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PD - 93858
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM9260 100K Rads (Si) IRHM93260 300K Rads (Si) RDS(on) 0.160 0.160
IRHM9260 JANSR2N7426 200V, P-CHANNEL REF: MIL-PRF-19500/660
RAD-Hard
TM
HEXFET TECHNOLOGY
(R)
ID QPL Part Number -27A JANSR2N7426 -27A JANSF2N7426
TO-254AA
International Rectifier's RAD-HardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n n
Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight -27 -17 -108 250 2.0 20 500 -27 25 -9.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10s) 9.3 (Typical)
g
For footnotes refer to the last page
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1
11/27/00
IRHM9260, JANSR2N7426
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
-- -0.28 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.160 -4.0 -- -25 -250 -100 100 300 60 70 37 83 140 172 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -17A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -17A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -27A VDS = -100V VDD = -100V, ID = -27A RG = 2.35
BVDSS Drain-to-Source Breakdown Voltage -200 BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 13 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA
nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
6220 903 150
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -27 -108 -3.3 600 10
Test Conditions
A
V ns C Tj = 25C, IS = -27A, VGS = 0V Tj = 25C, IF = -27A, di/dt 100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.50 0.21 -- -- 48 C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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Radiation Characteristics
IRHM9260, JANSR2N7426
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS I DSS RDS(on) RDS(on) V SD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254) Diode Forward Voltage
100K Rads(Si)1
300K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -160V, VGS =0V VGS = -12V, ID =-17A VGS = -12V, ID = -17A VGS = 0V, IS = -27A
Min -200 -2.0 -- -- -- -- -- --
Max -- -4.0 -100 100 - 25 0.154 0.160 -3.3
Min -200 -2.0 -- -- -- -- -- --
Max -- -5.0 -100 100 -25 0.154 0.160 -3.3
1. Part number IRHM9260 2. Part number IRHM93260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET MeV/(mg/cm2)) 28.0 36.8 Energy (MeV) 285 305 Range (m) 43.0 39.0 VDS (V) @VGS=0V @VGS=5V @VGS=10V -200 -200 -200 -200 -200 -125 @VGS=15V -200 -75 @VGS=20V -- --
-250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9260, JANSR2N7426
Pre-Irradiation
1000
100
-5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
1000
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
-5.0V
20s PULSE WIDTH T = 150 C
J 1 10 100
10 1
10
20s PULSE WIDTH TJ = 25 C
100
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -27A
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
1.5
100
TJ = 150 C
1.0
0.5
10 5 6 7 8
V DS = -50V 20s PULSE WIDTH 10 11 9 12
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHM9260, JANSR2N7426
10000
8000
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -27A
16
VDS = 160V VDS = 100V VDS = 40V
C, Capacitance (pF)
6000
Ciss
12
4000
8
2000
C oss C rss
4
0 1 10 100
0 0 50 100
FOR TEST CIRCUIT SEE FIGURE 13
150 200 250 300
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
TJ = 150 C
10
-ID , Drain Current (A) I
100
100
100us 1ms 10ms
TJ = 25 C
1
10
0.1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0
1
TC = 25 C TJ = 150 C Single Pulse
10 100
1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHM9260, JANSR2N7426
Pre-Irradiation
30
V DS VGS RG
RD
25
D.U.T.
+
-ID , Drain Current (A)
20
-12V
15
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1 0.0001 0.001 0.01 10
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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-
V DD
Pre-Irradiation
IRHM9260, JANSR2N7426
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
1200
RG
D .U .T.
IA S
1000
VD D A D R IV E R
ID -12A -17A BOTTOM -27A TOP
-20V -12V
800
tp
0.01
600
15V
400
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150
IAS
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
-12V 12V
.2F .3F
VG
VGS
-3mA
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
QGS
QGD
D.U.T.
-
-12 V
VDS
7
IRHM9260, JANSR2N7426
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD =-50V, starting TJ = 25C, L= 3.3mH, Peak IL=- 27A, VGS = -12V ISD - 27A, di/dt -280A/s, VDD - 200V, TJ 150C Pulse width 300 s; Duty Cycle 2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions -- TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 0.12 [.005]
1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665] 31.40 [1.235] 30.35 [1.195] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
22.73 [.895] 21.21 [.835]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B R 1.52 [.060]
17.40 [.685] 16.89 [.665]
B
4.82 [.190] 3.81 [.150] 1.14 [.045] 0.89 [.035] 0.36 [.014] B A PIN AS S IGNMENT S 1 = DRAIN 2 = S OURCE 3 = GAT E
4.06 [.160] 3.56 [.140] 3X
3X 3.81 [.150]
1.14 [.045] 0.89 [.035] 0.36 [.014] B A PIN AS S IGNMENT S 1 = DRAIN 2 = S OURCE 3 = GAT E
3.81 [.150]
3.81 [.150]
NOT ES :
2X
2X NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 3. CONT ROLLING DIMENS ION: INCH. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA.
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 3. CONT ROLLING DIMENS ION: INCH. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA BEF ORE LEADF ORMING.
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
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8
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