ron Vcc Vth=11V/12V R Roff PWM 4 Ifb 2.5R R Vcc Vfb Offset Rsenese Vref Idelay OLP Vth=7.5V Vcc Vth=30V OVP OCL Filter (130nsec) TS D (Tj=160) Vth=1V 2 S UVLO Reset (Vcc=9V) Q Q S R UVLO Reset (Vcc=9V) R Rev.1.0.1 (c)2001 Fairchild Semiconductor Corporation FS6S1565RB Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Parameter Drain-source(GND) voltage Gate-source (GND) Voltage Drain current pulsed (2) Single pulsed avalanche energy (3) Single Pulsed Avalanche current (4) (1) Symbol VDSS VDGR VGS IDM EAS IAS ID ID VCC VFB VS_S PD(Watt H/S) Derating Tj TA TSTG Value 650 650 30 60 1040 37 15 9.5 35 -0.3 to VCC -0.3 to 10 270 2.17 +160 -25 to +85 -55 to +150 Unit V V V ADC mJ A ADC ADC V V V W W/C C C C Drain-Gate Voltage (RGS=1M) Continuous drain current (Tc = 25C) Continuous drain current (TC=100C) Supply voltage Input Voltage Range Total Power Dissipation Operating junction temperature Operating Ambient Temperature Storage Temperature range Notes: 1. Tj=25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=8.5mH, starting Tj=25C 4. L=13uH, starting Tj=25C 2 FS6S1565RB Electrical Characteristics (SFET part) (Ta=25C unless otherwise specified) Parameter Drain-source breakdown voltage Zero gate voltage drain current Static drain-source on resistance (note) Forward transconductance (note) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate source charge Gate drain (Miller) charge Single Pulsed Avalanche current (1) Note: Pulse test : Pulse width 300S, duty 2% 1 S = --R 1. L=13uH, starting Tj=25C Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IAS Condition VGS = 0V, ID = 250A VDS = 650V, VGS = 0V VDS = 520V VGS = 0V, TC = 125C VGS = 10V, ID = 7.5A VDS = 50V, ID = 7.5A VGS = 0V, VDS = 25V, f = 1MHz VDD = 325V, ID = 15A (MOSFET switching time are essentially independent of operating temperature) VGS = 10V, ID = 15A, VDS = 520V (MOSFET Switching time are Essentially independent of Operating temperature) VCC = VFB = VSS = GND Min. 650 - Typ. 0.5 2580 270 50 50 155 270 125 90 15 45 37 Max. 200 300 0.65 - Unit V A A S pF nS nC A 3 FS6S1565RB Electrical Characteristics (Ta=25C unless otherwise specified) Parameter UVLO SECTION Start threshold voltage Stop threshold voltage SENSEFET SECTION Drain to PKG Breakdown voltage Drain to Source Breakdown voltage Drain to Source Leakage current OSCILLATOR SECTION Initial Frequency Voltage Stability Temperature Stability (note4) Maximum duty cycle Minimum Duty Cycle FEEDBACK SECTION Feedback source current Shutdown Feedback voltage Shutdown delay current PROTECTION SECTION Over Voltage Protection Over Current Latch Voltage (Note2) Thermal Shutdown Temp.(Note4) VOVP VOCL TSD Vsync 11V 27 0.9 140 30 1.0 160 33 1.1 V V C IFB VSD Idelay VFB = GND Vfb 6.9V VFB = 5V 0.7 6.9 1.6 0.9 7.5 2.0 1.1 8.1 2.4 mA V A FOSC FSTABLE FOSC DMAX DMIN 12V Vcc 23V -25C Ta 85C 22 0 0 92 25 1 5 95 28 3 10 98 0 kHz % % % % BVpkg BVdss Idss 60HZ AC, Ta = 25C Vdrain = 650V, Ta = 25C Vdrain = 650V, Ta = 25C 3500 650 300 V V uA VSTART VSTOP VFB = GND VFB = GND 14 8 15 9 16 10 V V Symbol Condition Min. Typ. Max. Unit 4 FS6S1565RB Electrical Characteristics (Continued) (Ta=25C unless otherwise specified) Parameter Sync & SOFTSTART SECTION Softstart Vortage Softstart Current Sync High Threshold Voltage Sync Low Threshold Voltage BURST MODE SECTION Burst mode Low Threshold Voltage Burst mode High Threshold Voltage Burst mode Enable Feedback Voltage (Note4) Burst mode Peak Current Limit (Note3) Burst mode Frequency CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note3) TOTAL DEVICE SECTION Start Up current Operating supply current (Note1) ISTART IOP IOP(MIN) IOP(MAX) Vfb = GND, VCC = 14V Vfb = GND, VCC = 16V Vfb = GND, VCC = 10V Vfb = GND, VCC = 28V 10 15 mA 0.1 0.17 mA IOVER 8.5 9.7 10.9 A VBURL VBURH VBEN IBU_PK FBUR Vfb = 0V Vfb = 0V Vcc = 10.5V Vcc = 10.5V Vcc = 10.5V, Vfb = 0V 10.4 11.4 0.7 0.6 40 11.0 12.0 1.0 0.85 50 11.6 12.6 1.3 1.1 60 V V V V KHz VSS ISS VSYNCH VSYNCL Vfb = 2 Vss = V Vcc = 16V, Vfb = 5V Vcc = 16V, Vfb = 5V 4.7 0.8 5.0 1.0 7.2 5.8 5.3 1.2 V mA V V Symbol Condition Min. Typ. Max. Unit Notes: (1) These parameters is the current flowing in the Control IC. (2) These parameters, although guaranteed, are tested in EDS(wafer test) process. (3) These parameters indicate Inductor Current. (4) These parameters, although guranteed at the design, are not tested in massing production. 