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MITSUBISHI SEMICONDUCTOR M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION (TOP VIEW) NC 1 IN1 2 IN2 3 IN3 4 INPUTS IN4 5 16 VCC 15 O1 14 O2 13 O3 12 O4 11 O5 10 O6 9 COM COMMON OUTPUTS FEATURES q Medium breakdown voltage (BVCEO 20V) q High-current driving (Ic(max) = 700mA) q With output clamping diodes q Wide operating temperature range (Ta = -20 to +75C) IN5 6 IN6 7 GND 8 Outline 16P4(P) NC : No connection APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and drives of thermal printer CIRCUIT SCHEMATIC 200 VCC COM 2k INPUT OUTPUT FUNCTION The M54539P have six circuits consisting of NPN transistors. Resistance of 2k is connected to the inputs. The output transistor emitters are connected to the GND pin (pin 8). A spick-killer clamping diode is provided between each collector and COM pin (pin 9), VCC is connected to pin 16. The collector current is 700 mA maximum. Collector-emitter supply voltage is 20V maximum. GND 20k 2k The six circuits share the VCC, COM and GND. The diodes shown by broken line are parasite diodes and must not be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI VR IF Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ratings 10 -0.5 ~ +20 700 -0.5 ~ +10 20 700 350 1.47 -20 ~ +75 -55 ~ +125 Unit V V mA V V mA W C C Aug. 1999 Input voltage Clamping diode reverse voltage Clamping diode forward current Power dissipation Operating temperature Storage temperature Pulse Width 35ms, Duty Cycle 5% Ta = 25C, when mounted on board MITSUBISHI SEMICONDUCTOR M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VCC VO Supply voltage Output voltage VCC = 6.5V, The three outputs conducting simultaneously Collector current Percent duty cycle less than 20% VCC = 6.5V, The three outputs per channel conducting simultaneously Percent duty cycle less than 90% "H" input voltage IC 450mA "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 3 0 0 0 3 0 Limits typ 5 -- -- -- -- -- max 7 20 700 Unit V V IC mA 200 6 0.3 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II IR VF ICC hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions VCC = 7V, ICEO = 100A Limits min 20 -- -- -- -- -- -- 3000 typ+ -- 0.46 0.2 0.75 -- 1.5 27.5 8000 max -- 0.8 0.45 1.4 100 2.7 50 -- Unit V V mA A V mA -- Collector-emitter breakdown voltage VI = 3V, VCC = 5V, IC = 450mA Collector-emitter saturation voltage VI = 3V, VCC = 5V, IC = 200mA Input current Clamping diode reverse current Clamping diode forward voltage Supply current DC amplification factor VCC = 7V, VI = 3.2V VR = 20V IF = 350mA VCC = 7V, VI = 3.2V (Per operating one circuit) VCE = 4V, VCC = 6V, IC = 300mA, Ta = 25C + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 16 1000 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device OPEN PG 50 CL OUTPUT VO TIMING DIAGRAM 50% RL 50% INPUT OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 3VP-P (2) Input-output conditions : RL = 22.5, VO = 10V, VCC = 5V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug. 1999 MITSUBISHI SEMICONDUCTOR M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 800 Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 Collector current Ic (mA) 600 1.0 400 VI = 3V VCC = 5V Ta = 75C Ta = 25C Ta = -20C 0.5 200 0 0 25 50 75 100 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics 800 1 800 Duty-Cycle-Collector Characteristics Collector current Ic (mA) Collector current Ic (mA) 600 2 3 65 4 600 1 400 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneouslyoperated circuit. *VCC = 6.5V *Ta = 25C 400 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneouslyoperated circuit. *VCC = 6.5V *Ta = 75C 2 3 200 65 4 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 105 7 5 3 VCC = 6V VCE = 4V Ta = 75C Ta = 25C Ta = -20C Duty cycle (%) Grounded Emitter Transfer Characteristics 800 DC amplification factor hFE Collector current Ic (mA) 600 VCC = 6V VCE = 4V Ta = 75C Ta = 25C Ta = -20C 104 7 5 3 400 200 103 1 10 3 5 7 102 3 5 7 103 0 0 0.5 1.0 1.5 2.0 2.5 Collector current Ic (mA) Input voltage VI (V) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics 5 VCC = 7V Ta = 75C Ta = 25C Ta = -20C Supply Current Characteristics 50 VI = 3.2V Ta = 75C Ta = 25C Ta = -20C 3 Supply current Icc (mA) 4 Input current II (mA) 40 30 2 20 1 10 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Input voltage VI (V) Supply voltage VCC (V) Clamping Diode Characteristics 800 Forward bias current IF (mA) Ta = 75C Ta = 25C Ta = -20C 600 400 200 0 0 0.5 1.0 1.5 2.0 2.5 Forward bias voltage VF (V) Aug. 1999 |
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