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| ILH200 HERMETIC PHOTOTRANSISTOR DUAL CHANNEL OPTOCOUPLER FEATURES * Operating Temperature Range, -55C to +125C * Current Transfer Ratio Guaranteed from -55C to +100C Ambient Temperature Range * High Current Transfer Ratio at Low Input Current * Isolation Test Voltage, 3000 VDC * Two Isolated Channels per Package * Standard 8 Pin DIP Package DESCRIPTION The ILH200 is designed especially for hi-rel applications requiring optical isolation with high current transfer ratio and low saturation VCE. Each channel of the optocoupler consists of a light emitting diode and a NPN silicon phototransistor mounted and coupled in an 8 pin hermetically sealed DIP package. The low input current makes the ILH200 well suited for direct CMOS to LSTTL/TTL interfaces. Dimensions in inches (mm) .390.005 (9.91.13) 8 7 6 5 .320 (8.13) max. 4 .150 (3.81) max. .300 (7.62) typ. Siemens XXX XXXX XXYY .020 (.51) min. 1 2 3 .010.002 (.25.05) Anode 1 8 Emitter .018.002 (.46.05) .100 .010 (2.54.25) .125 (3.18) min. Cathode Cathode 2 3 7 Collector Collector 6 Anode 4 5 Emitter Maximum Ratings Emitter (per channel) Reverse Voltage ................................................................................6.0 V Forward Current ..............................................................................60 mA Peak Forward Current(1) ......................................................................1 A Power Dissipation...........................................................................75 mW Derate Linearly from 25C ......................................................0.75 mW/C Detector (per channel) Collector-Emitter Voltage ...................................................................70 V Emitter-Collector Voltage .....................................................................7 V Continuous Collector Current ..........................................................50 mA Power Dissipation.........................................................................100 mW Derate Linearly from 25C ........................................................1.0 mW/C Package Input to Output Isolation Test Voltage(2 ) ...................................3000 VDC Storage Temperature Range ..........................................-65C to +150C Operating Temperature Range.......................................-55C to +125C Junction Temperature......................................................................150C Soldering Time at 240C, 1.6 mm from case ................................ 10 sec. Power Dissipation.........................................................................350 mW Derate Linearly from 25C ........................................................3.5 mW/C Notes: 1. Values applies for PW1 ms, PRR300 pps. 2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. TA=25C and duration=1 second, RH=45%. 5-1 Characteristics (Each Channel), TA=25C, unless otherwise specified Parameter Emitter Forward Voltage Reverse Breakdown Voltage Reverse Current Capacitance Thermal Resistance Detector Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Capacitance Thermal Resistance Coupled Characteristic -55C to 100C Saturated Current Transfer Ratio Current Transfer Ratio Collector-Emitter Isolation and Insulation Common Mode Rejection, Output High Common Mode Rejection, Output High Package Capacitance Insulation Resistance Leakage Current, Input-Output CMH CML CIO RIO IIO 1011 1000 1000 2000 2000 1.5 1014 10 V/s V/s pF W A VCM=500 Vp-p, VCC=5 V, RL=1 K, IF=0 mA VCM=500 Vp-p, V=5 V, RL=1 K, IF=10 mA VIO=0 V, 1 MHz VIO=500 VDC Relative Humidity 50%, VIO 3000 VDC, 5 sec. CTR(sat) CTRce 70 100 210 300 250 450 % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=10 V VCE(sat) ICEO CCE RTH 0.25 5 6.8 220 0.4 50 V nA pF C/W IB=20 A, ICE=1 mA VCE=10 V VCE=5 V, f=1 MHz Junction to Lead VF VBR IR CJ RTH 6 0.01 20 220 10 1.46 1.7 V V A pF C/W IF=60 mA IR=10 A VR=6 V VF=0 V, f=1 MHz Junction to Lead Symbol Min. Typ. Max. Unit Condition Typical Switching Speeds, TA=25C Non-Saturated Switching Delay Rise Storage Fall Propagation-High to Low Propagation-Low to High Saturated Switching(1) Delay Rise Storage Fall Propagation-High to Low Propagation-Low to High Symbol td tr ts tf tpHL tpLH Symbol td tr ts tf tpHL tpLH Typ. 0.8 2 0.4 2 1 1.5 Typ. 0.7 1 13.5 12 1.4 15 Max. 2 5 1.5 5 3 4 Max. 2 3 30 30 5 40 Unit s s s s s s Unit s s s s s s VCE=0.4 V RL=1 K IF=10 mA VCC=5 V, VTH=1.5 V Test Condition VCC=5 V RL=75 IF=10 mA 50% of Vpp Test Condition ILH200 5-2 Figure 1. Forward current versus forward voltage and temperature g p IF - Forward Current - mA 100 25C 125C Figure 5. Normalized saturated current transfer ratio versus temperature and LED current p NCTRce(sat) - Normalized Saturated CTR 0.8 0.7 0.6 0.5 0.4 0.5 mA 1 mA 5 mA 10 mA Vce = 0.4 V 10 1 -55C -25C 0C 85C .1 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage - V 1.8 0.3 Normalized to Ta =25C Vce = 10 V, IF = 10 mA 0.2 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 Figure 2. Peak LED current versus duty factor refresh rate and temperature IF(Pk) - Peak LED Current - A Figure 6. Normalized saturated current transfer ratio versus temperature and LED current 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 Normalized to: Ta = 25C Vce = 10 V , IF = 10 mA 60 mA 30 mA 20 mA 10 mA Vce = 0.4 V 1.2 10KHz Tj(max) = 150C NCTR(sat)- Normalized Saturated CTR 1.0 1KHz 0.8 0.6 0.4 0.2 0.0 100 Hz 25C 10KHz 1KHz 100Hz 125C 60 mA 0 20 40 60 80 DF - Duty Factor - % 100 Figure 3. Normalized non-saturated current transfer ratio versus temperature and LED current 1.2 Figure 7. Collector-emitter current versus temperature and LED current 100 Ice - Collector Current - mA NCTRce - Normalized CTR 1.0 0.8 Normalized to: Ta = 25 C Vce = 10V, IF = 10 mA 10 mA Vce = 10 V 10 mA 5 mA 1 mA 10 1 mA 0.6 0.4 0.2 -50 .5 mA 5 mA 1 0.5 mA .1 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 Figure 4. Normalized non-saturated current transfer ratio versus temperature and LED current 1.1 Figure 8. Collector-emitter current versus temperature and LED current 200 Ice - Collector Current - mA NCTRce - Normalized CTR Vce = 10 V 1.0 0.9 0.8 0.7 10 mA 20 mA Vce = 10 V 150 60 mA 100 50 0 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 ILH200 30 mA 20 mA 10 mA 30 mA 0.6 0.5 Normalized to: Ta = 25C Vce = 10V, IF = 10 mA 0.4 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 60 mA 125 5-3 Figure 9. Saturated collector-emitter current versus temperature and LED current 100 Ice - Collector Current - mA Figure 13. Propagation delay versus temperature and collector load resistance for IF=10 mA 1000 Propagation Delay - s Vcc = 5.25V, Rbe = open, Vth = 1.5V 47K tpLH 10 5 mA 1 mA 100 10K tpLH 2.2K tpLH 10 2.2K tpHL 1 -50 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 10 mA 20 mA 30 mA 60 mA 1 0.5 mA Vce = 0.4 V .1 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 Figure 10. Saturated collector-emitter current versus temperature and LED current Ice - Collector Current - mA 100 10 mA 5 mA 1 mA 0.5 mA .1 -50 -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 Vce = 0.4 V 10 Figure 14. Propagation delay versus temperature and collector load resistance for IF=20 mA 1000 Vcc = 5.25V, Rbe = open, Vth = 1.5V 47K tpLH 100 10K tpLH 2.2K tpLH 10 2.2K tpHL 1 -50 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 1 Figure 11. Collector-emitter leakage current versus temperature Iceo - Collector-Emitter - nA Figure 15. Common mode transient rejection 25000 Rate of Common Mode Voltage Change-V/s 10 5 4 10 3 10 10 2 10 1 10 0 10 -1 10 -2 -20 Propagation Delay - s 20000 15000 10000 5000 Ta=25 C, Vcc=5.0V If(low)=10 ma, RL=1k If(high)=0 ma WORST CASE Vce = 10V TYPICAL CMR(low) CMR(high) 0 20 40 60 80 100 Ta - Ambient Temperature - C 0 1000 1200 1400 1600 1800 2000 2200 Vcm-comm on Mode Voltage (v) Figure 12. Propagation delay versus temperature and collector load resistance for IF=5 mA 1000 Propagation Delay - s Figure 16. Saturated switching IF RL VO VCC Vcc = 5.25V, Rbe = open, Vth = 1.5V 47K tpLH 100 10K tpLH 2.2K tpLH 10 2.2K tpHL 1 -50 10K tpHL 47K tpHL -25 0 25 50 75 100 Ta - Ambient Temperature - C 125 VO t PHL t PLH VTH =1.5 V ILH200 5-4 |
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