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They are particularly suited for operation in applications such as: * Small Engine Ignition * Switching Regulators * Inverters * Solenoid and Relay Drivers * Motor Controls Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data (2) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%. NPN Silicon Power Darlington Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA SECOND BREAKDOWN OFF CHARACTERISTICS (2) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 1 Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with Base Forward Biased Emitter Cutoff Current (VEB = 8 Vdc, IC = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (IC = 50 mA, IB = 0) Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Rating Characteristic Characteristic VCEO(sus) VCEV Symbol TJ, Tstg VEB IC ICM IB IBM PD PD MJE5740 Symbol 600 300 RJC RJA TL - 65 to + 150 MJE5741 700 350 80 640 2.5 5 2 16 8 16 8 MJE5740 MJE5741 MJE5742 62.5 1.56 Max 275 MJE5742 800 400 VCEO(sus) Symbol IS/b RBSOA IEBO ICEV Watts mW/_C Watts mW/_C _C/W _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C Min 300 350 400 -- -- -- POWER DARLINGTON TRANSISTORS 8 AMPERES 300, 350, 400 VOLTS 80 WATTS Typ MJE5740 MJE5741 * MJE5742 * -- -- -- -- -- -- See Figure 7 See Figure 6 *Motorola Preferred Device CASE 221A-06 TO-220AB Order this document by MJE5740/D 100 Max 75 -- -- -- 1 5 50 (continued) mAdc mAdc Unit Vdc 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I I III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJE5740 MJE5741 MJE5742 (1) Pulse Test: Pulse Width 300 s, Duty Cycle = 2%. (2) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the (2) Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. SWITCHING CHARACTERISTICS ON CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted) Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C) Base-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc) Base-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Base-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C) Crossover Time Voltage Storage Time Inductive Load, Clamped (Table 1) Fall Time Storage Time Rise Time Delay Time Typical Resistive Load (Table 1) Diode Forward Voltage (2) (IF = 5 Adc) DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc) (IC = 4 Adc, VCE = 5 Vdc) 2 hFE , DC CURRENT GAIN 2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) 1000 100 100 POWER DERATING FACTOR (%) 20 40 80 60 10 0.1 0 0 VCE = 5 V 20 THERMAL DERATING Figure 3. DC Current Gain 60 80 100 40 120 TC, CASE TEMPERATURE (C) 2 1 IC, COLLECTOR CURRENT (AMPS) Figure 1. Power Derating (IC(pk) = 6 A, VCE(pk) = 250 Vdc IB1 = 0.06 A, VBE(off) = 5 Vdc) (VCC = 250 Vdc, IC(pk) = 6 A IB1 = IB2 = 0.25 A, tp = 25 s, Duty Cycle 1%) Characteristic SECOND BREAKDOWN DERATING + 25C 150C - 55C v TYPICAL CHARACTERISTICS 5 140 10 160 0.8 1.2 0.6 1.4 1.8 2.2 0.4 1.6 2.4 2 1 VCE IB IC VCE(sat) VBE(sat) Figure 2. Inductive Switching Measurements Symbol Motorola Bipolar Power Transistor Device Data hFE tsv tc Vf td tr ts tf 0.2 - 55C + 25C Figure 4. Base-Emitter Voltage +150C 90% IB1 hFE = 20 0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS) Min 50 200 -- -- -- -- -- -- -- -- -- -- -- -- -- tsv IC(pk) TIME 90% VCE(pk) 0.04 Typ 100 400 0.5 -- -- -- -- -- -- -- 10% VCE(pk) 2 4 2 8 trv tc 90% IC Max 2.5 2.5 3.5 2.4 2 3 2.2 tfi -- -- -- -- -- -- -- -- 10% IC(pk) 2% IC VCE(pk) tti Vdc Vdc Vdc s s s s s s -- Unit 10 MJE5740 MJE5741 MJE5742 Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING +5 V 1N4933 0.001 F PW DUTY CYCLE 10% tr, tf 10 ns 68 1k +5 V 1N4933 0.02 F NOTE: PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 CIRCUIT VALUES 270 47 100 1/2 W 1k 2N2905 MJE200 - VBE(off) VCC = 30 V VCE(pk) = 250 Vdc IC(pk) = 6 A IB T.U.T. 5.1 k 51 -4 V 33 MJE210 TEST CIRCUITS 33 1N4933 2N2222 1k RB IC Vclamp *SELECTED FOR 1 kV VCE D1 RB VCC +VCC L MR826* TUT SCOPE RC COIL DATA: FERROXCUBE CORE #6656 FULL BOBBIN (~16 TURNS) #16 GAP FOR 200 H/20 A Lcoil = 200 H OUTPUT WAVEFORMS VCC = 250 V D1 = 1N5820 OR EQUIV. +10 V TEST WAVEFORMS IC IC(pk) 25 s tf CLAMPED t t1 tf t1 ADJUSTED TO OBTAIN IC Lcoil (ICpk) t1 VCC t2 Lcoil (ICpk) Vclamp TEST EQUIPMENT SCOPE-TEKTRONICS 475 OR EQUIVALENT 0 - 9.2 V tr, tf < 10 ns DUTY CYCLE = 1% RB AND RC ADJUSTED FOR DESIRED IB AND IC VCE VCE OR Vclamp TIME t2 t VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 0.2 0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS) 10 + 25C +150C - 55C hFE = 20 Figure 5. Inductive Switching Measurements Motorola Bipolar Power Transistor Device Data 3 MJE5740 MJE5741 MJE5742 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 6 may be found at any case temperature by using the appropriate curve on Figure 1. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives the complete RBSOA characteristics. The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown. IC, COLLECTOR CURRENT (AMPS) 100 s 10 s 5 ms IC, COLLECTOR CURRENT (AMPS) 16 10 8 3 1 0.5 0.3 16 14 12 10 8 6 4 2 0 400 0 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 VBE(off) 5 V TJ = 100C MJE5742 MJE5741 MJE5740 BONDING WIRE LIMIT 1 ms dc THERMAL LIMIT (SINGLE PULSE) 0.1 SECOND BREAKDOWN LIMIT MJE5742 0.05 CURVES APPLY BELOW RATED VCEO MJE5741 MJE5740 0.02 5 100 10 20 50 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Forward Bias Safe Operating Area Figure 7. Reverse Bias Safe Operating Area RESISTIVE SWITCHING PERFORMANCE 10 1 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.2 tr 7 5 t, TIME ( s) 3 2 1 0.7 0.5 0.3 0.2 0.2 0.3 tf VCC = 250 V IB1 = IB2 IC/IB = 20 ts td VCC = 250 V IB1 = IB2 IC/IB = 20 0.3 0.5 0.7 1 2 3 5 7 10 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. Turn-On Time Figure 9. Turn-Off Time 4 Motorola Bipolar Power Transistor Device Data MJE5740 MJE5741 MJE5742 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J CASE 221A-06 TO-220AB ISSUE Y STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR Motorola Bipolar Power Transistor Device Data 5 MJE5740 MJE5741 MJE5742 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJE5740/D* MJE5740/D |
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