5 FS6S1565RB Typical Performance Characteristics 0.150 [mA] Start Up Current vs. Temp 11.0 [mA] Operating Current vs. Temp 0.125 10.5 0.100 10.0 0.075 9.5 0.050 -25 0 25 50 75 100 125 150 9.0 -25 0 25 50 75 100 125 150 Temp Temp Figure 1. Start Up Current vs. Temp Figure 2. Operating Current vs. Temp 16.0 [V] Start Threshold Voltage vs. Temp 10.0 [V] Stop Threshold Voltage vs. Temp 15.5 9.5 15.0 9.0 14.5 8.5 14.0 -25 0 25 50 75 100 125 150 8.0 -25 0 25 50 75 100 125 150 Temp Temp Figure 3. Start Threshold Voltage vs. Temp Figure 4. Stop Threshold Voltage vs. Temp [KHz] 28 27 Initial Freqency vs. Temp 96.0 [%] Maximum Duty vs. Temp 95.5 26 25 24 94.5 23 22 -25 0 25 50 75 100 125 150 94.0 -25 0 25 50 75 100 125 150 95.0 Temp Temp Figure 5. Initial Freqency vs. Temp Figure 6. Maximum Duty vs. Temp 6 FS6S1565RB Typical Performance Characteristics (Continued) 0.45 0.40 0.35 [V] Feedback Offset Voltage vs. Temp 1.1 [mA] Feedback Source Current vs. Temp 1.0 0.9 0.30 0.25 0.20 -25 0.8 0 25 50 75 100 125 150 0.7 -25 0 25 50 75 100 125 150 Temp Temp Figure 7. Feedback Offset Voltage vs. Temp Figure 8. Feedback Source Current vs. Temp [V] ShutDown Feedback Voltage vs. Temp 7.60 2.4 [uA] ShutDown Delay Current vs. Temp 2.2 7.55 2.0 7.50 1.8 7.45 1.6 -25 0 25 50 75 100 125 150 7.40 -25 0 25 50 75 100 125 150 Temp Temp Figure 9. ShutDown Delay Current vs. Temp Softstart Voltage vs. Temp Figure 10. ShutDown Feedback Voltage vs. Temp OverVoltage Protection vs. Temp 5.02 [V] [V] 31.0 5.01 30.5 5.00 30.0 4.99 29.5 4.98 -25 0 25 50 75 100 125 150 29.0 -25 0 25 50 75 100 125 150 Temp Temp Figure 11. Softstart Voltage vs. Temp Figure 12. OverVoltage Protection vs. Temp 7 FS6S1565RB Typical Performance Characteristics (Continued) [V] 11.2 Burst Mode Low Voltage vs. Temp 12.2 [V] Burst Mode High Voltage vs. Temp 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 11.8 -25 0 25 50 75 100 125 150 Temp Temp Figure 13. Burst Mode Low Voltage vs. Temp Figure 14. Burst Mode High Voltage vs. Temp [V] Burst ModeEnable Voltage vs. Temp [KHz] 54 Burst Mode Freqency vs. Temp 1.3 1.2 52 1.1 50 1.0 0.9 48 0.8 46 -25 0 25 50 75 100 125 150 0.7 -25 0 25 50 75 100 125 150 Temp Temp Figure 15. Burst Mode Freqency vs. Temp Softstart Voltage vs. Temp Figure 16. Burst ModeEnable Voltage vs. Temp [V] 31.0 5.02 [V] OverVoltage Protection vs. Temp 5.01 30.5 5.00 30.0 4.99 29.5 4.98 -25 0 25 50 75 100 125 150 29.0 -25 0 25 50 75 100 125 150 Temp Temp Figure 17. Softstart Voltage vs. Temp Figure 18. OverVoltage Protection vs. Temp 8 FS6S1565RB Typical Performance Characteristics (Continued) [V] 11.2 Burst Mode Low Voltage vs. Temp 12.2 [V] Burst Mode High Voltage vs. Temp 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 11.8 -25 0 25 50 75 100 125 150 Temp Temp Figure 19. Burst Mode Low Voltage vs. Temp Burst Mode Freqency vs. Temp Figure 20. Burst Mode High Voltage vs. Temp [V] Burst ModeEnable Voltage vs. Temp [KHz] 54 1.3 1.2 52 1.1 50 1.0 0.9 48 0.8 46 -25 0 25 50 75 100 125 150 0.7 -25 0 25 50 75 100 125 150 Temp Temp Figure 21. Burst Mode Freqency vs. Temp Figure 22. Burst ModeEnable Voltage vs. Temp [A] Burst Mode Peak Current vs. Temp 1.00 [A] 10.0 Over Current Limit vs. Temp 0.95 9.8 0.90 9.6 0.85 0.80 -25 0 25 50 75 100 125 150 9.4 -25 0 25 50 75 100 125 150 Temp Temp Figure 23. Burst Mode Peak Current vs. Temp Figure 24. Over Current Limit vs. Temp 9 FS6S1565RB Package Dimensions TO-3P-5L 10 FS6S1565RB Package Dimensions TO-3P-5L (Forming) 11 FS6S1565RB Ordering Information Product Number FS6S1565RB-TU FS6S1565RB-YDTU TU : Non Forming Type YDTU : Forming Type Package TO-3P-5L TO-3P-5L(Forming) Marking Code 6S1565RB BVdss 650V Rds(on) 0.5 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 10/17/01 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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