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Ordering number : ENN6783A 2SK2682LS N-Channel Silicon MOSFET 2SK2682LS Ultrahigh-Speed Switching Applications Features * * * Package Dimensions unit : mm 2078C [2SK2682LS] 10.0 3.2 3.5 7.2 Low ON-resistance. High-speed diode. Micaless package facilitating mounting. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 123 2.4 0.7 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Ratings 250 30 13 52 2 35 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 IG=100A, VGS=0 VDS=250V, VGS=0 VGS=25V, VDS=0 VDS=10V, ID=1mA Ratings min 250 30 1.0 10 2.0 3.0 typ max Unit V V mA A V 0.6 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3431 / N1500 TS IM TA-3044 No.6783-1/4 2SK2682LS Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Symbol yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD trr Conditions VDS=10V, ID=6A ID=6A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=12A, VGS=0 IS=12A, di/dt=100A/s Ratings min 6 typ 10 200 1290 300 125 22 66 320 105 1.0 160 1.5 270 max Unit S m pF pF pF ns ns ns ns V ns Marking : K2682 Switching Time Test Circuit VDD=100V VIN 10V 0V VIN PW=10s D.C.1% ID=6A RL=16.7 D VOUT G P.G 50 2SK2682LS S 20 18 16 ID -- VDS 8V 20 18 16 ID -- VGS VDS=10V Drain Current, ID -- A V 6V 5V Drain Current, ID -- A 10 14 12 10 8 6 4 2 0 0 1 14 12 10 8 6 4 2 75 Tc= 2.5 3.0 3.5 4.0 4.5 C 0 2.0 VGS=3V 2 3 4 5 IT02616 --25 5.0 4V C 25C 5.5 6.0 Drain-to-Source Voltage, VDS -- V 500 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 500 IT02617 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 450 400 350 300 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 Tc=25C ID=6A VGS=10V ID=6A 400 300 200 100 18 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT02618 Case Temperature, Tc -- C IT02619 No.6783-2/4 2SK2682LS 100 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10000 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Ciss, Coss, Crss -- pF Ciss C --25 Tc= C C 25 75 1000 7 5 3 2 100 7 5 3 2 10 Coss Crss 10 2 3 0 5 10 15 20 25 30 IT02621 Drain Current, ID -- A 1000 7 IT02620 100 7 5 3 2 SW Time -- ID Drain-to-Source Voltage, VDS -- V ASO Switching Time, SW Time -- ns 5 3 2 VDD=100V VGS=10V td (off) IDP=52A <10s 100s Drain Current, ID -- A ID=13A 1m s 10 100 7 5 3 2 tf tr td(on) 10 7 5 m s 10 s 0m DC 3 2 1.0 7 5 3 2 op er ati on Operation in this area is limited by RDS(on). Tc=25C Single pulse 23 5 7 1.0 23 5 7 10 23 5 7 100 23 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 0.1 Drain Current, ID -- A 2.5 IT02622 40 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 5 71000 IT02623 PD -- Tc Allowable Power Dissipation, PD -- W 35 30 25 20 15 10 5 0 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT02624 Case Temperature, Tc -- C IT02625 No.6783-3/4 2SK2682LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.6783-4/4 |
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