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MBR120ESFT1 Surface Mount Schottky Power Rectifier
Plastic SOD-123 Package
. . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. These state-of-the-art devices have the following features:
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SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
* * * * * *
Guardring for Stress Protection Low Leakage 150C Operating Junction Temperature Epoxy Meets UL94, V0 at 1/8 Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C ESD Ratings: Human Body Model, 3B
SOD-123FL CASE 498 PLASTIC
DEVICE MARKING Mechanical Characteristics
* Reel Options: MBR120ESFT1 = 3,000 per 7 reel/8 mm tape * * * * * *
Reel Options: MBR120ESFT3 = 10,000 per 13 reel/8 mm tape Device Marking: L2E Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds
L2ED L2E D = Specific Device Code = Date Code
ORDERING INFORMATION
Device Package Shipping 3000/Tape & Reel
MBR120ESFT1 SOD-123FL
MBR120ESFT3 SOD-123FL 10,000/Tape & Reel
(c) Semiconductor Components Industries, LLC, 2002
1
October, 2002 - Rev. 1
Publication Order Number: MBR120ESFT1/D
MBR120ESFT1
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 140C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 125C) Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Symbol VRRM VRWM VR IO IFRM IFSM Tstg TJ dv/dt Value 20 Unit V
1.0 2.0 40 -65 to 150 -65 to 150 10,000
A A A C C V/ms
THERMAL CHARACTERISTICS
Thermal Resistance - Junction-to-Lead (Note 1) Thermal Resistance - Junction-to-Lead (Note 2) Thermal Resistance - Junction-to-Ambient (Note 1) Thermal Resistance - Junction-to-Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). Rtjl Rtjl Rtja Rtja 26 21 325 82 C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. IR VF TJ = 25C 0.455 0.530 0.595 TJ = 25C 10 1.0 0.5 TJ = 100C 0.360 0.455 0.540 TJ = 100C 1600 500 300 mA V
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10 TJ = 150C TJ = 100C TJ = 25C TJ = -40C 1.0
10
TJ = 150C
TJ = 100C 1.0 TJ = 25C
0.1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1 0.2
0.4
0.6
0.8
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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MBR120ESFT1
IR, MAXIMUM REVERSE CURRENT (AMPS)
100E-3 IR, REVERSE CURRENT (AMPS) 10E-3 1E-3 TJ = 150C TJ = 100C
100E-3 10E-3 1E-3 TJ = 150C TJ = 100C
100E-6 10E-6 1E-6
100E-6 10E-6 1E-6 TJ = 25C
100E-9 10E-9 0 5.0
TJ = 25C
100E-9 10E-9 0 5.0 10 15 20
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
IO, AVERAGE FORWARD CURRENT (AMPS)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 45 65 85 105 Ipk/Io = 10 Ipk/Io = 20 dc
PFO, AVERAGE DISSIPATION (WATTS)
freq = 20 kHz
0.7 0.6 Ipk/Io = p 0.5 Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 SQUARE WAVE
dc
SQUARE WAVE Ipk/Io = p Ipk/Io = 5
125
145
165
1.4
1.6
TL, LEAD TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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MBR120ESFT1
1000 TJ, DERATED OPERATING TEMPERATURE (C) 155 153 C, CAPACITANCE (pF) 151 149 147 145 143 141 139 137 10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS) 135 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, DC REVERSE VOLTAGE (VOLTS) 400C/W 235C/W 324.9C/W TJ = 25C RqJA = 25.6C/W 130C/W
100
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax - r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
r(t), TRANSIENT THERMAL RESISTANCE
1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000 Test Type > Min Pad < Die Size 38x38 @ 75% mils t1 t2
10
DUTY CYCLE, D = t1/t2 qJA = 321.8 C/W
Figure 9. Thermal Response
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MBR120ESFT1
PACKAGE DIMENSIONS
SOD-123LF CASE 498-01 ISSUE O
B L E
A H C
D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. DIM A B C D E H J K L MILLIMETERS MIN MAX 1.50 1.80 2.50 2.90 0.90 1.00 0.70 1.10 0.55 0.95 0.00 0.10 0.10 0.20 3.40 3.80 0 8 INCHES MIN MAX 0.059 0.071 0.098 0.114 0.035 0.039 0.028 0.043 0.022 0.037 0.000 0.004 0.004 0.008 0.134 0.150 0 8
POLARITY INDICATOR OPTIONAL AS NEEDED
K
L
J
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MBR120ESFT1
RECOMMENDED FOOTPRINT FOR SOD-123FL
0.91 0.036
2.36 0.093 4.19 0.165
SOD-123
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EEEE EEEE EEEE EEEE EEEE
EEEE EEEE EEEE EEEE EEEE
1.22 0.048
mm inches
MBR120ESFT1
Notes
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MBR120ESFT1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MBR120ESFT1/D

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