View BLF1049_292930.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D379
BLF1049 UHF power LDMOS transistor
Preliminary specification 2001 Nov 27
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing common mode inductance * Designed for base station applications (800 MHz to 1 GHz).
handbook, halfpage
BLF1049
PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
APPLICATIONS * Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-AB f (MHz) 960 VDS (V) 28 PL (dBm) 50 Gp (dB) >16 D (%) typ. 25 D (%) >49
Top view
2
3
MBK394
Fig.1 Simplified outline.
MODE OF OPERATION EDGE Note
f (MHz) 869
VDS (V) 28
PL avg (W) 45
Gp (dB) typ. 17
ACPR (dB) typ. -65 (1)
1. ACPR 400 kHz at BW = 30 kHz CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Nov 27
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature Th = 25 C CONDITIONS - - - -65 - MIN.
BLF1049
MAX. 75 15 700 +150 200 V V W
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 3 mA VDS = 10 V; ID = 300 mA VGS = 0; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 10 A VGS = 9 V; ID = 10 A MIN. 75 4 - 45 - - - TYP. - - - - - 9 60 MAX. - 5 1 - 1 - - UNIT V V A A A S m PARAMETER thermal resistance from junction to case CONDITIONS Th = 25 C; Ptot = 700 W; note 1 VALUE 0.41 UNIT K/W
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth j-h = 0.41 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB (1-tone) f (MHz) 960 VDS (V) 28 IDQ (mA) 550 PL (dBm) 50 Gp (dB) >16 D (%) typ. 25 D (%) >49
MODE OF OPERATION EDGE Note
f (MHz) 869
VDS (V) 28
PL avg (W) 45
IDQ (mA) 800
Gp (dB) typ. 17
ACPR (dB) typ. -65 (1)
1. ACPR 400 kHz at BW = 30 kHz Ruggedness in class-AB operation The BLF1049 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 960 MHz at rated load power. 2001 Nov 27 3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1049
20 GP (dB)
GP
80 D (%) 60
20 GP (dB)
GP
40 D (%) 30
15
15
10
40
10
D
20
5 D 0 30 35 40 45 50 PL (dBm)
20
5
10
0
0 35 40 45 50 PL avg (dBm)
0
VDS = 28 V; IDQ = 550 mA; PL = 50 dBm; T h 25 C
VDS = 28 V; IDQ = 800 mA; f = 869 MHz; measured under EDGE conditions
Fig.2
Power gain and drain efficiency as functions of load power; typical values.
Fig.3
Power gain and drain efficiency as functions of load power; typical values.
2 EVMmax (%) 1.6
0 ACPR (dBc) -20
1.2 -40 0.8 -60 0.4
0 35 40 45 50 PL avg (dBm)
-80 35 40 45 50 PL avg (dBm)
VDS = 28 V; IDQ = 800 mA; f = 869 MHz; measured under EDGE conditions
VDS = 28 V; IDQ = 800 mA; f = 869 MHz; f = 400 kHz; measured under EDGE conditions
Fig.4
Maximum EVM as a function of the average load power, typical values.
Fig.5
Intermodulation distortion as a function of the average load power, typical values.
2001 Nov 27
4
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1049
2 Zi () ri 1
2 ZL () 1
RL
0
0
-1 xi
-1
XL
-2 825
875
925
975 f (MHz)
-2 825
875
925
975 f (MHz)
VDS = 28 V; IDQ = 550 mA; PL = 50 dBm; T h 25 C
VDS = 28 V; IDQ = 550 mA; PL = 50 dBm; T h 25 C
Fig.6
Source impedance as a function of frequency (series components); typical values.
Fig.7
Load impedance as a function of frequency (series components); typical values.
WivhAD G 8! R 8( 8" 8# S G" G G 8 G! G# 8$ G% G& G' G G 8" G$ 8' G" 8' G % # G$ 8 8& Wq D 8% G( R! 8& ! 8$
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 6.15), thickness 25 mils. The other side is unetched and serves as a ground plane.
2001 Nov 27
Fig.8 Component layout for 800 to 1000 MHz class-AB broadband test circuit. 5
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
List of components (see Fig 5) COMPONENT C1, C6, C13, C14, C15, C16, C17 C2, C3 C4, C9, C10, C11, C12 C5, C18 C7 C8 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 L13 L14 L15, L16 R1 Q1 Q2 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION VALUE DIMENSIONS
BLF1049
CATALOGUE NO.
multilayer ceramic chip capacitor; note 1 68 pF
multilayer ceramic chip capacitor tantalum capacitor air trimmer capacitor multilayer ceramic chip capacitor stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 Ferrox cube stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 variable resistor 7808 voltage regulator BLF1049 LDMOS transistor
100 nF 10 F 4.6 pF 11 pF 204 x 36 mils 253 x 36 mils 210 x 188 mils 94 x 36 mils 340 x 36 mils 110 x 420 mils 319 x 700 mils 1724 x 36 mils 721 x 1106 mils 389 x 210 mils 1470 x 131 mils 470 x 170 mils 92 x 36 mils 165x 36 mils 1 k
2. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (r = 6.15); thickness 25 mils.
2001 Nov 27
6
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
PACKAGE OUTLINE
BLF1049
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.99 0.186 0.157 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-10-13 99-12-28
2001 Nov 27
7
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BLF1049
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Nov 27
8
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
SCA73
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603516/05/pp9
Date of release: 2001
Nov 27
Document order number:
9397 750 09129

▲Up To Search▲

Price & Availability of BLF1049

	To Download BLF1049 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .