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| SOT-23 MULTILED(R), Diffused LU S250, LV S260, LW S260 Besondere Merkmale q q q q q q q Features q q q q q q q colored, diffused package extreme wide-angle LED for use as optical indicator suitable for all SMT assembly and soldering methods both colors can be controlled separately available taped on reel (8 mm tape) load dump resistant acc. to DIN 40839 Typ Type Emissionsfarbe Color of Emission Gehausefarbe Color of Package Lichtstarke Luminous Intensity IF = 10 mA IV (mcd) 0.4 0.4 Bestellnummer Ordering Code LU S250-DO LV S260-DO LW S260-DO super-red/green super-red/ super-red green/green colorless diffused 0.4 red diffused green diffused Q62703-Q1642 Q62703-Q2067 Q62703-Q1038 Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 1 11.96 VS006723 eingefarbtes, diffuses Gehause extrem weitwinklig als optischer Indikator einsetzbar fur alle SMT-Bestuck- und Lottechniken geeignet beide Farben getrennt ansteuerbar gegurtet (8-mm-Filmgurt) Storimpulsfest nach DIN 40838 LU S250, LV S260, LW S260 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air 1) 1) 1) Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 5 100 V mW Rth JA 750 K/W Auf Platine gelotet: Lotflache 16 cm2. Soldered on PC board: pad size 16 cm2. Notes Die angegebenen Grenzdaten gelten fur einen Chip. The stated maximum ratings refer to one chip. Semiconductor Group 2 LU S250, LV S260, LW S260 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 20 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 s, RL = 50 Symbol Symbol super-red (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 635 Werte Values green 565 nm Einheit Unit 628 570 nm 45 25 nm 140 2.0 2.6 0.01 10 12 140 2.0 2.6 0.01 10 15 Grad deg. V V A A pF (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 (typ.) tr (typ.) tf 300 150 450 200 ns ns Semiconductor Group 3 LU S250, LV S260, LW S260 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 4 LU S250, LV S260, LW S260 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 5 LU S250, LV S260, LW S260 Wellenlange der Strahlung Wavelength at peak emission peak = f (TA), IF = 20 mA Dominantwellenlange Dominant wavelength dom = f (TA), IF = 20 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 6 LU S250, LV S260, LW S260 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Anschlubelegung: Pin configuration: (Draufsicht) (top view) Semiconductor Group 7 GSO06866 |
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