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| 2N6400 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. * Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Blocking Voltage to 800 Volts * Device Marking: Logo, Device Type, e.g., 2N6400, Date Code *MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = to 125C, Sine Wave 50 to 60 Hz; Gate Open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 Symbol VDRM, VRRM 50 100 200 400 600 800 IT(RMS) IT(AV) ITSM 16 10 160 A A A 1 2 3 Value Unit Volts 4 Preferred Device http://onsemi.com SCRs 16 AMPERES RMS 50 thru 800 VOLTS G A K *40 On-State RMS Current (180 Conduction Angles; TC = 100C) Average On-State Current (180 Conduction Angles; TC = 100C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 s, TC = 100C) Forward Average Gate Power (t = 8.3 ms, TC = 100C) Forward Peak Gate Current (Pulse Width 1.0 s, TC = 100C) Operating Junction Temperature Range Storage Temperature Range *Indicates JEDEC Registered Data. TO-220AB CASE 221A STYLE 3 PIN ASSIGNMENT 1 Cathode Anode Gate Anode 145 20 0.5 2.0 - 40 to +125 - 40 to +150 A2s Watts Watts A C C 2 3 4 I2t PGM PG(AV) IGM TJ Tstg ORDERING INFORMATION Device 2N6400 2N6401 2N6402 Package TO220AB TO220AB TO220AB TO220AB TO220AB TO220AB Shipping 500/Box 500/Box 500/Box 500/Box 500/Box 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2N6403 2N6404 2N6405 Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 1999 1 February, 2000 - Rev. 1 Publication Order Number: 2N6400/D 2N6400 Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC TL Max 1.5 260 Unit C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25C TJ = 125C IDRM, IRRM -- -- -- -- 10 2.0 A mA ON CHARACTERISTICS * Peak Forward On-State Voltage (ITM = 32 A Peak, Pulse Width 1 ms, Duty Cycle 2%) * Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) * Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms) * Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM) Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM) TC = 25C TJ = +125C TC = 25C TC = -40C TC = 25C TC = -40C VGD TC = +125C TC = 25C *TC = -40C tgt tq -- -- 15 35 -- -- IH 0.2 -- -- -- -- 18 -- 1.0 -- 40 60 -- s s mA VTM IGT VGT -- -- 0.7 -- 1.5 2.5 Volts -- -- -- -- 9.0 -- 1.7 30 60 Volts mA Volts DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform) *Indicates JEDEC Registered Data. dv/dt TJ = +125C -- 50 -- V/s http://onsemi.com 2 2N6400 Series Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) 128 TC, MAXIMUM CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER (WATTS) 124 120 116 112 dc 108 104 100 0 7.0 5.0 6.0 1.0 2.0 3.0 4.0 8.0 9.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 10 = 30 180 60 90 120 = CONDUCTION ANGLE 16 14 12 60 10 8.0 6.0 4.0 2.0 0 0 = 30 TJ 125C 120 180 90 dc = CONDUCTION ANGLE 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 10 Figure 1. Average Current Derating Figure 2. Maximum On-State Power Dissipation http://onsemi.com 3 2N6400 Series 200 100 70 i TM , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMPS) 50 30 20 TJ = 25C 10 7.0 5.0 3.0 2.0 160 I TSM , PEAK SURGE CURRENT (AMP) 1 CYCLE 125C 150 1.0 0.7 0.5 0.3 0.2 0.4 1.6 2.0 2.4 2.8 4.0 0.8 1.2 3.2 3.6 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 4.4 140 130 TJ = 125C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 1.0 2.0 3.0 4.0 6.0 8.0 10 120 110 NUMBER OF CYCLES Figure 3. On-State Characteristics Figure 4. Maximum Non-Repetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 50 20 30 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k ZJC(t) = RJC * r(t) Figure 5. Thermal Response http://onsemi.com 4 2N6400 Series TYPICAL CHARACTERISTICS 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 PULSE WIDTH (ms) 50 100 200 100 I GT, GATE TRIGGER CURRENT (mA) OFF-STATE VOLTAGE = 12 V RL = 50 W TJ = -40C i GT, PEAK GATE CURRENT (mA) 10 25C 125C 1 -40 -25 -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125 Figure 6. Typical Gate Trigger Current versus Pulse Width Figure 7. Typical Gate Trigger Current versus Junction Temperature 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 125 100 IH , HOLDING CURRENT (mA) 10 1 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 8. Typical Gate Trigger Voltage versus Junction Temperature Figure 9. Typical Holding Current versus Junction Temperature http://onsemi.com 5 2N6400 Series PACKAGE DIMENSIONS TO-220AB CASE 221A-07 ISSUE Z -T- B F C SEATING PLANE T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 4 Q 123 A U K H Z L V G D N J R STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 6 2N6400 Series Notes http://onsemi.com 7 2N6400 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6400/D |
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